Volume 49; Issue 1

IEEE Transactions on Electron Devices

Volume 49; Issue 1

1

Essential physics of carrier transport in nanoscale MOSFETs

Lundstrom, M., Ren, Z.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.40 MB

english, 2002

2

Growth of ultrahigh carbon-doped InGaAs and its application to InP/InGaAs(C) HBTs

Jae-Chun Han, Jong-In Song, Sung-Woong Park, Deokha Woo

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.30 MB

english, 2002

3

Novel SOI p-channel MOSFETs with higher strain in si channel using double SiGe heterostructures

Mizuno, T., Sugiyama, N., Tezuka, T., Takagi, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.40 MB

english, 2002

4

Preparation of thin-film transistors with chemical bath deposited CdSe and CdS thin films

Gan, F.Y., Shih, I.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.26 MB

english, 2002

5

Microwave performance and modeling of InAs/AlSb/GaSb resonant interband tunneling diodes

Fay, P., Jiang Lu, Yanyang Xu, Dame, N., Chow, D.H., Schulman, J.N.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.30 MB

english, 2002

6

Two-dimensional quantum effects in nanoscale MOSFETs

Pirovano, A., Lacaita, A.L., Spinelli, A.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.32 MB

english, 2002

7

Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

Johnson, J.W., Zhang, A.P., Wen-Ben Luo, Fan Ren, Pearton, S.J., Park, S.S., Park, Y.J., Jenn-Inn Chyi

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.30 MB

english, 2002

8

Analysis of gate-lag phenomena in recessed-gate and buried-gate GaAs MESFETs

Wakabayashi, A., Mitani, Y., Horio, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.33 MB

english, 2002

9

Formation of titanium silicide on narrow gates using laser thermal processing

Verma, G., Gelatos, C., Talwar, S., Bravman, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.31 MB

english, 2002

10

Temperature behavior of visible and infrared electroluminescent devices fabricated on erbium-doped GaN

Garter, M.J., Steckl, A.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.31 MB

english, 2002

11

Clarification of floating-body effects on drive current and short channel effect in deep sub-0.25 μm partially depleted SOI MOSFETs

Matsumoto, T., Maeda, S., Hirano, Y., Eikyu, K., Yamaguchi, Y., Maegawa, S., Inuishi, M., Nishimura, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.36 MB

english, 2002

12

Sub-100-nm vertical MOSFET with threshold voltage adjustment

Mori, K., AnhKim Duong, Richardson, W.F.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.55 MB

english, 2002

13

Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices

Wang, H.C.-H., Chih-Chiang Wang, Diaz, C.H., Boon-Khim Liew, Sun, J.Y.-C., Tahui Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.30 MB

english, 2002

14

Accuracy of approximations in MOSFET charge models

McAndrew, C.C., Victory, J.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.45 MB

english, 2002

15

A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs

Sanchez, F.J.G., Ortiz-Conde, A., Cerdeira, A., Estrada, M., Flandre, D., Liou, J.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.33 MB

english, 2002

16

Sub-50-nm physical gate length CMOS technology and beyond using steep halo

Wakabayashi, H., Ueki, M., Narihiro, M., Fukai, T., Ikezawa, N., Matsuda, T., Yoshida, K., Takeuchi, K., Ochiai, Y., Mogami, T., Kunio, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.38 MB

english, 2002

17

On the performance advantage of PD/SOI CMOS with floating bodies

Pelella, M.M., Fossum, J.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.42 MB

english, 2002

18

Quasi-two-dimensional transmission line model (QTD-TLM) for planar ohmic contact studies

Chor, E.F., Lerdworatawee, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.38 MB

english, 2002

19

Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations

Asenov, A., Kaya, S., Davies, J.H.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.35 MB

english, 2002

20

Novel phenomenon of avalanche breakdown saturation with negative resistance in a bipolar transistor

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.28 MB

english, 2002

21

Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer

Formicone, G.F., Saraniti, M., Vasileska, D.Z., Ferry, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.40 MB

english, 2002

22

Properties of the transient of avalanche transistor switching at extreme current densities

Vainshtein, S.N., Yuferev, V.S., Kostamovaara, J.T.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.36 MB

english, 2002

23

Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode

Fujihira, K., Tamura, S., Kimoto, T., Matsunami, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.28 MB

english, 2002

24

A monolithic fully-integrated vacuum-sealed CMOS pressure sensor

Chavan, A.V., Wise, K.D.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.40 MB

english, 2002

25

Stacked amorphous silicon color sensors

Knipp, D., Herzog, P.G., Stiebig, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.31 MB

english, 2002

26

Applications of blow-up theory to thyristor turn-on

Paisana, J., Santos, H.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.29 MB

english, 2002

27

Ultralow leakage characteristics of ultrathin gate oxides (~3 nm) prepared by anodization followed by high-temperature annealing

Chieh-Chih Ting, Yen-Hao Shih, Jenn-Gwo Hwu

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.27 MB

english, 2002

28

Lateral thin-film Schottky (LTFS) rectifier on SOI: a device with higher than plane parallel breakdown voltage

Singh, Y., Kumar, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.31 MB

english, 2002

29

The low frequency noise in reverse biased rectifier diodes

Marinov, O., Deen, M.J., Loukanov, V., Velikov, V.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.32 MB

english, 2002

30

A scalable meander-line resistor model for silicon RFICs

Murji, R., Deen, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.30 MB

english, 2002

31

Compact threshold-voltage model for short-channel partially-depleted (PD) SOI dynamic-threshold MOS (DTMOS) devices

Kuo, J.B., Kuo-Hua Yuan, Shih-Chia Lin

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.43 MB

english, 2002

32

MOSFET subthreshold compact modeling with effective gate overdrive

Khee Yong Lim, Xing Zhou

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.34 MB

english, 2002

33

A simple, high performance TFSOI complementary BiCMOS technology for low power wireless applications

Kumar, M., Tan, Y., Sin, J.K.O.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.29 MB

english, 2002

34

The PSD transfer function

de Bakker, M., Verbeek, P.W., Steenvoorden, G.K., Young, I.T.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.39 MB

english, 2002

35

An experimental investigation on the nature of reverse current of silicon power pn-junctions

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 1.34 MB

english, 2002

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