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51

Fabrication of metal–semiconductor–metal (MSM) UV photodetectors with Al0.16Ga0.84N/GaN heterostructures

Dong-Wook Kim, Kyong-Seok Chea, Yong-Jo Park, In-Hwan Lee, Cheul-Ro Lee

Journal:

physica status solidi (a)

Year:

2004

Language:

english

File:

PDF, 179 KB

english, 2004

52

The effects of vacuum annealing on the film properties of titanium boride (TiBx) grown on (100)Si substrate

Young-Ki Lee, Jung-Yuel Kim, You-Kee Lee, Min-Sang Lee, Cheul-Ro Lee, Dong-Koo Park

Journal:

Metals and Materials International

Year:

2001

Language:

english

File:

PDF, 528 KB

english, 2001

53

Thermally stable Nb and Nb/Au ohmic contacts to p-GaN

Han-Ki Kim, Tae-Yeon Seong, Cheul-Ro Lee

Journal:

Journal of Electronic Materials

Year:

2001

Language:

english

File:

PDF, 237 KB

english, 2001

54

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

Journal:

Journal of Electronic Materials

Year:

2002

Language:

english

File:

PDF, 445 KB

english, 2002

55

Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. B. Yakimov, P. S. Vergeles, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, In-Hwan Lee, Cheul-Ro Lee, S. J. Pearton

Journal:

Journal of Electronic Materials

Year:

2007

Language:

english

File:

PDF, 221 KB

english, 2007

56

Different growth behaviors of GaN nanowires grown with Au catalyst and Au + Ga solid solution nano-droplets on Si(111) substrates by using MOCVD

R. Navamathavan, Yong-Ho Ra, Ki-Young Song, Dong-Wook Kim, Cheul-Ro Lee

Journal:

Current Applied Physics

Year:

2011

Language:

english

File:

PDF, 1011 KB

english, 2011

57

Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy

Jin Soo Kim, Dae Kon Oh, Phil Won Yu, Jae-Young Leem, Joo In Lee, Cheul-Ro Lee

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 250 KB

english, 2004

58

The growth behavior of GaN NWs on Si(1 1 1) by the dispersion of Au colloid catalyst using pulsed MOCVD

Ji-Hyoen Park, R. Navamathavan, Yeom-Bo Ra, Yong-Ho Ra, Jin-Soo Kim, Cheul-Ro Lee

Journal:

Journal of Crystal Growth

Year:

2011

Language:

english

File:

PDF, 1.27 MB

english, 2011

59

Enhancement in emission angle of the blue LED chip fabricated on lens patterned sapphire (0 0 0 1)

Suthan Kissinger, Seong-Muk Jeong, Seok-Hyo Yun, Seung Jae Lee, Dong-Wook Kim, In-Hwan Lee, Cheul-Ro Lee

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 791 KB

english, 2010

60

Enhancement in the gain of quantum dot laser by increasing overlap integral between electron and hole wave-functions

Byounggu Jo, Youngsin Yang, Jaesu Kim, Myoungkuk Ko, Kwang Jae Lee, Cheul-Ro Lee, Jin Soo Kim, Byoung Seok Choi, Dae Kon Oh, Jae-Young Leem, Jong Su Kim

Journal:

Thin Solid Films

Year:

2009

Language:

english

File:

PDF, 649 KB

english, 2009

61

Characteristics of UV photodetector fabricated by Al0.3Ga0.7N/GaN heterostructure

In-Seok Seo, In-Hwan Lee, Yong-Jo Park, Cheul-Ro Lee

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 584 KB

english, 2003

62

The influence of AlxGa1−xN intermediate buffer layer on the characteristics of GaN/Si(1 1 1) epitaxy

Seong-Hwan Jang, Seong-Suk Lee, Oh-Yeon Lee, Cheul-Ro Lee

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 534 KB

english, 2003

63

High-quality GaN/Si(1 1 1) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD

Seong-Hwan Jang, Cheul-Ro Lee

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 241 KB

english, 2003

64

High-quality GaN epilayer grown by newly designed horizontal counter-flow MOCVD reactor

Cheul-Ro Lee, Sung-Jin Son, In-Hwan Lee, Jae-Young Leem, Sam Kyu Noh

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 648 KB

english, 1997

65

Effects of hillocks and post-growth annealing on electrical properties in GaN grown by metalorganic chemical vapor deposition

In-Hwan Lee, In-Hoon Choi, Cheul-Ro Lee, Sung-Jin Son, Jae-Young Leem, Sam Kyu Noh

