Volume 57; Issue 1

IEEE Transactions on Electron Devices

Volume 57; Issue 1

1

Deep-Ultraviolet Light-Emitting Diodes

Shur, M.S., Gaska, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 3.12 MB

english, 2010

2

Blue Organic LEDs With Improved Power Efficiency

Zhang, H.M., Choy, W., Li, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 142 KB

english, 2010

3

GaN-Based LEDs With AZO:Y Upper Contact

Chen, P.H., Lai, W.C., Li-Chi Peng, Kuo, C.H., Chi-Li Yeh, Sheu, J.K., Tun, C.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 398 KB

english, 2010

4

A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs

Meneghini, M., Tazzoli, A., Mura, G., Meneghesso, G., Zanoni, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.72 MB

english, 2010

5

LED-Based Optical Device for Chronic In Vivo Cerebral Blood Volume Measurement

Cox, M.P., Hongtao Ma, Bahlke, M.E., Beck, J.H., Schwartz, T.H., Kymissis, I.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 491 KB

english, 2010

6

Recent Advances in ZnO-Based Light-Emitting Diodes

Yong-Seok Choi, Jang-Won Kang, Dae-Kue Hwang, Seong-Ju Park

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.28 MB

english, 2010

7

Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

Masui, H., Nakamura, S., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 591 KB

english, 2010

8

Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal–Oxide–Silicon Submount

Liann-Be Chang, Kuo-Ling Chiang, Hsin-Yi Chang, Ming-Jer Jeng, Chia-Yi Yen, Cheng-Chen Lin, Yuan-Hsiao Chang, Mu-Jen Lai, Yu-Lin Lee, Tai-Wei Soong

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 850 KB

english, 2010

9

Study on Pulse Waveforms for Improving Voltage Margin and Luminous Efficacy in an AC Plasma Display Panel Having Auxiliary Electrodes

Sung-Min Lee, Chung Sock Choi, Cheol Jang, Kyung Cheol Choi

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 941 KB

english, 2010

10

Current–Voltage Characteristics of Graphane p-n Junctions

Gharekhanlou, B., Khorasani, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 389 KB

english, 2010

11

Comparison of InGaN-Based LEDs Grown on Conventional Sapphire and Cone-Shape-Patterned Sapphire Substrate

Jae-Hoon Lee, Dong-Yul Lee, Bang-Won Oh, Jung-Hee Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.36 MB

english, 2010

12

Heterostructured White Light-Emitting Diode: Nanoscale Interface Analysis and Electroluminescence Studies

Swee Tiam Tan, Junliang Zhao, Iwan, S., Xiao Wei Sun, Xiaohong Tang, Jiandong Ye, Bosman, M., Leijun Tang, Guo-Qiang Lo, Teo, K.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 685 KB

english, 2010

13

III-Nitride-Based Light-Emitting Diodes With GaN Micropillars Around Mesa and Patterned Substrate

Li-Chi Peng, Wei-Chih Lai, Ming-Nan Chang, Tao-Hung Hsueh, Shih-Chang Shei, Jinn-Kong Sheu

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 627 KB

english, 2010

14

Impact of Trapped Charge and Interface Defects on the Degradation of the Optical and Electrical Characteristics in OLEDs

Pinato, A., Cester, A., Meneghini, M., Wrachien, N., Tazzoli, A., Xia, S., Adamovich, V., Weaver, M.S., Brown, J.J., Zanoni, E., Meneghesso, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 946 KB

english, 2010

15

Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact

Song, J.O., Jun-Seok Ha, Tae-Yeon Seong

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.38 MB

english, 2010

16

Polymer-MEMS-Based Optoelectronic Display

Gokdel, Y.D., Sevim, A.O., Mutlu, S., Yalcinkaya, A.D.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.07 MB

english, 2010

17

Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs

Katti, G., Stucchi, M., De Meyer, K., Dehaene, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 554 KB

english, 2010

18

Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes

Chiaria, S., Furno, E., Goano, M., Bellotti, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 2.41 MB

english, 2010

19

Nitride Nanocolumns for the Development of Light-Emitting Diode

Tsung-Yi Tang, Cheng-Hung Lin, Yung-Sheng Chen, Wen-Yu Shiao, Wen-Ming Chang, Che-Hao Liao, Kun-Ching Shen, Chih-Chung Yang, Ming-Chi Hsu, Jui-Hung Yeh, Ta-Cheng Hsu

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 589 KB

english, 2010

20

Laboratory Thin-Film Encapsulation of Air-Sensitive Organic Semiconductor Devices

Subbarao, S.P., Bahlke, M.E., Kymissis, I.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 300 KB

english, 2010

21

A 65-nm High-Frequency Low-Noise CMOS-Based RF SoC Technology

Dajiang Yang, Yuanli Ding, Huang, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 803 KB

english, 2010

22

Thermal Accumulation Effects on the Transient Temperature Responses in LDMOSFETs Under the Impact of a Periodic Electromagnetic Pulse

