52

The a.c. admittance of the p-n PbSSi heterojunction

Year:
1980
Language:
english
File:
PDF, 508 KB
english, 1980
53

Impact of edge effects on charge-packet-splitting accuracy

Year:
1987
Language:
english
File:
PDF, 584 KB
english, 1987
56

Effect of substrate orientation on the properties of the Si/PbS heterojunction

Year:
1980
Language:
english
File:
PDF, 546 KB
english, 1980
66

DLR-TUBSAT, qualification of high precision attitude control in orbit

Year:
1996
Language:
english
File:
PDF, 1.02 MB
english, 1996
67

An analysis of medical care at mass gatherings

Year:
1985
Language:
english
File:
PDF, 97 KB
english, 1985
71

Rare earth doped semiconductors III

Year:
2001
Language:
english
File:
PDF, 44 KB
english, 2001
72

Multiple color capability from rare earth-doped gallium nitride

Year:
2001
Language:
english
File:
PDF, 307 KB
english, 2001
74

Effect of process conditions on gain and loss in GaN:Eu cavities on different substrates

Year:
2008
Language:
english
File:
PDF, 190 KB
english, 2008
80

Excitation pathways and efficiency of

Year:
2009
Language:
english
File:
PDF, 1.07 MB
english, 2009
81

Dopeable styrenic foams used in inertial fusion targets

Year:
2006
Language:
english
File:
PDF, 588 KB
english, 2006
84

Growth and characterization of GaN thin films on SiC SOI substrates

Year:
1997
Language:
english
File:
PDF, 1.06 MB
english, 1997
85

Micromachining of polyimide films with focused ion beams

Year:
1986
Language:
english
File:
PDF, 104 KB
english, 1986
86

Effect of growth conditions on Eu3+ luminescence in GaN

Year:
2010
Language:
english
File:
PDF, 471 KB
english, 2010
87

New spectroscopic data of erbium ions in GaN thin films

Year:
2003
Language:
english
File:
PDF, 257 KB
english, 2003
88

Visible lasing from GaN:Eu optical cavities on sapphire substrates

Year:
2006
Language:
english
File:
PDF, 203 KB
english, 2006
89

Color tunable organic light emitting diodes using Eu complex doping

Year:
2007
Language:
english
File:
PDF, 1.06 MB
english, 2007
90

GaN:Eu electroluminescent devices grown by interrupted growth epitaxy

Year:
2006
Language:
english
File:
PDF, 257 KB
english, 2006
92

DNA – a new material for photonics?

Year:
2007
Language:
english
File:
PDF, 690 KB
english, 2007
96

Auger analysis of the PbS-Si heterojunction

Year:
1980
Language:
english
File:
PDF, 1.04 MB
english, 1980