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 515 KB

english, 1997

66

Characteristics of InxGa1 − xNGaN grown by LPMOVPE with the variation of growth temperature

Cheul-Ro Lee, Sung-Jin Son, In-Hwan Lee, Jae-Young Leem, Sam Kyu Noh

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 370 KB

english, 1997

67

Characteristics of Mg-doped GaN epilayers grown with the variation of Mg incorporation

Cheul-Ro Lee, Jae-Young Leem, Sam-Kyu Noh, Seong-Eun Park, Ju-In Lee, Chang-Soo Kim, Sung-Jin Son, Ki-Young Leem

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 187 KB

english, 1998

68

Growth behaviors of GaN/Si heteroepitaxy with various terrace widths grown by the LEPS method

Eun-A Ko, Dong-Wook Kim, Heon-Song, Kannappan Santhakumar, Jin-Soo Kim, In-Hwan Lee, Byung-Joon Baek, Cheul-Ro Lee

Journal:

Metals and Materials International

Year:

2008

Language:

english

File:

PDF, 771 KB

english, 2008

69

Modification in the structural and optical characteristics of InAs quantum dots by manipulating the strain distribution

Byounggu Jo, Cheul-Ro Lee, Jin Soo Kim, Kihyun Pyun, Sam Kyu Noh, Jong Su Kim, Jae-Young Leem, Mee-Yi Ryu

Journal:

Journal of the Korean Physical Society

Year:

2012

Language:

english

File:

PDF, 279 KB

english, 2012

70

A study on structural and electrical properties of low dielectric constant SiOC(–H) thin films deposited via PECVD

R. Navamathavan, R. Nirmala, Chang Young Kim, Cheul-Ro Lee, Chi Kyu Choi

Journal:

Journal of Physics and Chemistry of Solids

Year:

2012

Language:

english

File:

PDF, 546 KB

english, 2012

71

Synthesis and characterization of porous ZnO nanoparticles by hydrothermal treatment of as pure aqueous precursor

Trilochan Sahoo, Myoung Kim, Jong Hyeob Baek, Seong-Ran Jeon, Jin Soo Kim, Yeon-Tae Yu, Cheul-Ro Lee, In-Hwan Lee

Journal:

Materials Research Bulletin

Year:

2011

Language:

english

File:

PDF, 928 KB

english, 2011

72

Size effects of nano-pattern in Si(1 1 1) substrate on the selective growth behavior of GaN nanowires by MOCVD

Ji-Hyeon Park, R. Navamathavan, Cheul-Ro Lee

Journal:

Materials Research Bulletin

Year:

2012

Language:

english

File:

PDF, 1.78 MB

english, 2012

73

Growth characteristics of uniaxial InGaN/GaN MQW/n-GaN nanowires on Si(111) using MOCVD

Ra, Yong-Ho, Navamathavan, R., Lee, Cheul-Ro

Journal:

Year:

2012

Language:

english

File:

PDF, 3.03 MB

english, 2012

74

Growth behavior of GaN epilayers on Si(111) grown by GaN nanowires assisted epitaxial lateral overgrowth

Yeom, Bo-Ra, Navamathavan, R., Park, Ji-Hyeon, Ra, Yong-Ho, Lee, Cheul-Ro

Journal:

Year:

2012

Language:

english

File:

PDF, 726 KB

english, 2012

75

A study on composition, structure and optical properties of copper-poor CIGS thin film deposited by sequential sputtering of CuGa/In and In/(CuGa+In) precursors

Seong-Un Park, Rahul Sharma, K. Ashok, San Kang, Jae-Kwan Sim, Cheul-Ro Lee

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 1.56 MB

english, 2012

76

Formation characteristics of a self-catalyzed GaAs nanowire without a Ga droplet on Si(111)

Dong Woo Park, Cheul-Ro Lee, Jin Soo Kim, Sang Jun Lee, Young Heon Kim, Sam Kyu Noh, Hye Min Oh, Yong Hwan Kim, Jae-Young Leem, Mun Seok Jeong, Jae-Hyun Ryou

Journal:

Journal of the Korean Physical Society

Year:

2012

Language:

english

File:

PDF, 613 KB

english, 2012

77

Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer

Hwang, Jeongwoo, Lee, Kwanjae, Kim, Jin Soo, Lee, Cheul-Ro, Lee, In-Hwan, Lee, Kwangjae, Lee, Jin Hong, Leem, Jae-Young, Kim, Jong Su, Ryou, Jae-Hyun, Dupuis, Russell D.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 798 KB

english, 2013

78

Band gap engineering of tandem structured CIGS compound absorption layer fabricated by sputtering and selenization

