Volume 13; Issue 6

IEEE Transactions on Electron Devices

Volume 13; Issue 6

1

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 164 KB

english, 1966

2

Impact ionization devices

Ghandhi, S.K., Mortenson, K.E., Park, J.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 480 KB

english, 1966

3

Analysis of high-frequency thermal noise of enhancement mode MOS field-effect transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 468 KB

english, 1966

4

A two electron gun technique for the measurement of secondary emission characteristics of a variety of materials

Handel, K.J., Jensen, A.S., Siedband, M.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 512 KB

english, 1966

5

Time delay in triggered vacuum gap

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 182 KB

english, 1966

6

Dc characteristics of junction gate field-effect transistors

Halladay, H.E., van der Ziel, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 193 KB

english, 1966

7

On "Nonlinear distortions and their cancellation in transistors"

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 207 KB

english, 1966

8

[Back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 494 KB

english, 1966