Volume 39; Issue 1

IEEE Transactions on Electron Devices

Volume 39; Issue 1

1

Single-wafer integrated semiconductor device processing

Moslehi, M.M., Chapman, R.A., Wong, M., Paranjpe, A., Najm, H.N., Kuehne, J., Yeakley, R.L., Davis, C.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 3.48 MB

english, 1992

2

Impurity diffusion behavior of bipolar transistor under low-temperature furnace annealing and high-temperature RTA and its optimization for 0.5-μm Bi-CMOS process

Norishima, M., Iwai, H., Niitsu, Y., Maeguchi, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 854 KB

english, 1992

3

Rapid-thermal annealing for quantum-well heterostructure device fabrication

Myers, D.R., Vawter, G.A., Jones, E.D., Zipperian, T.E., Drummond, T.J., Fritz, I.J., Dawson, L.R., Brennan, T.M., Hammons, B.E., Datye, A.K., Simons, D.S., Comas, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.11 MB

english, 1992

4

Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealing

Sadwick, L.P., Streit, D.C., Jones, W.L., Kim, C.W., Hwu, R.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 643 KB

english, 1992

5

Rapid isothermal processing of strained GeSi layers

Nayak, D.K., Kamjoo, K., Park, J.S., Woo, J.C.S., Wang, K.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 873 KB

english, 1992

6

Epitaxial growth of β-SiC on Si by RTCVD with C3H 8 and SiH4

Steckl, A.J., Li, J.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 2.06 MB

english, 1992

7

Temperature uniformity in RTP furnaces

Sorrell, F.Y., Fordham, M.J., Ozturk, M.C., Wortman, J.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 707 KB

english, 1992

8

Silicon temperature measurement by infrared absorption. Fundamental processes and doping effects

Sturm, J.C., Reaves, C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 767 KB

english, 1992

9

Wavelength-specific pyrometry as a temperature measurement tool

Delfino, M., Hodul, D.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 600 KB

english, 1992

10

Defect generation and gettering during rapid thermal processing

Hartiti, B., Muller, J.-C., Siffert, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1000 KB

english, 1992

11

Shallow-junction formation on silicon by rapid thermal diffusion of impurities from a spin-on source

Usami, A., Ando, M., Tsunekane, M., Wada, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 636 KB

english, 1992

12

Estimation of effective diffusion time in a rapid thermal diffusion using a solid diffusion source

Cho, B.-J., Park, S.-K., Kim, C.-K.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 701 KB

english, 1992

13

Deep-submicrometer CMOS technology with reoxidized or annealed nitrided-oxide gate dielectrics prepared by rapid thermal processing

Hori, T., Akamatsu, S., Odake, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 969 KB

english, 1992

14

Thin-gate SiO2 films formed by in situ multiple rapid thermal processing

Fukuda, H., Arakawa, T., Ohno, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 761 KB

english, 1992

15

Hot-carrier effects in MOSFET's with nitrided-oxide gate-dielectrics prepared by rapid thermal processing

Hori, T., Yasui, T., Akamatsu, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.45 MB

english, 1992

16

Thin fluorinated gate dielectrics grown by rapid thermal processing in O2 with diluted NF3

Lo, G.Q., Ting, W., Ahn, J.H., Kwong, D.-L., Kuehne, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 668 KB

english, 1992

17

Rapid isothermal processing for fabrication of GaAs-based electronic devices [HBTs]

Pearton, S.J., Ren, F., Katz, A., Fullowan, T.R., Abernathy, C.R., Hobson, W.S., Kopf, R.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 579 KB

english, 1992

18

Rapid isothermal annealing of high- and low-energy ion-implanted InP and In0.53Ga0.47As

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 709 KB

english, 1992

19

Ion implantation in gallium arsenide MESFET technology

de Souza, J.P., Sadana, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.08 MB

english, 1992

20

The effects of point defects on the electrical activation of Si-implanted GaAs during rapid thermal annealing

Lee, J.-L., Wei, L., Tanigawa, S., Nakagawa, T., Ohta, K., Lee, J.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.17 MB

english, 1992

21

Rapid isothermal processing of Pt/Ti contacts to p-type III-V binary and related ternary materials

Katz, A., Chu, S.N.G., Weir, B.E., Abernathy, C.R., Hobson, W.S., Pearton, S.J., Savin, W.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.28 MB

english, 1992

22

Structural and electrical properties of furnace and rapid thermally annealed LPCVD WSi2 films on single-crystal, polycrystalline, and amorphous silicon substrates

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 1.58 MB

english, 1992

23

Characterization of semiconducting iron disilicide obtained by LRP/CVD

Regolini, J., Trincat, F., Sagnes, I., Shapira, Y., Bremond, G., Bensahel, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 222 KB

english, 1992

24

Temperature control in a rapid thermal processor

Dilhac, J.-M., Ganibal, C., Bordeneuve, J., Nolhier, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 297 KB

english, 1992

25

Role of dopant incorporation in low-temperature Si epitaxial growth by rapid thermal processing chemical vapor deposition

Hsieh, T.Y., Jung, K.H., Kwong, D.L., Hitzman, C.J., Brennan, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 405 KB

english, 1992

26

Optimization of transient temperature uniformity in RTP systems

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 351 KB

english, 1992

27

Capacitance control of the Al/TiW/amorphous-Si system by rapid thermal processing

Berger, S., Komen, Y., Weiss, B.Z.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 221 KB

english, 1992

28

Rapid isothermal processing of Si+/P+ and Mg +/P+ co-implantations into InP

Shen, H., Yang, G., Zhou, Z., Lin, C., Zou, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1992

Language:

english

File:

PDF, 329 KB

english, 1992