Volume 31; Issue 1

IEEE Transactions on Electron Devices

Volume 31; Issue 1

1

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 225 KB

english, 1984

2

Reciprocity behavior of photoresists in excimer laser lithography

Rice, S., Jain, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 284 KB

english, 1984

3

Measurements of the p-n product in heavily doped epitaxial emitters

Possin, G.E., Adler, M.S., Baliga, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 1.56 MB

english, 1984

4

A JMOS transistor fabricated with 100-Å low-pressure nitrided-oxide gate dielectric

Sodini, C.G., Wong, S.S., Ekstedt, T.W., Grinolds, H.R., Oldham, W.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 519 KB

english, 1984

5

Effects of transient carrier transport in millimeter-wave GaAs diodes

Grondin, R.O., Blakey, P.A., East, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 838 KB

english, 1984

6

Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterization

Kwyro Lee, Shur, M.S., Drummond, T.J., Morkoc, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 658 KB

english, 1984

7

Bipolar-mode Schottky contact and applications to high-speed diodes

Amemiya, Y., Mizushima, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 940 KB

english, 1984

8

Temperature dependence of FET properties for Cr-doped and LEC semi-insulating GaAs substrates

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 1019 KB

english, 1984

9

A better understanding of CMOS latch-up

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 734 KB

english, 1984

10

MOSFET's fabricated in laser-recrystallized Silicon on Quartz using selectively absorbing dielectrical layers

Possin, G.E., Parks, H.G., Shin-Wu Chiang, Liu, Y.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 1.07 MB

english, 1984

11

The optimization of on-resistance in vertical DMOS power devices with linear and hexagonal surface geometries

Board, K., Byrne, D.J., Towers, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 597 KB

english, 1984

12

Saturation currents in small-geometry bipolar transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 304 KB

english, 1984

13

Interline CCD image sensor with an antiblooming structure

Ishihara, Y., Oda, E., Tanigawa, H., Kohno, A., Teranishi, N., Takeuchi, E., Akiyama, I., Kamata, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 989 KB

english, 1984

14

An analog technology integrates bipolar, CMOS, and high-voltage DMOS transistors

Krishna, S., Kuo, J., Gaeta, I.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 792 KB

english, 1984

15

Electrical characterization of feature sizes and parasitic capacitances using a single test structure

Vitanov, P., Schwabe, U., Eisele, I.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 540 KB

english, 1984

16

Dember effect in fast photoconductive circuit elements

Bor-Yuan Hwang, Lindholm, F.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 318 KB

english, 1984

17

Choice of dielectrics for TFEL displays

Tiku, S.K., Smith, G.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 389 KB

english, 1984

18

Breakdown voltage design considerations in VDMOS structures

Mena, J.G., Salama, C.A.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 509 KB

english, 1984

19

Latchup model for the parasitic p-n-p-n path in bulk CMOS

Fang, R.C.-Y., Moll, J.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 898 KB

english, 1984

20

A method of analyzing the induced current profiles obtained on a Schottky diode at normal irradiation

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 327 KB

english, 1984

21

Comments on "A method for determining energy gap narrowing in highly doped semiconductors"

del Alamo, J.A., Swanson, R.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 249 KB

english, 1984

22

Reply to "comments on 'a method for determining energy gap narrowing in highly doped semiconductors'"

Neugroschel, A., Lindholm, F.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 299 KB

english, 1984

23

[Back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 2.17 MB

english, 1984

24

A reliable approach to charge-pumping measurements in MOS transistors

Groeseneken, G., Maes, H.E., Beltran, N., De Keersmaecker, R.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 1.19 MB

english, 1984