Volume 49; Issue 2

IEEE Transactions on Electron Devices

Volume 49; Issue 2

1

Sub-ft gain resonance of InP/InGaAs-HBTs

Rohner, M., Willen, B., Jackel, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 220 KB

english, 2002

2

High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

Yen-Wei Chen, Wei-Chou Hsu, Her-Ming Shieh, Yeong-Jia Chen, Yu-Shyan Lin, Yih-Juan Li, Tzong-Bin Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 104 KB

english, 2002

3

SILC as a measure of trap generation and predictor of TBD in ultrathin oxides

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 169 KB

english, 2002

4

A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance

Alam, M.A., Weir, B.E., Silverman, P.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 159 KB

english, 2002

5

A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling

Alam, M.A., Weir, B.E., Silverman, P.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 198 KB

english, 2002

6

On interface and oxide degradation in VLSI MOSFETs. I. Deuterium effect in CHE stress regime

Esseni, D., Bude, J.D., Selmi, L.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 165 KB

english, 2002

7

On interface and oxide degradation in VLSI MOSFETs. II. Fowler-Nordheim stress regime

Esseni, D., Bude, J.D., Selmi, L.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 221 KB

english, 2002

8

Ambipolar Schottky-barrier TFTs

Horng-Chih Lin, Kuan-Lin Yeh, Tiao-Yuan Huang, Ruo-Gu Huang, Sze, S.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 161 KB

english, 2002

9

A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications

Washio, K., Ohue, E., Shimamoto, H., Oda, K., Hayami, R., Kiyota, Y., Tanabe, M., Kondo, M., Hashimoto, T., Harada, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 187 KB

english, 2002

10

Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel

Yee-Chia Yeo, Subramanian, V., Kedzierski, J., Peiqi Xuan, Tsu-Jae King, Bokor, J., Chenming Hu

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 195 KB

english, 2002

11

Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs

Lixin Ge, Fossum, J.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 225 KB

english, 2002

12

Ultralow resistance W/poly-Si gate CMOS technology using amorphous-Si/TiN buffer layer

Wakabayashi, H., Yamamoto, T., Yoshida, K., Soda, E., Tokunaga, K.I., Mogami, T., Kunio, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 186 KB

english, 2002

13

A new compact DC model of floating gate memory cells without capacitive coupling coefficients

Larcher, L., Pavan, P., Pietri, S., Albani, L., Marmiroli, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 166 KB

english, 2002

14

Threshold voltage roll-up/roll-off characteristic control in sub-0.2-μm single workfunction gate CMOS for high-performance DRAM applications

Inaba, S., Katsumata, R., Akatsu, H., Rengarajan, R., Ronsheim, P., Murthy, C.S., Sunouchi, K., Bronner, G.B.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 156 KB

english, 2002

15

Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

Leung, B.H., Chan, N.H., Fong, W.K., Zhu, C.F., Ng, S.W., Lui, H.F., Tong, K.Y., Surya, C., Lu, L.W., Ge, W.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 82 KB

english, 2002

16

Flicker noise in gate overlapped polycrystalline silicon thin-film transistors

Rahal, M., Lee, M., Burdett, A.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 115 KB

english, 2002

17

A novel approach for focusing electron beams using low-cost ceramic grid [field emitter arrays]

Chenggang Xie, Yi Wei, Smith, B.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 147 KB

english, 2002

18

Transparent and quasi-transparent regional solutions to minority-carrier transport in arbitrarily doped semiconductors

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 94 KB

english, 2002

19

Linear cofactor difference method of MOSFET subthreshold characteristics for extracting interface traps induced by gate oxide stress test

Jin He, Xing Zhang, Ru Huang, Yangyuan Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 119 KB

english, 2002

20

Large-area lateral p-i-n photodiode on SOI

Zimmermann, H., Muller, B., Hammer, A., Herzog, K., Seegebrecht, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 88 KB

english, 2002