Volume 25; Issue 11

IEEE Transactions on Electron Devices

Volume 25; Issue 11

1

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 171 KB

english, 1978

2

Electrical and charge storage characteristics of the tantalum oxide-silicon dioxide device

Angle, R.L., Talley, H.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 831 KB

english, 1978

3

A quasi-one-dimensional analysis of small-signal current gains in lateral transistors

Ram, G.V., Tyagi, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 800 KB

english, 1978

4

Solar-cell operation under concentrated illumination

Spaderna, D.W., Navon, D.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 841 KB

english, 1978

5

Low-loss p-i-n diode for high-power MIC phase shifter

Swartz, G.A., Rosen, A., Ho, P.T., Schwarzmann, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 693 KB

english, 1978

6

Mo gate tetrode

Brown, D.M., Connery, R.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 1.21 MB

english, 1978

7

MIS solar cells: A review

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 1.14 MB

english, 1978

8

C-V profiling of GaAs FET films

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 762 KB

english, 1978

9

Tradeoff between threshold voltage and breakdown in high-voltage double-diffused MOS transistors

Pocha, M.D., Plummer, J.D., Meindl, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 401 KB

english, 1978

10

Corner currents in p+-n-n+diodes with n+isolation diffusions

Roulston, D.J., Elsaid, M.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 250 KB

english, 1978

11

The influence of nitride thickness variations on the switching speed of MNOS memory transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 459 KB

english, 1978

12

Influence of surface states on the measurement of field-effect mobility

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 226 KB

english, 1978

13

Investigation of light enhancement of diffusion length by DC photovoltaic current measurement

Ho, C.T., Mathias, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 347 KB

english, 1978

14

Correction to "An analysis of wide-band transferred electron devices"

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 120 KB

english, 1978

15

Correction to "GaAs microwave MOSFET's"

Mimura, T., Odani, K., Yokoyama, N., Nakayama, Y., Fukuta, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 120 KB

english, 1978

16

MA-4 the prospects for ultra-high speed VLSI GaAs digital logic

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 326 KB

english, 1978

17

MA-2 current problems in heterojunction devices and their physics

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 170 KB

english, 1978

18

MA-1 an overview of VLSI

Lepselter, M.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 170 KB

english, 1978

19

MA-3 E-beam exposure for semiconductor device lithography

Weber, E.V., Moore, R.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 170 KB

english, 1978

20

MP-A4 Nonuniformly doped JFET's for use in GaAs MESFET circuits: Simulation

Anderson, G.F., Current, K.W., Forbes, L.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 310 KB

english, 1978

21

MP-A3 switching speed limits of GaAs devices for integrated circuits

Eastman, L.F., Shur, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 170 KB

english, 1978

22

MP-A2 Low-power GaAs digital integrated circuits with normally-off MESFET's

Fukuta, M., Suyama, K., Kusakawa, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 170 KB

english, 1978

23

MP-A1 Electron-beam fabricated GaAs FET inverter

Greiling, P.T., Krumm, C.F., Ozdemir, F.S., Hackett, L.H., Lohr, R.F., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 170 KB

english, 1978

24

MP-A6 Josephson current injection logic (CIL)

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 159 KB

english, 1978

25

MP-A7 microwave InxGa1-xAsyP1-y/Inp MESFET

Morkoc, H., Andrews, J., Houng, Y., Antypas, G., Sankaran, R., Bandy, S., Bell, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 159 KB

english, 1978

26

MP-A8 Ge/GaAs heterojunction IMPATT's

Namordi, M.R., Shaw, D.W., Doerbeck, F.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 317 KB

english, 1978

27

MP-A5 Hot-carrier phenomena and their effects on performance of submicrometer devices

Wada, T., Frey, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 159 KB

english, 1978

28

MP-B2 room-temperature operation of distributed-bragg-confinement Ga1-xAlxAs-GaAs lasers grown by metal-organic chemical vapor deposition

Dupuis, R.D., Dapkus, P.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 314 KB

english, 1978

29

MP-B1 photopumped MO-CVD quantum-well AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure lasers (x = 0.4-0.6, Lz≥ 200 Å, T = 4.2-300 K)

Holonyak, N., Jr., Kolbas, R.M., Dupuis, R.D., Dapkus, P.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 175 KB

english, 1978

30

MP-B5 facet passivation of (AlGa)As DH lasers by carbon ion-beam deposition

Furuse, T., Suzuki, T., Matsumoto, S., Nishida, K., Nannichi, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 157 KB

english, 1978

31

MP-B4 room-temperature operation of lattice-matched InP/Ga0.47In0.53As/InP double heterostructure lasers grown by MBE

Miller, B.I., McFee, J.H., Martin, R.J., Tien, P.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 157 KB

english, 1978

32

MP-B3 beam scanning and wavelength modulation of injection lasers by means of optical phase delays

