Volume 29; Issue 12

IEEE Transactions on Electron Devices

Volume 29; Issue 12

1

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 190 KB

english, 1982

2

A new method to electrically determine effective MOSFET channel width

Ying-Ren Ma, Wang, K.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 280 KB

english, 1982

3

Improving resolution in photolithography with a phase-shifting mask

Levenson, M.D., Viswanathan, N.S., Simpson, R.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 1.43 MB

english, 1982

4

Noise in short n+-n--n+GaAs diodes

Peczalski, A., van der Ziel, A., Hollis, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 219 KB

english, 1982

5

On the mechanism of carrier transport in metal-thin-oxide semiconductor diodes on Polycrystalline silicon

Kar, S., Panchal, K.M., Bhattacharya, S., Varma, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 654 KB

english, 1982

6

Theory of traveling-wave transistors

Podgorski, A.S., Wei, L.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 730 KB

english, 1982

7

Reduction of threshold voltage for bistable liquid-crystal switching using a priming voltage

Cheng, J., Boyd, G.D., Westerwick, E.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 408 KB

english, 1982

8

Blooming characteristics of a solid-state imager overlaid with a photoconductor

Chikamura, T., Miyata, Y., Ohta, Y., Fujiwara, S., Fukai, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 593 KB

english, 1982

9

The role of the interfacial layer in polysilicon emitter bipolar transistors

Eltoukhy, A.A., Roulston, D.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 733 KB

english, 1982

10

A simple model for the overlap capacitance of a VLSI MOS device

Shrivastava, R., Fitzpatrick, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 576 KB

english, 1982

11

Modeling of charge transfer by surface acoustic waves in a monolithic metal/ZnO/SiO2/Si system

Augustine, F.L., Schwartz, R.J., Gunshor, R.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 771 KB

english, 1982

12

Power reduction in liquid-crystal display modules

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 229 KB

english, 1982

13

The importance of the excitation volume in determination of surface recombination velocity

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 1.19 MB

english, 1982

14

An extended operation of three-phase SCCD's by controlled free-charge transfer

Narayanan, L.S., Bhattacharyya, A.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 414 KB

english, 1982

15

A monolithic lead sulfide-silicon MOS integrated-circuit structure

Jhabvala, M.D., Barrett, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 891 KB

english, 1982

16

Investigation of transient electronic transport in GaAs following high energy injection

Tang, J.Y.-F., Hess, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 514 KB

english, 1982

17

A high power gyrotron operating in the TE041mode

Arfin, B., Kwo Ray Chu, Dialetis, D., Read, M.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 483 KB

english, 1982

18

Loaded Q's and field profiles of tapered axisymmetric gyrotron cavities

Derfler, H., Grant, T.J., Stone, D.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 1001 KB

english, 1982

19

Experimental results on junction charge-coupled devices

Wolsheimer, E.A., Kleefstra, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 830 KB

english, 1982

20

Ion-sensitive field-effect transistors with inorganic gate oxide for pH sensing

Akiyama, T., Ujihira, Y., Okabe, Y., Sugano, T., Niki, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 536 KB

english, 1982

21

Direct comparison of the electron-temperature model with the particle-mesh (Monte-Carlo) model for the GaAs MESFET

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 212 KB

english, 1982

22

A new scaling length for modeling semiconductor space-charge regions

Jindal, R.P., Warner, R.M., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 209 KB

english, 1982

23

Comment on "Distributed series resistance effects in solar cells"

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 61 KB

english, 1982

24

[Back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 4.98 MB

english, 1982