Volume 12; Issue 9

IEEE Transactions on Electron Devices

Volume 12; Issue 9

1

A resonant gate surface transistor with high-q bandpass properties

Nathanson, H.C., Wickstrom, R.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 182 KB

english, 1965

2

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 141 KB

english, 1965

3

Noise in cathodoluminescence light

Chen, T.M., van der Ziel, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 497 KB

english, 1965

4

Effect of antireflection coatings and coverglasses on silicon solar cell performance

Ralph, E.L., Wolf, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 491 KB

english, 1965

5

Silicon mosaic for integrated devices

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 924 KB

english, 1965

6

Noise figure of UHF transistors

Thommen, W., Strutt, M.J.O.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 225 KB

english, 1965

7

Avalanche transit time microwave oscillators and amplifiers

De Loach, B.C., Johnston, R.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 172 KB

english, 1965

8

Microwave oscillations from avalanche diodes

Gilden, M., Hines, M.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 172 KB

english, 1965

9

GaAs avalanche microwave oscillators

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 172 KB

english, 1965

10

A negative resistance in junctions due to avalanche multiplication

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 172 KB

english, 1965

11

Microwave oscillations in GaAsxP1-xalloys

Allen, J.W., Shyam, M., Chen, Y.S., Pearson, G.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 178 KB

english, 1965

12

Theory of hot electron transfer in gallium arsenide

Butcher, P.N., Fawcett, W., Hilsum, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 178 KB

english, 1965

13

High-field electron distribution in GaAs

Conwell, E.M., Vassell, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 178 KB

english, 1965

14

High electric field and pressure effects in n-CdTe, n-InAs, and N-InSb

Foyt, A.G., McWhorter, A.L., Paul, W.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 178 KB

english, 1965

15

Calculation of shock-wave properties

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 178 KB

english, 1965

16

Active modes of interaction in bulk GaAs

Hakki, B.W., Knight, S., Uenohara, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 178 KB

english, 1965

17

Contacting of n-type high resistivity GaAs for CW bulk oscillators

Knight, S., Hakki, B.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 178 KB

english, 1965

18

Nucleation and propagation of accumulation and depletion layers in the Gunn effect

Kroemer, H., Day, G.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 178 KB

english, 1965

19

Migration rates of alkali ions in thermally-grown SiO2films

Logan, J.S., Kerr, D.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 178 KB

english, 1965

20

An avalanching silicon diode microwave amplifier

Napoli, L.S., Ikola, R.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 178 KB

english, 1965

21

Ion migration and space-charge polarization in glass films

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 353 KB

english, 1965

22

Microwave amplification in a bulk semiconductor

Thim, H.W., Barber, M.R., Hakki, B.W., Knight, S., Uenohara, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 178 KB

english, 1965

23

Photoemission of electrons from silicon into silicon dioxide

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 178 KB

english, 1965

24

The propagation of negative resistance space-charge waves

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 178 KB

english, 1965

25

A model for the charge motion and instability in the metal-silicon oxide-silicon structure

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 191 KB

english, 1965

26

Transient effects in M-O-S structures induced by changes of temperature and of the ambient atmosphere

Lehovec, K., Ho, P., Fedotowsky, L.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 191 KB

english, 1965

27

The influence of oxidation and high temperature treatment on MOS device characteristics

Revesz, A.G., Zaininger, K.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 363 KB

english, 1965

28

Uniformly multiplying junctions in the read diode and other structures

Batdorf, R.L., Lee, C.A., Wiegmann, W., Kaminsky, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 189 KB

english, 1965

29

Analysis of a microwave amplifier utilizing an electro-optic junction modulator

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 362 KB

english, 1965

30

Magneto-optical devices using ferrimagnetic garnets

Dillon, J.F., Jr., LeCraw, R.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 189 KB

english, 1965

31

Anomalous rectification in the read diode structure under forced excitation

Lee, C.A., Batdorf, R.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 189 KB

english, 1965

32

Avalanche multiplication noise in semiconductor junctions

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 189 KB

english, 1965

33

Light modulation by the electro-optic effect in reverse biased gallium phosphide P-N junctions

Nelson, D.F., Reinhart, F.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 189 KB

english, 1965

34

High frequency electro-optic gallium phosphide diodes

Reinhart, F.K., Nelson, D.F., Dickten, E., Foy, P.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 189 KB

english, 1965

35

Surface state and surface recombination velocity characteristics of Si-SiO2interfaces

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 189 KB

english, 1965

36

Experimental evidences of the interdependences of the fixed charges, the chargeable surface states and the bulk impurity recombination states in the silicon-oxide silicon structures

