Volume 27; Issue 12

IEEE Electron Device Letters

Volume 27; Issue 12

1

Accurate Analytical Spiral Inductor Modeling Techniques for Efficient Design Space Exploration

Nieuwoudt, A., McCorquodale, M.S., Borno, R.T., Massoud, Y.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 312 KB

english, 2006

2

InGaP/InGaAs Pseudomorphic Heterodoped-Channel FETs With a Field Plate and a Reduced Gate Length by Splitting Gate Metal

Chen, H.R., Hsu, M.K., Chiu, S.Y., Chen, W.T., Chen, G.H., Chang, Y.C., Lour, W.S.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 219 KB

english, 2006

3

Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures

Marso, M., Fox, A., Heidelberger, G., Kordos, P., Luth, H.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 154 KB

english, 2006

4

On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-<formula formulatype="inline"><tex>$k$</tex></formula> Dielectrics

H. Wen, H. Rusty Harris, C. D. Young, H. Luan, H. N. Alshareef, K. Choi, D. Kwong, P. Majhi, G. Bersuker, B. H. Lee

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 400 KB

english, 2006

5

A Novel Self-Aligned Etch-Stopper Structure With Lower Photo Leakage for AMLCD and Sensor Applications

C. Liang, F. Gan, P. Liu, F. S. Yeh, S. H. Chen, T. Chang

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 291 KB

english, 2006

6

Enhancement-Mode GaAs n-Channel MOSFET

K. Rajagopalan, J. Abrokwah, R. Droopad, M. Passlack

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 172 KB

english, 2006

7

I-MOS Transistor With an Elevated Silicon&ndash;Germanium Impact-Ionization Region for Bandgap Engineering

E. Toh, G. H. Wang, L. Chan, G. Lo, G. Samudra, Y. Yeo

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 239 KB

english, 2006

8

Effect of Silicon Thickness on Contact-Etch-Stop-Layer-Induced Silicon/Buried-Oxide Interface Stress for Partially Depleted SOI

C. Lin, Y. Fang, W. Yeh, T. Lee, M. Chen, C. Hsu, L. Chen, L. Cheng, M. Ma

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 297 KB

english, 2006

9

The Effect of Single-Halo Doping on the Low-Frequency Noise Performance of Deep Submicrometer MOSFETs

K. Narasimhulu, I. V. Setty, V. R. Rao

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 171 KB

english, 2006

10

Plasma-Induced Damage in High-<formula formulatype="inline"><tex>$k$</tex></formula>/Metal Gate Stack Dry Etch

M. M. Hussain, S. Song, J. Barnett, C. Y. Kang, G. Gebara, B. Sassman, N. Moumen

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 256 KB

english, 2006

11

Scaling of Bulk pMOSFETs: (110) Surface Orientation Versus Uniaxial Compressive Stress

F. M. Bufler, A. Tsibizov, A. Erlebach

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 127 KB

english, 2006

12

CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS:$\hbox{Ni}_{2}\hbox{Si}$, and $\hbox{Ni}_{31}\hbox{Si}_{12}$) on HfSiON

Kittl, J. A., Lauwers, A., Veloso, A., Hoffmann, T., Kubicek, S., Niwa, M., van Dal, M. J. H., Pawlak, M. A., Brus, S., Demeurisse, C., Vrancken, C., Absil, P., Biesemans, S.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 193 KB

english, 2006

13

Performance Gain Through Dynamic Control of Device Geometry: Nanoelectromechanical Carbon Nanotube-Based Switch

Engstrom, K. E., Kinaret, J. M.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 197 KB

english, 2006

14

Analysis of Poly-Si TFT Degradation Under Gate Pulse Stress Using the Slicing Model

Tai, Ya-Hsiang, Huang, Shih-Che, Chen, Chien-Kwen

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 344 KB

english, 2006

15

Millisecond Anneal and Short-Channel Effect Control in Si CMOS Transistor Performance

Nieh, C. F., Ku, K. C., Chen, C. H., Chang, H., Wang, L. T., Huang, L. P., Sheu, Y. M., Wang, C. C., Lee, T. L., Chen, S. C., Liang, M. S., Gong, J.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 106 KB

english, 2006

16

A Novel $\hbox{Pt/In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$ Schottky Diode-Type Hydrogen Sensor

Hung, Ching-Wen, Lin, Han-Lien, Chen, Huey-Ing, Tsai, Yan-Ying, Lai, Po-Hsien, Fu, Ssu-I, Liu, Wen-Chau

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 229 KB

english, 2006