Volume 5; Issue 4

IEEE Electron Device Letters

Volume 5; Issue 4
1

Proposed vertical-type amorphous-silicon field-effect transistors

Uchida, Y., Nara, Y., Matsumura, M.
Journal:
IEEE Electron Device Letters
Year:
1984
Language:
english
File:
PDF, 243 KB
english, 1984
2

Static random access memory using high electron mobility transistors

S. Lee, C. Lee, D. Hou, R. Anderson, D. Miller
Journal:
IEEE Electron Device Letters
Year:
1984
Language:
english
File:
PDF, 494 KB
english, 1984
3

An n-channel MOSFET with Schottky source and drain

Mochizuki, T., Wise, K.D.
Journal:
IEEE Electron Device Letters
Year:
1984
Language:
english
File:
PDF, 388 KB
english, 1984
4

Self-aligned InP p-n junction diodes fabricated with ³He+bombardment

Capasso, F., Schwartz, B., Logan, R.A.
Journal:
IEEE Electron Device Letters
Year:
1984
Language:
english
File:
PDF, 299 KB
english, 1984
5

Ion implantation of Boron in GaAs MESFET's

McNally, P.J.
Journal:
IEEE Electron Device Letters
Year:
1984
Language:
english
File:
PDF, 447 KB
english, 1984
6

A flip-chip GaAs power FET with gate and drain via connections

Camisa, R.L., Taylor, G., Reichert, W., Cuomo, F., Brown, R.
Journal:
IEEE Electron Device Letters
Year:
1984
Language:
english
File:
PDF, 313 KB
english, 1984
8

Self-aligned modulation-doped (Al,Ga)As/GaAs field-effect transistors

Cirillo, N.C., Abrokwah, J.K., Shur, M.S.
Journal:
IEEE Electron Device Letters
Year:
1984
Language:
english
File:
PDF, 299 KB
english, 1984
9

Bias dependence of capacitances in modulation-doped FET's at 4 GHz

Arnold, D., Kopp, W., Fischer, R., Klem, J., Morkoc, H.
Journal:
IEEE Electron Device Letters
Year:
1984
Language:
english
File:
PDF, 273 KB
english, 1984