Zhen Ren, Wen-Yan Yin, Yan-Bing Shi, Qing Huo Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.01 MB

english, 2010

23

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

Marino, F.A., Faralli, N., Palacios, T., Ferry, D.K., Goodnick, S.M., Saraniti, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 444 KB

english, 2010

24

Global Modeling Strategy of Parasitic Coupled Currents Induced by Minority-Carrier Propagation in Semiconductor Substrates

Lo Conte, F., Sallese, J.-M., Pastre, M., Krummenacher, F., Kayal, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.83 MB

english, 2010

25

Electronic Microsystems for Handling of Rare Cells

Bocchi, M., Scarselli, E.F., Guerrieri, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.10 MB

english, 2010

26

The Effect of Random Dopant Fluctuation on Specific Contact Resistivity

Vega, R.A., Lee, V.C., Tsu-Jae King Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.76 MB

english, 2010

27

High-Efficiency Blue Emitting Phosphorescent OLEDs

Chopra, N., Jaewon Lee, Jiangeng Xue, So, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 857 KB

english, 2010

28

Low-Temperature Formation of High-Quality Interlayer for High- Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques

Fukuda, Y., Yazaki, Y., Otani, Y., Sato, T., Toyota, H., Ono, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 519 KB

english, 2010

29

A Self-Aligned InGaAs HEMT Architecture for Logic Applications

Waldron, N., Dae-Hyun Kim, del Alamo, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 814 KB

english, 2010

30

Improvement of Negative Bias Temperature Instability by Stress Proximity Technique

Jian Bo Yang, Chen, T.P., Ying Gong, Shyue Seng Tan, Chee Mang Ng, Lap Chan

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 643 KB

english, 2010

31

Energy and Spatial Distributions of Electron Traps Throughout Stacks as the IPD in Flash Memory Application

Xue Feng Zheng, Wei Dong Zhang, Govoreanu, B., Aguado, D.R., Jian Fu Zhang, Van Houdt, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 607 KB

english, 2010

32

Sub-1-V CMOS Image Sensor Using Time-Based Readout Circuit

Kunhee Cho, Dongmyung Lee, Jeonghwan Lee, Gunhee Han

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 842 KB

english, 2010

33

Novel Multilayer Dipoles for Wireless Inter-/Intraconnects

Qi Wu, Ronghong Jin, Junping Geng

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.11 MB

english, 2010

34

Electronic Structure of InN/GaN Quantum Dots: Multimillion-Atom Tight-Binding Simulations

Ahmed, S., Islam, S., Mohammed, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.36 MB

english, 2010

35

Three-Terminal Probe Reconfigurable Phase-Change Material Switches

Hsinyi Lo, Engkeong Chua, Jian Cheng Huang, Chun Chia Tan, Cheng-Yuan Wen, Rong Zhao, Luping Shi, Chong Tow Chong, Paramesh, J., Schlesinger, T.E., Bain, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 878 KB

english, 2010

36

Data Retention and Program/Erase Sensitivity to the Array Background Pattern in Deca-nanometer nand Flash Memories

Compagnoni, C.M., Ghetti, A., Ghidotti, M., Spinelli, A.S., Visconti, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 605 KB

english, 2010

37

High-Power and High-Efficiency InGaN-Based Light Emitters

Laubsch, A., Sabathil, M., Baur, J., Peter, M., Hahn, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.01 MB

english, 2010

38

Structural Analysis on Organic Thin-Film Transistor With Device Simulation

Chang-Hoon Shim, Maruoka, F., Hattori, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 862 KB

english, 2010

39

Performance of High-Reliability and High-Linearity InGaP/GaAs HBT PAs for Wireless Communication

Min-Chang Tu, Herng-Yih Ueng, Yu-Chi Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.25 MB

english, 2010

40

Effective Mobility in Nanowire FETs Under Quasi-Ballistic Conditions

Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.10 MB

english, 2010

41

Noise-Margin Analysis for Organic Thin-Film Complementary Technology

Bode, D., Rolin, C., Schols, S., Debucquoy, M., Steudel, S., Gelinck, G.H., Genoe, J., Heremans, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.03 MB

english, 2010

42

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 67 KB

english, 2010

43

Guest Editorial Special Issue on Light-Emitting Diodes

Kumar, M. J., Lunardi, L., Meneghesso, G., Pearton, S. J., Schubert, E. F.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 175 KB

english, 2010

44

[Front cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2010

File:

PDF, 212 KB

2010

45

NBTI Lifetime Prediction and Kinetics at Operation Bias Based on Ultrafast Pulse Measurement

Zhigang Ji, Lin, L., Jian Fu Zhang, Kaczer, B., Groeseneken, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 409 KB

english, 2010

46

Changes to the Editorial Board

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 69 KB

english, 2010

47

What Is in a Page Charge?

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 27 KB

english, 2010

48

Blank page [back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2010

File:

PDF, 5 KB

2010

49

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 39 KB

english, 2010

50

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 51 KB

english, 2010

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