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56

InAs wire crystals grown by molecular beam epitaxy on porous Si

Year:
1993
Language:
english
File:
PDF, 880 KB
english, 1993
79

GaAs observed by Mössbauer spectroscopy

Year:
1990
Language:
english
File:
PDF, 817 KB
english, 1990
85

Selenium-DX center-doped AlxGa1−xAs grown by molecular beam epitaxy

Year:
1991
Language:
english
File:
PDF, 474 KB
english, 1991
89

Hydrostatic pressure studies of GaAs tunnel diodes

Year:
1998
Language:
english
File:
PDF, 319 KB
english, 1998
93

Elaboration and n-Type Doping of GaAlAs Epitaxial Layers

Year:
1990
Language:
english
File:
PDF, 1.23 MB
english, 1990
99

Surface phonon observed in GaAs wire crystals grown on porous Si

Year:
1998
Language:
english
File:
PDF, 86 KB
english, 1998
100

On the Field of a 2-Block

Year:
1981
Language:
english
File:
PDF, 217 KB
english, 1981