Sah, C.T., Collins, D.R., Pao, H.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 189 KB

english, 1965

37

Efficient injection electroluminescence in ZnSexTe1-xp-n homojunctions

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 190 KB

english, 1965

38

Pressure tuned lead salt laser

Besson, J.M., Paul, W., Butler, J.F., Calawa, A.R., Rediker, R.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 190 KB

english, 1965

39

Degradation of quantum efficiency in GaAs light emitters

Biard, J.R., Pittman, G.E., Leezer, J.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 190 KB

english, 1965

40

High-speed current limiters

Boll, H.J., Iwersen, J.E., Perry, E.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 353 KB

english, 1965

41

Turn-on delay in gallium arsenide lasers operated at room temperature

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 190 KB

english, 1965

42

Negative resistance behavior in double injection structures

Marsh, O.J., Baron, R., Mayer, J.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 190 KB

english, 1965

43

Transients and hot carrier effects in InSb bulk injection lasers

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 190 KB

english, 1965

44

Properties of optically pumped semiconductor lasers

Phelan, R.J., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 190 KB

english, 1965

45

A model for sublinear photocurrents in sensitized CdS and other photoconductors

Warter, P.J., Jr., Tabak, M.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 190 KB

english, 1965

46

Surface wave instability in Helicon wave propagation

Baraff, G.A., Buchsbaum, S.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 182 KB

english, 1965

47

Transverse wave propagation and instabilities in a current carrying electron-hole plasma

Bartelink, D.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 182 KB

english, 1965

48

Helicon instabilities in drifted plasmas

Bers, A., McWhorter, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 182 KB

english, 1965

49

Microwave emission from indium antimonide

Chynoweth, A.G., Buchsbaum, S.J., Feldman, W.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 182 KB

english, 1965

50

Effect of Ga diffusion through SIO2on Si MOS transistors

Fang, F.F., Yu, H.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 369 KB

english, 1965

51

Properties of X-band emission from InSb

Ferry, D.K., Young, R.W., Dougal, A.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 182 KB

english, 1965

52

Electron-phonon instabilities in a magnetic field

Musha, T., Bers, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 182 KB

english, 1965

53

Surface induced two-stream instabilities in longitudinal magnetic fields

Steele, M.C., Vural, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 182 KB

english, 1965

54

Streaming instabilities in solids and the role of collisions

Vural, B., Bloom, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 182 KB

english, 1965

55

Surface effects on silicon P-N junctions: The origin of anomalous channel currents

Grove, A.S., Fitzgerald, D.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 378 KB

english, 1965

56

Ferroelectric field effect device

Heilmeier, G.H., Heyman, P.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 206 KB

english, 1965

57

Measurement of fast surface state parameters by the A-C MOS conductance method

Nicollian, E.H., Goetzberger, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 206 KB

english, 1965

58

Tunable high-pass filter characteristics of a special MOS transistor

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 206 KB

english, 1965

59

Theory of current transport in hot-electron transistors

Crowell, C.R., Sze, S.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 188 KB

english, 1965

60

The nature of metal-semiconductor barriers

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 188 KB

english, 1965

61

A CdS-Si heterojunction transistor

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 351 KB

english, 1965

62

Effect of diffusion current on the device characteristics of insulated-gate field-effect transistors

Pao, H.C., Sah, C.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 188 KB

english, 1965

63

Effect of the bulk charge on the thermal noise in metal-oxide-silicon field-effect transistors

Sah, C.T., Hielscher, F.H., Wu, S.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 188 KB

english, 1965

64

Influence of nonequilibrium carriers on the surface breakdown of N + P diodes and MOS-structures

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 188 KB

english, 1965

65

Experimental study of hot-electron transport in semiconductor-metal-semiconductor structures

Sze, S.M., Crowell, C.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 188 KB

english, 1965

66

On the photocurrent spectra at the Ge absorption edge in Ge-GaAs and Ge-Si heterojunctions

Anderson, R.L., Rock, J.C., Yawata, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 299 KB

english, 1965

67

GaAsxP1-x—GaAs pin heterojunction photodetectors

Ramachandran, T.B., Moroney, W.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 177 KB

english, 1965

68

Electrical and electro-optical properties of GaAs-InSb "Schottky-barrier" heterojunctions

Hinkley, E.D., Rediker, R.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 136 KB

english, 1965

69

Electrical characteristics of Ge-GaAs and Ge-Si p-n heterojunctions

Riben, A.R., Donnelly, J.P., Feucht, D.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 136 KB

english, 1965

70

[Back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

1965

Language:

english

File:

PDF, 1.75 MB

english, 1965