Volume 34; Issue 8

IEEE Transactions on Electron Devices

Volume 34; Issue 8

1

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 411 KB

english, 1987

2

Changes in the editorial board

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 264 KB

english, 1987

3

Surface charge effects on planar submicrometer GaAs and InP devices

Bru, C., de Carne, P., Dansas, P., Pascal, D., Rousseau, M., Laval, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 720 KB

english, 1987

4

Nonlinear charge control in AlGaAs/GaAs modulation-doped FET's

Hughes, W.A., Snowden, C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 921 KB

english, 1987

5

Correlation of undoped, in-alloyed, and whole-ingot annealed semi-insulating GaAs substrates for low-noise microwave amplifiers

Kanber, H., Wang, D.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 560 KB

english, 1987

6

Multiple-input and -output OR/AND circuits for VLSI GaAs IC's

Tho Truong Vu, Lee, K.W., Peczalski, A., Lee, G.M., Somal, H.S., Betten, W.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 1.22 MB

english, 1987

7

Very low resistance nonalloyed ohmic contacts to Sn-doped molecular-beam epitaxial GaAs

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 968 KB

english, 1987

8

Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors

Baek, J., Shur, M.S., Daniels, R.R., Arch, D.K., Abrokwah, J.K., Tufte, O.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 797 KB

english, 1987

9

Optimization and modeling of avalanche photodiode structures: Application to a new class of superlattice photodetectors, the p-i-n, p-n homojunction, and p-n heterojunction APD's

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 1.11 MB

english, 1987

10

A high-speed 1-kbit high electron mobility transistor static RAM

Sheng, N.H., Wang, H.T., Lee, C.P., Sullivan, G.J., Miller, D.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 949 KB

english, 1987

11

An improved method of MOSFET modeling and parameter extraction

Krutsick, T.J., White, M.H., Hon-Sum Wong, Booth, R.V.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 592 KB

english, 1987

12

Nonplanar oxidation and reduction of oxide leakage currents at silicon corners by rounding-off oxidation

Yamabe, K., Imai, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 735 KB

english, 1987

13

Rapid isothermal processing with electron beams of small-geometry CMOS devices

Yallup, K.J., Godfrey, D.J., McMahon, R.A., Ahmed, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 601 KB

english, 1987

14

The effect of heat treatment on Au Schottky contacts on β-SiC

Ioannou, D.E., Papanicolaou, N.A., Nordquist, P.E., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 913 KB

english, 1987

15

Ion-sensing devices with silicon nitride and borosilicate glass insulators

Harame, D.L., Bousse, L.J., Shott, J.D., Meindl, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 1016 KB

english, 1987

16

CMOS-Compatible bipolar and I2L technology using three-level epitaxial layers for analog/Digital VLSI's

Washio, K., Okada, Y., Okabe, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 786 KB

english, 1987

17

Measurement and modeling of circuit speed of CMOS on oxygen-implanted SOI

Davis, J.R., Hopper, G.F., Reeson, K.J., Hemment, P.L.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 718 KB

english, 1987

18

Bipolar transistor action and transport effects relating to CMOS latchup

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 1.14 MB

english, 1987

19

Heating effects on the accuracy of HBT voltage comparators

Keh-Chung Wang, Asbeck, P.M., Chang, M.-C.F., Miller, D.L., Sullivan, G.J., Corcoran, J.J., Hornak, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 876 KB

english, 1987

20

Methodology for bipolar process diagnosis and its application to advanced self-aligned bipolar transistors

Li, G.P., Hackbarth, E., Ching-Te Chuang, Denny Duan-Lee Tang, Tze-Chiang Chen

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 721 KB

english, 1987

21

A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part I: One-dimensional model

Stubing, H., Rein, H.-M.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 1.11 MB

english, 1987

22

A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part II: Two-dimensional model and experimental results

Rein, H.-M., Schroter, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 1.15 MB

english, 1987

23

A permeable-base switching device using stacked layers of silicon, silicon dioxide, and silicon-rich silicon dioxide

DiMaria, D.J., Arienzo, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 761 KB

english, 1987

24

The resonant-tunneling field-effect transistor: A new negative transconductance device

Sen, S., Capasso, F., Beltram, F., Cho, A.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 988 KB

english, 1987

25

Electrical characterization of heavily doped polycrystalline silicon for high-frequency bipolar transistor application

Kim, D.M., Feng Qian, Bickford, C.U., Hee Kyun Park

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 881 KB

english, 1987

26

The Schottky-gated hall-effect transistor and its application to carrier concentration and mobility profiling in GaAs MESFET's

Farley, C.W., Streetman, B.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 829 KB

english, 1987

27

Walkout in p-n junctions including charge trapping saturation

Wei Lian Guo, Ruey-Shing Huang, Zheng, L.Z., Song, Y.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 699 KB

english, 1987

28

Statistics of electrons and holes in heavily doped n-silicon

Dhariwal, S.R., Ojha, V.N., Srivastava, G.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 738 KB

english, 1987

29

A new cryoelectronic device family

Mannhart, J., Parisi, J., Mayer, K.M., Huebener, R.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 751 KB

english, 1987

30

High-power double-interdigitated (TIL) GTO/GAT thyristors

Silard, A.P., Turtudau, F.I., Margarit, M.N., Kosa, B.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 1.05 MB

english, 1987

31

Field reduction regions for compact high-voltage IC's

Sugawara, Y., Kamei, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 708 KB

english, 1987

32

Nonplanar multiple-epitaxy bipolar power integrated-circuit process

Curran, P., Ang, S.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 1.34 MB

english, 1987

33

Velocity-field dependence in GaAs

Jingming Xu, Shur, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 230 KB

english, 1987

34

An improved presentation of the potential profile in linearly graded p-n junctions

Jindal, C., Panayotatos, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 413 KB

english, 1987

35

A simplified model to predict the linear temperature coefficient of a CMOS inverter's delay time

Chang, L., Khoa Vo, Berg, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 426 KB

english, 1987

36

Comments on "An exact formula for the effects of resistor geometry on current noise"

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 116 KB

english, 1987

37

Announcements

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 57 KB

english, 1987

38

Raman scattering as a diagnostic technique for cathode characterization

Benner, R.E., Mitchell, J.R., Grow, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 603 KB

english, 1987

39

A systematic analysis of two-electrode electrostatic lenses

Szilagyi, M., Szep, J., Lugosi, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 970 KB

english, 1987

40

Beam brightness of patchy temperature-limited cathodes

Greene, R.F., Marrian, C.R.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 297 KB

english, 1987

41

Failure analysis of ceramic feedthroughs used in traveling-wave tubes

Hsien-Yang Yeh, Hen-Geul Yeh

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 620 KB

english, 1987

42

Bulk reduction and field enhancement in periodic permanent-magnet structures

Leupold, H.A., Clarke, J.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 477 KB

english, 1987

43

The helically wrapped circular waveguide

Bunch, K.J., Grow, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 1.15 MB

english, 1987

44

Corrections to "Synthesis of a hollow-beam pierce gun"

Vaughan, J.R.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 60 KB

english, 1987

45

[Back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 1.37 MB

english, 1987