Scifres, D.R., Burnham, R.D., Streifer, W.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 157 KB

english, 1978

33

MP-B6 the reliability of Ga1-xAlxAs laser hybrid devices

Thompson, A., Williamson, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 312 KB

english, 1978

34

MP-B7 Performance optimization of GaAlAs DH LED's with a 50-µm thick window layer

Abe, M., Hasegawa, O., Komatsu, Y., Toyama, Y., Yamaoka, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 171 KB

english, 1978

35

TA-A2 device modeling for circuit simulation programs

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 324 KB

english, 1978

36

TA-A1 VLSI limitations from drain-induced barrier-lowering

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 171 KB

english, 1978

37

TA-A3 a simple narrow-channel MOSFET model

Kamiya, M., Scharfetter, D.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 165 KB

english, 1978

38

TA-A5 CMOS/SOS transistors with submicrometer gate lengths

Mayer, D.C., Yuan, J.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 165 KB

english, 1978

39

TA-A4 a simple analytical short-channel MOS model including the velocity saturation effect on the capacitance and channel current

Sun, E., Moll, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 165 KB

english, 1978

40

TA-A6 threshold and subthreshold characteristics of VMOS FET via a two-dimensional finite element model

Cottrell, P.E., Buturla, E.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 162 KB

english, 1978

41

TA-B2 GaAlSb and GaAlAsSb high-speed avalanche photodiode

Law, H.D., Tomasetta, L.R., Nakano, K., Harris, J.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 315 KB

english, 1978

42

TA-A7 A charge-oriented model for MOS transistor capacitances

Ward, D.E., Dutton, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 162 KB

english, 1978

43

TA-B1 tunable-bandgap InGaAsP avalanche photodiode detectors

Washington, M.A., Nahory, R.E., Pollack, M.A., Beebe, E.D., Capasso, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 162 KB

english, 1978

44

TA-B3 infrared imagers using InAsSb hybrid arrays

Blackwell, J.D., Rode, J.P., Andrews, A.M., Williams, G.M., Tennant, W.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 165 KB

english, 1978

45

TA-B4 the temperature dependence of impact ionization rates in GaAs between 20° and 250°C

Capasso, F., Nahory, R.E., Pollack, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 165 KB

english, 1978

46

TA-B6 photoemission to 1.7 µm from an InP/InGaAs transferred-electron photocathode

Escher, J.S., Maloney, T.J., Gregory, P.E., Hyder, S.B., Houng, Y.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 326 KB

english, 1978

47

TA-B5 Si-MOSFET as a voltage tunable far-infrared source

Gornik, E., Tsui, D.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 165 KB

english, 1978

48

TP-A2 electronic properties of a characteristic discrete level at the Si-SiO2interface

Johnson, N.M., Bartelink, D.J., McVittie, J.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 322 KB

english, 1978

49

TA-B7 diffused homojunction PbSSe diodes with 140 K laser operation

Lo, W., Swets, D.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 176 KB

english, 1978

50

TP-A1 shallow-level electron traps in SiO2

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 176 KB

english, 1978

51

TP-A3 the effects of charge injection on avalanche injected oxide current

Amantea, R., Muller, R.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 163 KB

english, 1978

52

TP-A4 concerning the device physics of dual-dielectric charge-storage cells: Some surprises

Thornber, K.K., Kahng, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 163 KB

english, 1978

53

TP-A7 experiments on graded Nitride MNOS

Hsia, Y., Lee, W.W.Y., Chen, Y.J., Ngai, K.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 166 KB

english, 1978

54

TP-B1 fabrication and design of low-noise InSb thin-film Hall elements for Hall effect magnetic heads

Kotera, N., Oi, T., Narita, K., Shigeta, J., Sato, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 298 KB

english, 1978

55

TP-A6 chemical-vapor-deposited silicon nitride: Effects of the NH3/SiH4ratio on MNOS memory

Stein, H.J., Wells, V.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 164 KB

english, 1978

56

TP-A5 investigation of charge transport in MNOS memory structures

White, M.H., Schroder, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 164 KB

english, 1978

57

TP-B4 analog ROM and related devices using ferroelectric ferroelastics

Coldren, L.A., Geary, J.M., Lemons, R.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 294 KB

english, 1978

58

TP-B2 material and device constraints in piezoelectric FET strain transducers

Kwan, S.H., Muller, R.S., White, R.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 150 KB

english, 1978

59

TP-B3 an integrated humidity sensor based on the charge-flow transistor

Senturia, S.D., Huberman, M., Van der Kloot, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 150 KB

english, 1978

60

TP-B6 a possible model for thin-film AC electroluminescent devices

Cape, J.A., Ketchpel, R.D., Hale, L.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 158 KB

english, 1978

61

WA-A1 a channel-collector transistor

Grung, B.L., Zipperian, T.E., Warner, R.M., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 158 KB

english, 1978

62

WA-A2 stratified-channel charge-coupled devices

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 305 KB

english, 1978

63

TP-B5 beam-induced switching phenomena in ZnS:Mn EL memory devices

Sahni, O., Howard, W.E., Alt, P.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 158 KB

english, 1978

64

WA-A3 transient subthreshold conduction over small potential barriers in dynamic MOS structures

