Volume 43; Issue 4

IEEE Transactions on Electron Devices

Volume 43; Issue 4

1

Negative differential conductivity and isothermal drain breakdown of the GaAs MESFET

Vashchenko, V.A., Kozlov, N.A., Martynov, Y.B., Sinkevitch, V.F., Tager, A.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 616 KB

english, 1996

2

A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications

Jong-Lam Lee, Jae Kyoung Mun, Haecheon Kim, Jai-Jin Lee, Hyung-Moo Park

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 928 KB

english, 1996

3

Threshold voltage uniformity and characterization of microwave performance for GaAs/AlGaAs high electron-mobility transistors grown on Si substrates

Aigo, T., Goto, M., Ohta, Y., Jono, A., Tachikawa, A., Moritani, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1022 KB

english, 1996

4

Breakdown of overlapping-gate GaAs MESFETs

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 767 KB

english, 1996

5

Breakdown walkout in pseudomorphic HEMT's

Menozzi, R., Cova, P., Canali, C., Fantini, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 552 KB

english, 1996

6

Enhanced diffusion by electrical deactivation of arsenic and its implications for bipolar devices

Rousseau, P.M., Griffin, P.B., Kuehne, S.C., Plummer, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 901 KB

english, 1996

7

Charge trap generation in LPCVD oxides under high field stressing

Bhat, N., Apte, P.P., Saraswat, K.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 712 KB

english, 1996

8

A high-performance polysilicon thin-film transistor using XeCl excimer laser crystallization of pre-patterned amorphous Si films

Min Cao, Talwar, S., Kramer, K.J., Sigmon, T.W., Saraswat, K.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 829 KB

english, 1996

9

A physically-based C∞-continuous fully-depleted SOI MOSFET model for analog applications

Iniguez, B., Ferreira, L.F., Gentinne, B., Flandre, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 837 KB

english, 1996

10

Excimer-laser crystallized poly-Si TFT's with transparent gate

Chang-Dong Kim, Matsumura, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 500 KB

english, 1996

11

An effective channel length determination method for LDD MOSFETs

Takeuchi, K., Kasai, N., Kunio, T., Terada, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 799 KB

english, 1996

12

Application of liquid phase deposited silicon dioxide to metal-oxide-semiconductor capacitor and amorphous silicon thin-film transistor

Jenq-Shiuh Chou, Si-Chen Lee

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 619 KB

english, 1996

13

Comparison of gate-induced drain leakage and charge pumping measurements for determining lateral interface trap profiles in electrically stressed MOSFETs

Okhonin, S., Hessler, T., Dutoit, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 773 KB

english, 1996

14

Computer simulation and modeling of graded bandgap CuInSe2 /CdS based solar cells

Dhingra, A., Rothwarf, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 924 KB

english, 1996

15

1/f noise of GaAs resistors on semi-insulating substrates

Forbes, L., Mun Seork Choi, Yan, K.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 668 KB

english, 1996

16

Dynamic oxide voltage relaxation spectroscopy

Mingzhen Xu, Changhua Tan, Yandong He, Xiaowei Liu, Yangyuan Wang

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 846 KB

english, 1996

17

Electrical properties of composite gate oxides formed by rapid thermal processing

Misra, V., Henson, W.K., Vogel, E.M., Hames, G.A., McLarty, P.K., Hauser, J.R., Wortman, J.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.26 MB

english, 1996

18

Evaluation of turn-on performance of P-i-N rectifiers and IGBT's under zero voltage switching

Pendharkar, S., Shenai, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 827 KB

english, 1996

19

Effects of beam velocity spread on two-stage tapered gyro-TWT amplifier

Nguyen, K.T., Gun-Sik Park, Jin Joo Choi, Soo-Yong Park, Parker, R.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 629 KB

english, 1996

20

Spatial retardation of carrier heating in scaled 0.1-μm n-MOSFET's using Monte Carlo simulations

Hulfachor, R.B., Ellis-Monaghan, J.J., Kim, K.W., Littlejohn, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 435 KB

english, 1996

21

Influence of hot carrier transport on the transient response of an InGaAs/InAlAs metal-semiconductor Schottky diode structure

Salem, A.F., Brennan, K.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 273 KB

english, 1996

22

A high-performance lateral PNP transistor structure

Gradinariu, I., Gontrand, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 264 KB

english, 1996

23

Complementary-LVTSCR ESD protection circuit for submicron CMOS VLSI/ULSI

Ming-Dou Ker, Chung-Yu Wu, Hun-Hsien Chang

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.67 MB

english, 1996