Volume 41; Issue 2

IEEE Transactions on Electron Devices

Volume 41; Issue 2

1

Numerical modeling of photon recycling in solar cells

Durbin, S.M., Gray, J.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 700 KB

english, 1994

2

SOI MOSFET effective channel mobility

Sherony, M.J., Su, L.T., Chung, J.E., Antoniadis, D.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 217 KB

english, 1994

3

An analytical SiGe-base HBT model and its effects on a BICMOS inverter circuit

Lu, T.C., Kuo, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 513 KB

english, 1994

4

An experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 410 KB

english, 1994

5

Inverse base-width modulation and collector space-charge-region widening: degrading effects at high current densities in highly scaled BJT's (and HBT's)

Ugajin, M., Ghy-Boong Hong, Fossum, J.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 338 KB

english, 1994

6

An experimental investigation of the end-hat effects in a crossed-field amplifier via three-dimensional electron density measurements

Ye, J.Z., Chung Chan, MacGregor, R., Ruden, T.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 721 KB

english, 1994

7

Measurements of failure phenomena in inductively loaded multi-cathode GTO thyristors

Bleichner, H., Rosling, M., Bakowski, M., Vobecky, J., Nordlander, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 681 KB

english, 1994

8

A novel high-voltage high-speed MESFET using a standard GaAs digital IC process

Mok, P.K.T., Salama, C.A.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 446 KB

english, 1994

9

A new parameter extraction technique for small-signal equivalent circuit of polysilicon emitter bipolar transistors

Seonghearn Lee, Ryum, B.R., Sang Won Kang

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 589 KB

english, 1994

10

Electrical properties of heavily doped polycrystalline silicon-germanium films

King, T.-J., McVittie, J.P., Saraswat, K.C., Pfiester, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 494 KB

english, 1994

11

Temperature dependence of the anomalous leakage current in polysilicon-on-insulator MOSFET's

Bhattacharya, S.S., Banerjee, S.K., Nguyen, B.-Y., Tobin, P.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 697 KB

english, 1994

12

2-D simulation of interface properties of a polysilicon-contacted BJT: is there a residual potential barrier after the oxide is broken?

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 414 KB

english, 1994

13

Effect of base profile on the base transit time of the bipolar transistor for all levels of injection

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 392 KB

english, 1994

14

Lateral polysilicon pn diodes: current-voltage characteristics simulation between 200 K and 400 K using a numerical approach

Aziz, A., Bonnaud, O., Lhermite, H., Raoult, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 882 KB

english, 1994

15

The influence of emitter-base junction design on collector saturation current, ideality factor, Early voltage, and device switching speed of Si/SiGe HBT's

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 600 KB

english, 1994

16

The performance and reliability of 0.4 micron MOSFET's with gate oxynitrides grown by rapid thermal processing using mixtures of N2 O and O2

Okada, Y., Tobin, P.J., Rushbrook, P., DeHart, W.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 654 KB

english, 1994

17

An asymmetric sidewall process for high performance LDD MOSFET's

Horiuchi, T., Homma, T., Murao, Y., Okumura, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 434 KB

english, 1994

18

A light-transmitting two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFT's integrated on a transparent substrate

Okamura, M., Kimura, K., Shirai, S., Yamauchi, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 665 KB

english, 1994

19

Performance and off-state current mechanisms of low-temperature processed polysilicon thin-film transistors with liquid phase deposited SiO2 gate insulator

Ching-Fa Yeh, Shyue-Shyh Lin, Tzung-Zu Yang, Chun-Lin Chen, Yu-Chi Yang

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 690 KB

english, 1994

20

Design and performance analysis of InP-based high-speed and high-sensitivity optoelectronic integrated receivers

John, E., Das, M.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 1.03 MB

english, 1994

21

InGaAs/AlAs/InGaAsP resonant tunneling hot electron transistors grown by chemical beam epitaxy

Chen, W.L., Munns, G.O., East, J.R., Haddad, G.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 668 KB

english, 1994

22

Functions and applications of monostable-bistable transition logic elements (MOBILE's) having multiple-input terminals

Maezawa, K., Akeyoshi, T., Mizutani, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 667 KB

english, 1994

23

Numerical study on the injection performance of AlGaAs/GaAs abrupt emitter heterojunction bipolar transistors

Kyounghoon Yang, East, J.R., Haddad, G.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 984 KB

english, 1994

24

Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications

Mikkelson, C.H., Seabaugh, A.C., Beam, E.A., III, Luscombe, J.H., Frazier, G.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 730 KB

english, 1994

25

Self-consistent modeling of resonant interband tunneling in bipolar tunneling field-effect transistors

Bigelow, J.M., Leburton, J.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 635 KB

english, 1994