Kang, San, Sharma, Rahul, Sim, Jae-Kwan, Lee, Cheul-Ro

Journal:

Journal of Alloys and Compounds

Year:

2013

Language:

english

File:

PDF, 2.35 MB

english, 2013

79

Carrier repopulation process for spatially-ordered InAs/InAlGaAs quantum dots

Lee, Kwang Jae, Jo, Byounggu, Lee, Cheul-Ro, Lee, In-Hwan, Kim, Jin Soo, Oh, Dae Kon, Kim, Jong Su, Lee, Sang Jun, Noh, Sam Kyu, Leem, Jae-Young, Ryu, Mee-Yi

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 1.55 MB

english, 2011

80

Stress relaxation in Si-doped GaN studied by Raman spectroscopy

Lee, In-Hwan, Choi, In-Hoon, Lee, Cheul-Ro, Shin, Eun-joo, Kim, Dongho, Noh, Sam Kyu, Son, Sung-Jin, Lim, Ki Yong, Jae Lee, Hyung

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 348 KB

english, 1998

81

Formation of CIGS thin absorption layer by sequential sputtering of CuGa/In/CuGa precursor on Mo/SLG with post selenization

Jae-Kwan Sim, K. Ashok, Cheul-Ro Lee

Journal:

Metals and Materials International

Year:

2013

Language:

english

File:

PDF, 591 KB

english, 2013

82

Investigation on the lasing characteristics of InAs/InGaAsP quantum dots with additional confinement structures

Jo, Byounggu, Lee, Cheul-Ro, Kim, Jin Soo, Han, Won Seok, Song, Jung Ho, Leem, Jae-Young, Noh, Sam Kyu, Ryou, Jae-Hyun, Dupuis, Russell D.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 1.81 MB

english, 2014

83

Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate

Lee, Seung-Jae, Bak, Gyu Hyeong, Jeon, Seong-Ran, Lee, Sang Hern, Kim, Sang-Mook, Jung, Sung Hoon, Lee, Cheul-Ro, Lee, In-Hwan, Leem, Shi-Jong, Baek, Jong Hyeob

Journal:

Japanese Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 481 KB

english, 2008

84

Development of gold induced surface plasmon enhanced CIGS absorption layer on polyimide substrate

Park, Seong-Un, Sharma, Rahul, Sim, Jae-Kwan, Baek, Byung Joon, Ahn, Haeng-Kwun, Kim, Jin Soo, Lee, Cheul-Ro

Journal:

Applied Surface Science

Year:

2013

Language:

english

File:

PDF, 2.97 MB

english, 2013

85

Spatial emission distribution of InGaN/GaN light-emitting diodes depending on the pattern structures

Lee, Kwanjae, Lee, Hyunjung, Lee, Cheul-Ro, Kim, Jin Soo, Lee, Jin Hong, Ryu, Mee-Yi, Leem, Jae-Young

Journal:

Materials Research Bulletin

Year:

2014

Language:

english

File:

PDF, 1.63 MB

english, 2014

86

Single Nanowire Light-Emitting Diodes Using Uniaxial and Coaxial InGaN/GaN Multiple Quantum Wells Synthesized by Metalorganic Chemical Vapor Deposition

Ra, Yong-Ho, Navamathavan, Rangaswamy, Yoo, Hee-Il, Lee, Cheul-Ro

Journal:

Year:

2014

Language:

english

File:

PDF, 4.82 MB

english, 2014

87

High-Quality Uniaxial In x Ga 1– x N/GaN Multiple Quantum Well (MQW) Nanowires (NWs) on Si(111) Grown by Metal-Organic Chemical Vapor Deposition (MOCVD) and Light-Emitting Diode (LED) Fabrication

Ra, Yong-Ho, Navamathavan, R., Park, Ji-Hyeon, Lee, Cheul-Ro

Journal:

ACS Applied Materials & Interfaces

Year:

2013

Language:

english

File:

PDF, 4.92 MB

english, 2013

88

Effects of a thin (In)GaAs layer on the structural and optical properties of InAs∕InAlGaAs quantum dots

Kim, Jin Soo, Yang, Youngsin, Lee, Cheul-Ro, Lee, In Hwan, Yu, Yeon Tae, Ahn, Haeng Keun, Seol, Kyeong Won, Kim, Jong Su, Leem, Jae-Young, Ryu, Mee-Yi

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 744 KB

english, 2007

89

Formation characteristics of shape-engineered InAs/InAlGaAs quantum dots grown on InP substrates

