Volume 46; Issue 1

IEEE Transactions on Electron Devices

Volume 46; Issue 1

1

Temperature-dependent kink effect model for partially-depleted SOI NMOS devices

Lin, S.C., Kuo, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 247 KB

english, 1999

2

Oscillation effects in IGBT's related to negative capacitance phenomena

Omura, I., Fichtner, W., Ohashi, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 268 KB

english, 1999

3

On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness

Meneghesso, G., Neviani, A., Oesterholt, R., Matloubian, M., Liu, T., Brown, J.J., Canali, C., Zanoni, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 227 KB

english, 1999

4

Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's

Borgarino, M., Plana, R., Delage, S.L., Fantini, F., Graffeuil, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 155 KB

english, 1999

5

A 63-170 GHz second-harmonic operation of an InP transferred electron device

Jones, S.H., Zybura, M.F., Carlstrom, J.E., O'Brien, T.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 249 KB

english, 1999

6

Enhancement of high-temperature high-frequency performance of GaAs-based FETs by the high-temperature electronic technique

Narasimhan, R., Sadwick, L.P., Hwu, R.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 146 KB

english, 1999

7

A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications

Maher, H., Decobert, J., Falcou, A., Le Pallec, M., Post, G., Nissim, Y.I., Scavennec, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 303 KB

english, 1999

8

High-performance GaAs MESFETs with advanced LDD structure for digital, analog, and microwave applications

Nakajima, S., Yanagisawa, M., Tsumura, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 538 KB

english, 1999

9

The effect of gate recess profile on device performance of Ga0.51In0.49P/In0.2Ga0.8As doped-channel FET's

Shey-Shi Lu, Chin-Chun Meng, Yo-Sheng Lin, Hai Lan

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 249 KB

english, 1999

10

Multibit resonant tunneling diode SRAM cell based on slew-rate addressing

van der Wagt, J.P.A., Tang, H., Broekaert, T.P.E., Seabaugh, A.C., Kao, Y.-C.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 479 KB

english, 1999

11

Rapid thermal anneal of gate oxides for low thermal budget TFT's

Bhat, N., Wang, A.W., Saraswat, K.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 220 KB

english, 1999

12

Numerical calculation of electromigration under pulse current with Joule heating

Zhihong Li, Guoying Wu, Yangyuan Wang, Zhiguo Li, Yinghua Sun

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 259 KB

english, 1999

13

The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films

Zhonghe Jin, Moulding, K., Kwok, H.S., Wong, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 324 KB

english, 1999

14

Intersubband optical absorption in strained double barrier quantum well infrared photodetectors

Shi, J.-J., Goldys, E.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 201 KB

english, 1999

15

An analytical model of MAGFET sensitivity including secondary effects using a continuous description of the geometric correction factor G

von Kluge, J.W.A., Langheinrich, W.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 254 KB

english, 1999

16

Hybrid infrared focal plane signal and noise model

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 597 KB

english, 1999

17

A monolithically integrated three-axis accelerometer using CMOS compatible stress-sensitive differential amplifiers

Takao, H., Matsumoto, Y., Ishida, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 621 KB

english, 1999

18

A new leakage mechanism of Co salicide and optimized process conditions [for CMOS]

Goto, K.-I., Fushida, A., Watanabe, J., Sukegawa, T., Tada, Y., Nakamura, T., Yamazaki, T., Sugii, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 496 KB

english, 1999

19

A new and flexible scheme for hot-electron programming of nonvolatile memory cells

Esseni, D., Della Strada, A., Cappelletti, P., Ricco, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 338 KB

english, 1999

20

Observation of “capacitance overshoot” in the transient current measurement of polysilicon TFT's

Tam, S.W.-B., Migliorato, P., Lui, O.K.B., Quinn, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 173 KB

english, 1999

21

Three-dimensional DIBL for shallow-trench isolated MOSFET's

Wang, C.H., Zhang, P.-F.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 287 KB

english, 1999

22

Junction leakage characteristics in modified LOCOS isolation structures with a nitride spacer

Se-Aug Jang, In-Seok Yeo, Young-Bog Kim

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 255 KB

english, 1999

23

Substrate-bias effect and source-drain breakdown characteristics in body-tied short-channel SOI MOSFET's

Maeda, S., Hirano, Y., Yamaguchi, Y., Iwamatsu, T., Ipposhi, T., Ueda, K., Mashiko, K., Maegawa, S., Abe, H., Nishimura, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 295 KB

english, 1999

24

A new soft breakdown model for thin thermal SiO2 films under constant current stress

Tomita, T., Utsunomiya, H., Sakura, T., Kamakura, Y., Taniguchi, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 190 KB

english, 1999

25

A physical-based analytical turn-on model of polysilicon thin-film transistors for circuit simulation

Gi-Young Yang, Sung-Hoi Hur, Chul-Hi Han

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 320 KB

english, 1999

26

Whole-chip ESD protection design with efficient VDD-to-VSS ESD clamp circuits for submicron CMOS VLSI

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 1002 KB

english, 1999

27

Nonlinear device noise models: Satisfying the thermodynamic requirements

Wyatt, J.L., Jr., Coram, G.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 315 KB

english, 1999

28

The 1/f noise of InP based 2DEG devices and its dependence on mobility

Berntgen, J., Heime, K., Daumann, W., Auer, U., Tegude, F.-J., Matulionis, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 372 KB

english, 1999

29

Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's

Kolev, P.V., Deen, M.J., Kierstead, J., Citterio, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 282 KB

english, 1999

30

Surface-states effects on GaAs FET electrical performance

Ohno, Y., Francis, P., Nogome, M., Takahashi, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 265 KB

english, 1999

31

Field and temperature acceleration model for time-dependent dielectric breakdown

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 294 KB

english, 1999

32

Analysis of the spurious negative resistance of PN junction avalanche breakdown

Sung-Joon Hong, Jae-Joon Kim, Young June Park, Hong Shick Min

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 200 KB

english, 1999

33

2.5 kV-1000 A power pack IGBT (high power flat-packaged NPT type RC-IGBT)

Takahashi, Y., Yoshikawa, K., Soutome, M., Fujii, T., Kirihata, H., Seki, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 513 KB

english, 1999

34

Measurement of buried oxide thermal conductivity for accurate electrothermal simulation of SOI device

Tenbroek, B.M., Bunyan, R.J.T., Whiting, G., Redman-White, W., Uren, M.J., Brunson, K.M., Lee, M.S.L., Edwards, C.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 108 KB

english, 1999

35

1/f noise in ion sensitive field effect transistors from subthreshold to saturation

Jakobson, C.G., Nemirovsky, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 84 KB

english, 1999

36

Design considerations of high-κ gate dielectrics for sub-0.1-μm MOSFET's

Cheng, B., Cao, M., Vande Voorde, P., Greene, W., Stork, H., Yu, Z., Woo, J.C.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 80 KB

english, 1999

37

A modified lucky electron model for impact ionization rate in NMOSFET's at 77 K

Ling, C.H., See, L.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 152 KB

english, 1999