Volume 44; Issue 1

IEEE Transactions on Electron Devices

Volume 44; Issue 1

1

Carrier lifetimes in silicon

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 382 KB

english, 1997

2

Analysis of device parameters for pnp-type AlGaAs/GaAs HBTs including high-injection using new direct parameter extraction

Kameyama, A., Massengale, A., Changhong Dai, Harris, J.S., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 426 KB

english, 1997

3

Monolithic integration of a 94 GHz AlGaAs/GaAs 2-DEG mixer on quartz substrate by epitaxial lift-off

Basco, R., Prabhu, A., Yngvesson, S., Kei May Lau

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 135 KB

english, 1997

4

Analysis of the temperature dependence of current gain in heterojunction bipolar transistors

Ng, C.-M.S., Houston, P.A., Ho-Kwang Yow

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 297 KB

english, 1997

5

Substrate-related kink effects with a strong light-sensitivity in AlGaAs/InGaAs PHEMT

Haruyama, J., Negishi, H., Nishimura, Y., Nashimoto, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 253 KB

english, 1997

6

An integrated PIN/MISS OEIC for high current photoreceiver applications

Fang, Y.K., Kun-Hsien Lee, Kun-Hsien Wu, Chung-Yang Tsao

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 263 KB

english, 1997

7

White-light emitting thin-film electroluminescent device using micromachined structure

Yun-Hi Lee, Byeong-Kwon Ju, Man-Ho Song, Dong-Ho Kim, Taek-Sang Hahn, Myung-Hwan Oh

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 495 KB

english, 1997

8

15-μm 128×128 GaAs/AlxGa1-xAs quantum well infrared photodetector focal plane array camera

Gunapala, S.D., Park, J.S., Sarusi, G., True-Lon Lin, Liu, J.K., Maker, P.D., Muller, R.E., Shott, C.A., Hoelter, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 378 KB

english, 1997

9

9-μm cutoff 256×256 GaAs/AlxGa1-xAs quantum well infrared photodetector hand-held camera

Gunapala, S.D., Liu, J.K., Park, J.S., Sundaram, M., Shott, C.A., Hoelter, T., True-Lon Lin, Massie, S.T., Maker, P.D., Muller, R.E., Sarusi, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 399 KB

english, 1997

10

Breakdown voltage of the surface glow discharge

Rosenkranz, J., Pekarek, S., Zacek, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 152 KB

english, 1997

11

Effects of NH3 plasma passivation on N-channel polycrystalline silicon thin-film transistors

Huang-Chung Cheng, Fang-Shing Wang, Chun-Yao Huang

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 138 KB

english, 1997

12

Sub-Poisson statistics observed in an electronically shuttered and back-illuminated CCD pixel

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 155 KB

english, 1997

13

Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films

Mehregany, M., Lijun Tong, Matus, L.G., Larkin, D.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 187 KB

english, 1997

14

Investigation of Si/SiGe-based FET geometries for high frequency performance by computer simulation

O'Neill, A.G., Antoniadis, D.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 313 KB

english, 1997

15

Subthreshold analysis of an MOS analog switch

Aghtar, S., Haslett, J.W., Trofimenkoff, F.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 304 KB

english, 1997

16

Effect of post-PECVD photo-assisted anneal on multicrystalline silicon solar cells

Li Cai, Rohatgi, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 152 KB

english, 1997

17

MOSFET transistors fabricated with high permitivity TiO2 dielectrics

Campbell, S.A., Gilmer, D.C., Xiao-Chuan Wang, Ming-Ta Hsieh, Hyeon-Seag Kim, Gladfelter, W.L., Jinhua Yan

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 624 KB

english, 1997

18

Degradation of silicon bipolar junction transistors at high forward current densities

Carroll, M.S., Neugroschel, A., Chih-Tang Sah

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 816 KB

english, 1997

19

Thermionic emission model of electron gate current in submicron NMOSFETs

Hasnat, K., Choh-Fei Yeap, Jallepalli, S., Hareland, S.A., Shih, W.-K., Agostinelli, V.M., Tasch, A.F., Maziar, C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 275 KB

english, 1997

20

On buried oxide effects in SOI lateral bipolar transistors

Banna, S.R., Chan, P.C.H., Lau, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 165 KB

english, 1997

21

A side-wall transfer-transistor cell (SWATT cell) for highly reliable multi-level NAND EEPROMs

Aritome, S., Takeuchi, Y., Sato, S., Watanabe, I., Shimizu, K., Hemink, G., Shirota, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 431 KB

english, 1997

22

Polyoxides grown on n+ polysilicon

Shye Lin Wu, Chun Yuan Chen, Ta Yow Lin, Chung Len Lee, Tan Fu Lei, Mong Song Liang

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 235 KB

english, 1997

23

New analytical expressions for dark current calculations of highly doped regions in semiconductor devices

Burgers, A.R., Leguijt, C., Lolgen, P., Sinke, W.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 364 KB

english, 1997

24

Electromigration noise measurements using a novel AC/DC wafer-level noise measurement system

Yassine, A.M., Tsong-Ming Chen, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 215 KB

english, 1997

25

Optimization of interconnection-induced breakdown voltage in junction isolated IC's using biased polysilicon field plates

Murray, A.F.J., Lane, W.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 223 KB

english, 1997

26

Forward transient charge injection in psn diodes at medium to high injection levels

Chudobiak, M.J., Walkey, D.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 199 KB

english, 1997

27

Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n+-i-p+-i-n+ structures

Liu, Y.X., Plotka, P., Suto, K., Oyama, Y., Nishizawa, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 101 KB

english, 1997

28

Dependence of the injection current at lasing threshold on structure and losses in AlGaN/GaN lasers

Shah, P., Mitin, V.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 104 KB

english, 1997

29

Comments on "Generalized representation of electric fields in interaction gaps of klystrons and traveling-wave tubes"

Kamada, A., Onodera, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 78 KB

english, 1997

30

Gate-controlled lateral PNP BJT: characteristics, modeling and circuit applications

Zhixin Yan, Deen, M.J., Malhi, D.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 423 KB

english, 1997