Kim, Jin Soo, Lee, Cheul-Ro, Lee, In Hwan, Leem, Jae-Young, Kim, Jong Su, Ryu, Mee-Yi

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 736 KB

english, 2007

90

Characteristic Comparison of GaN Grown on Patterned Sapphire Substrates Following Growth Time

Kang, Dong-Hun, Song, Jae-Chul, Shim, Byung-Young, Ko, Eun-A, Kim, Dong-Wook, Kannappan, Santhakumar, Lee, Cheul-Ro

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 284 KB

english, 2007

91

Non-polar InGaN quantum dots grown on the m-plane of n-GaN nanowires by a self-catalyst method using metal organic chemical vapor deposition

Yoo, Hee-Il, Ra, Yong-Ho, Navamathavan, R., Choi, Yong-Hyun, Park, Ji-Hyeon, Lee, Cheul-Ro

Journal:

Year:

2014

Language:

english

File:

PDF, 3.86 MB

english, 2014

92

Radial growth behavior and characteristics of m-plane In0.16Ga0.84N/GaN MQW nanowires by MOCVD

Ra, Yong-Ho, Navamathavan, R., Park, Ji-Hyeon, Lee, Cheul-Ro

Journal:

Year:

2013

Language:

english

File:

PDF, 1.16 MB

english, 2013

93

Different characteristics of InGaN/GaN multiple quantum well heterostructures grown on m- and r-planes of a single n-GaN nanowire using metalorganic chemical vapor deposition

Ra, Yong-Ho, Navamathavan, Rangaswamy, Kang, San, Lee, Cheul-Ro

Journal:

Journal of Materials Chemistry C

Year:

2014

Language:

english

File:

PDF, 2.80 MB

english, 2014

94

Vertically p–n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD

Park, Ji-Hyeon, Kim, Min-Hee, Kissinger, Suthan, Lee, Cheul-Ro

Journal:

Year:

2013

Language:

english

File:

PDF, 595 KB

english, 2013

95

Strong instantaneous contribution in femtosecond degenerate four-wave mixing from 350 μm InP due to virtual excitation

Yu, Sungkyu, Chu, Jang Hee, Lee, Joo In, Kim, Dongho, Yee, Y. H., Kim, D. S., Leem, Jae-Young, Lee, Cheul-Ro, Lee, Jong Hyun

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 319 KB

english, 1996

96

Vertical stacks of shape-engineered InAs∕InAlGaAs quantum dot and its influences on the lasing characteristics

Kim, Jin Soo, Lee, Cheul-Ro, Choi, Byung Seok, Kwack, Ho-Sang, Lee, Chul Wook, Sim, Eun Deok, Oh, Dae Kon

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 362 KB

english, 2007

97

High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer

Jo, Byounggu, Lee, Cheul-Ro, Kim, Jin Soo, Han, Won Seok, Song, Jung Ho, Choi, Jang-Hee, Ryou, Jae-Hyun, Lee, Jin Hong, Leem, Jae-Young

Journal:

Laser Physics Letters

Year:

2014

Language:

english

File:

PDF, 1018 KB

english, 2014

98

Se interlayer in CIGS absorption layer for solar cell devices

Lee, Seung-Kyu, Sim, Jae-Kwan, Kissinger, N.J. Suthan, Song, Il-Seok, Kim, Jin-Soo, Baek, Byung-Joon, Lee, Cheul-Ro

Journal:

Journal of Alloys and Compounds

Year:

2015

Language:

english

File:

PDF, 3.02 MB

english, 2015

99

Periodic variation in the electroluminescence intensity on a single pattern from InGaN/GaN light-emitting diodes fabricated on lens-shaped patterns

Oh, Hye Min, Lee, Cheul-Ro, Kim, Jin Soo, Pyun, Kihyun, Lee, Kwang Jae, Jeong, Mun Seok, Kim, Yong Hwan, Leem, Jae-Young, Ryou, Jae-Hyun

Journal:

Journal of the Korean Physical Society

Year:

2015

Language:

english

File:

PDF, 550 KB

english, 2015

100

Effect of H 2 Carrier Gas on the Growth of GaN Nanowires on Si(111) Substrates by Metalorganic Chemical Vapor Deposition

Ra, Yong-Ho, Navamathavan, Rangaswamy, Cha, Jun-Ho, Song, Ki-Young, Lim, Hong-Chul, Park, Ji-Hyeon, Kim, Dong-Wook, Lee, Cheul-Ro

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 376 KB

english, 2010

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