Volume 42; Issue 2

IEEE Transactions on Electron Devices

Volume 42; Issue 2

1

Forward biased safe operating area of emitter switched thyristors

Iwamuro, N., Shekar, M.S., Jayant Baliga, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 627 KB

english, 1995

2

A novel MESFET fabricated by a simple internal interconnection technique

Han Dejun, Chan, K.T., Li GuoHui, Wang WenXun, En-Jun Zhu

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 284 KB

english, 1995

3

The modified structure of the lateral IGBT on the SOI wafer for improving the dynamic latch-up characteristics

Sumida, H., Hirabayashi, A., Kumagai, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 399 KB

english, 1995

4

Comparison of the optimum base width for ECL propagation delay and maximum oscillation frequency

Vaidyanathan, M., Roulston, D.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 334 KB

english, 1995

5

A new approach for modeling of current degradation in hot-electron damaged LDD NMOSFETs

Ytterdal, T., Kim, S.-H., Lee, K., Fjeldly, T.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 399 KB

english, 1995

6

Long-term bias temperature reliability of P+ polysilicon gated FET devices

Abadeer, W.W., Tonti, W.R., Hansch, W.E., Schwalke, U.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 316 KB

english, 1995

7

Measurement of junction temperature of an AlGaAs/GaAs heterojunction bipolar transistor operating at large power densities

Liu, W., Yuksel, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 333 KB

english, 1995

8

Characteristics of new dielectric isolation wafers for high voltage power IC's by single-Si poly-Si direct bonding (SPSDB) technique

Inoue, Y., Sugawara, Y., Kurita, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 351 KB

english, 1995

9

Linear theory of slow wave cyclotron interaction in double-ridged folded rectangular waveguide

Ganguly, A.K., Choi, J.J., Armstrong, C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 639 KB

english, 1995

10

Beam focusing for field-emission flat-panel displays

Kesling, W.D., Hunt, C.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 1017 KB

english, 1995

11

Finite element analysis of Hall effect and magnetoresistance

Brauer, J.R., Ruehl, J.J., MacNeal, B.E., Hirtenfelder, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 514 KB

english, 1995

12

Base current reversal phenomenon in a CMOS compatible high gain n-p-n gated lateral bipolar transistor

Tzuen-Hsi Huang, Ming-Jer Chen

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 687 KB

english, 1995

13

Frequency-resolved measurements for the characterization of MOSFET parameters at low longitudinal field

Selmi, L., Ricco, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 566 KB

english, 1995

14

Characteristics of self-induced lightly-doped-drain polycrystalline silicon thin film transistors with liquid-phase deposition SiO2 as gate-insulator and passivation-layer

Ching-Fa Yeh, Tzung-Zu Yang, Tai-Ju Chen

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 767 KB

english, 1995

15

An improved analytical solution of energy balance equation for short-channel SOI MOSFET's and transverse-field-induced carrier heating

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 524 KB

english, 1995

16

An advanced technique for fabricating hemispherical-grained (HSG) silicon storage electrodes

Watanabe, H., Tatsumi, T., Ikarashi, T., Sakai, A., Aoto, N., Kikkawa, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 807 KB

english, 1995

17

Transconductance enhancement due to back bias for submicron NMOSFET

Jyh-Chyurn Guo, Ming-Chien Chang, Chih-Yuan Lu, Hsu, C.C.-H., Chung, S.S.-S.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 695 KB

english, 1995

18

A physically based C∞-continuous model for small-geometry MOSFET's

Iniguez, B., Moreno, E.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 416 KB

english, 1995

19

Modeling of the collector epilayer of a bipolar transistor in the MEXTRAM model

de Graaff, H.C., Kloosterman, W.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 662 KB

english, 1995

20

Precise extraction of emitter resistance from an improved floating collector measurement

Morizuka, K., Hidaka, O., Mochizuki, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 606 KB

english, 1995

21

Universality of electron mobility curves in MOSFETs: a Monte Carlo study

Gamiz, F., Lopez-Villanueva, J.A., Banqueri, J., Carceller, J.E., Cartujo, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 858 KB

english, 1995

22

High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing

Kohno, A., Sameshima, T., Sano, N., Sekiya, M., Hara, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 673 KB

english, 1995

23

Monolithic CCD imagers in HgCdTe

Wadsworth, M.V., Borrello, S.R., Dodge, J., Gooch, R., McCardel, W., Nado, G., Shilhanek, M.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 876 KB

english, 1995

24

Evaluation of the bonded silicon on insulator (SOI) wafer and the characteristics of PIN photodiodes on the bonded SOI wafer

Usami, A., Kaneko, K., Fujii, Y., Ichimura, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 441 KB

english, 1995

25

Cutoff frequency and responsivity limitation of AlInAs/GaInAs MSM PD using a two dimensional bipolar physical model

Ashour, I.S., El Kadi, H., Sherif, K., Vilcot, J.-P., Decoster, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 823 KB

english, 1995

26

Low frequency noise characteristics of self-aligned AlGaAs/GaAs power heterojunction bipolar transistors

Tutt, M.N., Pavlidis, D., Khatibzadeh, A., Bayraktaroglu, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 1.16 MB

english, 1995

27

Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures

Belenky, G.L., Kazarinov, R.F., Lopata, J., Luryi, S., Tanbun-Elk, T., Garbinski, P.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 400 KB

english, 1995

28

Breakdown analysis of an asymmetrical double recessed power MESFET's

Gaquiere, C., Bonte, B., Theron, D., Crosnier, Y., Arsene-Henri, P., Pacou, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 508 KB

english, 1995

29

An investigation of graded and uniform base GexSi1-x HBT's using a Monte Carlo simulation

Hughes, D.T., Abram, R.A., Kelsall, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 739 KB

english, 1995