Volume 27; Issue 12

IEEE Transactions on Electron Devices

Volume 27; Issue 12

1

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 244 KB

english, 1980

2

Foreword

Buehler, M.G., Bullis, W.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 341 KB

english, 1980

3

"Electrical microscopy" of test parameter inhomogeneities resulting from microdefects in processed silicon wafers

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 1.44 MB

english, 1980

4

High-resolution optical methods for characterization of polycrystalline GaAs thin films

Wagner, D.K., Fletcher, R.M., Ballantyne, J.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 496 KB

english, 1980

5

Current transient spectroscopy: A high-sensitivity DLTS system

Borsuk, J.A., Swanson, R.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 918 KB

english, 1980

6

A computer-controlled deep-level transient spectroscopy system for semiconductor process control

Jack, M.D., Pack, R.C., Henriksen, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 618 KB

english, 1980

7

MOS interface-state density measurements using transient capacitance spectroscopy

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 910 KB

english, 1980

8

Automated steady-state admittance spectroscopy for surface studies with application to solar cells

Smith, P., Genis, A.P., Singh, R., DuBow, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 502 KB

english, 1980

9

An analytical expression for the evaluation of leakage current in the integrated gated-diode electrometer

Carver, G.P., Buehler, M.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 849 KB

english, 1980

10

A dual-gate deep-depletion technique for generation lifetime measurement

Barth, P.W., Angell, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 419 KB

english, 1980

11

IMMA applications to ion implantation in silicon-on-sapphire

Pancholy, R.K., Young, M.Y.-T.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 1.11 MB

english, 1980

12

Correction of differential capacitance profiles for Debye-length effects

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 646 KB

english, 1980

13

On-line capacitance—Voltage doping profile measurement of low-dose ion implants

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 503 KB

english, 1980

14

Effect of the drain—Source voltage on dopant profiles obtained from the DC MOSFET profile method

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 520 KB

english, 1980

15

Magnetoresistance mobility profiling of MESFET channels

Sites, J.R., Wieder, H.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 490 KB

english, 1980

16

Evaluation of n-GaAs polycrystalline layers for solar cells using an electrochemical technique

Weiner, A.S., Reep, D.H., Shastry, S.K., Bhat, K.N., Borrego, J.M., Ghandhi, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 496 KB

english, 1980

17

A diagnostic pattern for GaAs FET material development and process monitoring

Immorlica, A.A., Jr., Decker, D.R., Hill, W.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 690 KB

english, 1980

18

Process evaluation test structures and measurement techniques for a planar GaAs digital IC technology

Zucca, R., Welch, B.M., Chien-Ping Lee, Eden, R.C., Long, S.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 1.06 MB

english, 1980

19

Applications of high-speed data acquisition for bipolar device-yield analysis

Charles, J.M., Lantz, M.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 691 KB

english, 1980

20

Automated electrical measurements of registration errors in step-and-repeat optical lithography systems

Hasan, T.F., Katzman, S.U., Perloff, D.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 896 KB

english, 1980

21

Diagnosis of a cause of life test failure in alloy diodes

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 1.19 MB

english, 1980

22

[Back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 6.32 MB

english, 1980