Chatterjee, P.K., Taylor, G.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 162 KB

english, 1978

65

WA-A5 separation of the basic mechanisms in optically illuminated metal-semiconductor contacts

Panayotatos, P., Card, H.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 294 KB

english, 1978

66

WA-A4 a device model for an ion-implanted buried channel MOSFET and buried-channel CCD

Taylor, G.W., Chatterjee, P.K., Chao, H.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 162 KB

english, 1978

67

WA-A6 Determination of intrinsic noise contributions in surface-channel CCD's

Chik, K.D., Devenyi, T.F., Kriegler, R.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 148 KB

english, 1978

68

WA-B1 AlgaAs/GaAs solar cells for concentrator applications

Sahai, R., Edwall, D.D., Harris, J.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 281 KB

english, 1978

69

WA-A7 correlation between capacitance deep level measurements and low-frequency noise in InP Schottky diodes

White, A.M., Grant, A.J., Day, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 148 KB

english, 1978

70

WA-B3 polymer-semiconductor solar cells

Cohen, M.J., Harris, J.S., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 152 KB

english, 1978

71

WA-B2 improved high-energy response of Ga1-xAlxAs-GaAs solar cells using fluorescent capping layers

Hovel, H., Hodgson, R.T., Woodall, J.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 152 KB

english, 1978

72

WA-B4 avalanching optoelectronic microwave gate

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 310 KB

english, 1978

73

WA-B7 Planar GaInSb CCD's

Cheung, D.T., Barrowcliff, E.E., Bubulac, L.O., Gertner, E.R., Andrews, A.M., Ludowise, M.J., Tennant, W.E., Wood, L.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 175 KB

english, 1978

74

WA-B6 GaAs Schottky-barrier gate CCD

Deyhimy, I., Harris, J.S., Edwall, D.D., Eden, R.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 175 KB

english, 1978

75

WA-B5 nonalloyed and "In situ" ohmic contacts to highly doped n-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors

DiLorenzo, J.V., Niehaus, W.C., Cho, A.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 175 KB

english, 1978

76

WP-A2 the use of a scanned continuous laser beam for annealing of ion implantation damage in silicon

Gat, A., Gibbons, J.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 153 KB

english, 1978

77

WP-A1 monolithic polycrystalline silicon distributed RC devices

Gerzberg, L., Meindl, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 153 KB

english, 1978

78

WP-A3 ambient effects on annealing of phosphorus implanted emitters

Tseng, W.F., Koji, T., Mayer, J.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 303 KB

english, 1978

79

WP-A5 Boron diffusivity in and silicon under oxidation conditions—A study of oxidation-enhanced diffusivity

Antoniadis, D.A., Lin, A., Gonzalez, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 168 KB

english, 1978

80

WP-A6 thermal oxidation of heavily doped silicon: Physical modeling and device applications

Ho, C.P., Plummer, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 311 KB

english, 1978

81

WP-A4 a model for dopant incorporation into silicon epitaxial films

Reif, R., Saraswat, K.C., Kamins, T.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 168 KB

english, 1978

82

WP-B2 catastropic damage of AlxGa1-xAs double heterostructure laser material

Henry, C.H., Petroff, P.M., Logan, R.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 309 KB

english, 1978

83

WP-B1 optical absorption and saturation of the deep Te-complex center in AlxGa1-xAs

Merz, J.L., van der Ziel, J.P., Logan, R.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 158 KB

english, 1978

84

WP-A7 some physical properties of dry high-pressure oxide films on silicon

Zeto, R.J., Irene, E.A., Dong, D.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 158 KB

english, 1978

85

WP-B3 athermal annealing of a native defect in high-quality GaP LEC crystals

Mizuta, M., Yoshino, J., Kukimoto, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 165 KB

english, 1978

86

WP-B4 impurity gradients and interfacial regions in epitaxial GaAs

Nichols, K.H., Wolfe, C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 165 KB

english, 1978

87

WP-B5 the mechanism of Schottky-barrier pinning on III-V semiconductors

Spicer, W.E., Lindau, I., Chye, P., Su, C.-Y., Pianetta, P., Garner, C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 252 KB

english, 1978

88

WP-B6 investigation of heterojunctions for MIS devices with insulating AlxGa1-xAs on n-type GaAs

Casey, H.C., Jr., Cho, A.Y., Lang, D.V., Nicollian, E.H., Foy, P.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 101 KB

english, 1978

89

WP-B7 on the behavior of buried oxygen implanted layers in highly doped GaAs

Grote, N., Krautle, H., Beneking, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 101 KB

english, 1978

90

[Back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

1978

Language:

english

File:

PDF, 953 KB

english, 1978