IEEE Transactions on Electron Devices

1

Gate-drain charge analysis for switching in power trench MOSFETs

Hueting, R.J.E., Hijzen, E.A., Heringa, A., Ludikhuize, A.W., Zandt, M.A.Ai.

Journal:

Year:

2004

Language:

english

File:

PDF, 802 KB

english, 2004

2

Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress

Gallon, C., Reimbold, G., Ghibaudo, G., Bianchi, R.A., Gwoziecki, R., Orain, S., Robilliart, E., Raynaud, C., Dansas, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 931 KB

english, 2004

3

Thermal resistance of metamorphic InP-based HBTs on GaAs substrates using a linearly graded InxGa1-xP metamorphic buffer

Hong Yang, Hong Wang, Radhakrishnan, K., Tan, C.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 558 KB

english, 2004

4

The effect of the discharge aging process on the surface state of MgO film in AC PDPs

Kyung Cheol Choi, Hee-Joong Kim, Bhum Jae Shin

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 615 KB

english, 2004

5

Pocket implantation effect on drain current flicker noise in analog nMOSFET devices

Jun-Wei Wu, Chih-Chang Cheng, Kai-Lin Chiu, Jyh-Chyurn Guo, Wai-Yi Lien, Chih-Sheng Chang, Gou-Wei Huang, Tahui Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 466 KB

english, 2004

6

Hole traps in silicon dioxides. Part I. Properties

Zhang, J.F., Zhao, C.Z., Chen, A.H., Groeseneken, G., Degraeve, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 376 KB

english, 2004

7

Hole-traps in silicon dioxides. Part II. Generation mechanism

Zhao, C.Z., Zhang, J.F., Groeseneken, G., Degraeve, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 366 KB

english, 2004

8

Discrete-time simulation model for 1/f noise

Narasimha, R., Bandi, S., Rao, R.M., Mukund, P.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 361 KB

english, 2004

9

Impact of correlated generation of oxide defects on SILC and breakdown distributions

Ielmini, D., Spinelli, A.S., Lacaita, A.L., van Duuren, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 479 KB

english, 2004

10

Analytical formula for inductance of metal of various widths in spiral inductors

Heng-Ming Hsu

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 332 KB

english, 2004

11

Design optimization of AlInAs-GalnAs HEMTs for low-noise applications

Mateos, J., Gonzalez, T., Pardo, D., Bollaert, S., Parenty, T., Cappy, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 492 KB

english, 2004

12

Moving current filaments in integrated DMOS transistors under short-duration current stress

Denison, M., Blaho, M., Rodin, P., Dubec, V., Pogany, D., Silber, D., Gornik, E., Stecher, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 1.94 MB

english, 2004

13

Defect generation statistics in thin gate oxides

Ielmini, D., Spinelli, A.S., Lacaita, A.L., van Duuren, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 429 KB

english, 2004

14

Comparative study of drift region designs in RF LDMOSFETs

Guangjun Cao, Manhas, S.K., Narayanan, E.M.S., De Souza, M.M., Hinchley, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 409 KB

english, 2004

15

Elimination of chuck-related parasitics in MOSFET gate capacitance measurements

Kraus, P.A., Ahmed, K.Z., Williamson, J.S., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 153 KB

english, 2004

16

A robust all-wet-etching process for mesa formation of InGaAs-InP HBT featuring high uniformity and high reproducibility

Yanagisawa, M., Kotani, K., Kawasaki, T., Yamabi, R., Yaegassi, S., Yano, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 793 KB

english, 2004

17

The effects of deuterium annealing on the reduction of dark currents in the CMOS APS

Hyuck In Kwon, Kwon, O.J., Hyungcheol Shin, Byung-Gook Park, Sang Sik Park, Jong Duk Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 146 KB

english, 2004

18

Characteristics of high-K spacer offset-gated polysilicon TFTs

Zhibin Xiong, Haitao Liu, Chunxiang Zhu, Sin, J.K.O.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 524 KB

english, 2004

19

Average drift mobility and apparent sheet-electron density profiles in strained-Si-SiGe buried-channel depletion-mode n-MOSFETs

Michelakis, K., Vilches, A., Papavassiliou, C., Despotopoulos, S., Fobelets, K., Toumazou, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 456 KB

english, 2004

20

Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks

Bigang Min, Devireddy, S.P., Celik-Butler, Z., Fang Wang, Zlotnicka, A., Hsing-Huang Tseng, Tobin, P.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 594 KB

english, 2004

21

Slow transients in polyimide-passivated InP-InGaAs HBTs: effects of UV irradiation, thermal annealing and electrical stress

Chai-Wah Ng, Hong Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 187 KB

english, 2004

22