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51

High-voltage normally OFF GaN power transistors on SiC and Si substrates

Hilt, Oliver, Bahat-Treidel, Eldad, Knauer, Arne, Brunner, Frank, Zhytnytska, Rimma, Würfl, Joachim

Journal:

Year:

2015

Language:

english

File:

PDF, 1.09 MB

english, 2015

52

GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues

Meneghesso, G., Meneghini, M., Bisi, D., Silvestri, R., Zanandrea, A., Hilt, O., Bahat-Treidel, E., Brunner, F., Knauer, A., Wuerfl, J., Zanoni, E.

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 1.70 MB

english, 2013

53

Hiding the Higgs at the LHC

Bahat-Treidel, Omri, Grossman, Yuval, Rozen, Yoram

Journal:

Journal of High Energy Physics

Year:

2007

Language:

english

File:

PDF, 162 KB

english, 2007

54

The Ir(relevance) of Initial Conditions in Soft Leptogenesis

Bahat-Treidel, Omri, Surujon, Ze'ev

Journal:

Journal of High Energy Physics

Year:

2008

Language:

english

File:

PDF, 201 KB

english, 2008

55

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

Meneghini, M., Hilt, O., Fleury, C., Silvestri, R., Capriotti, M., Strasser, G., Pogany, D., Bahat-Treidel, E., Brunner, F., Knauer, A., Würfl, J., Rossetto, I., Zanoni, E., Meneghesso, G., Dalcanale,

Journal:

Microelectronics Reliability

Year:

2015

Language:

english

File:

PDF, 3.56 MB

english, 2015

56

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - (Invited) High Voltage Normally-Off Transistors and Efficient Schottky Diodes based on GaN Technology

Wuerfl, Joachim, Bahat-Treidel, Eldad, Brunner, Frank, Cho, M., Hilt, Oliver, Knauer, Arne, Kotara, Przemyslaw, Weyers, Markus, Zhytnytska, Rimma

Year:

2011

Language:

english

File:

PDF, 2.08 MB

english, 2011

57

[IEEE ESSDERC 2015 - 45th European Solid-State Device Research Conference - Graz, Austria (2015.9.14-2015.9.18)] 2015 45th European Solid State Device Research Conference (ESSDERC) - E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator

Capriotti, Mattia, Fleury, Clement, Bethge, Ole, Rigato, Matteo, Lancaster, Suzanne, Pogany, Dionyz, Strasser, Gottfried, Bahat-Treidel, Eldad, Brunner, Oliver Hilt Frank, Wurfl, Joachim

Year:

2015

Language:

english

File:

PDF, 1.11 MB

english, 2015

58

SPIE Proceedings [SPIE Optics & Photonics 2005 - San Diego, California, USA (Sunday 31 July 2005)] Free-Space Laser Communications V - Electro-optical wide-angle beam deflection based on transversal-field-induced refractive inhomogeneity in a liquid crystal layer

Voelz, David G., Apter, Boris, Bahat-Treidel, Eldad, Ricklin, Jennifer C., Efron, Uzi

Year:

2005

Language:

english

File:

PDF, 1.01 MB

english, 2005

59

Investigation of the Dynamic On-State Resistance of 600V Normally-off and Normally-on GaN HEMTs

Badawi, Nasser, Boecker, Jan, Hilt, Oliver, Bahat-Treidel, Eldad, Wuerfl, Hans-Joachim, Dieckerhoff, Sibylle

Journal:

IEEE Transactions on Industry Applications

Year:

2016

Language:

english

File:

PDF, 4.08 MB

english, 2016

60

SPIE Proceedings [SPIE Optics & Photonics 2005 - San Diego, California, USA (Sunday 31 July 2005)] Liquid Crystals IX - Studies of fringing field effects in liquid crystal beam-steering devices

Efron, Uzi, Khoo, Iam-Choon, Apter, Boris, Bahat-Treidel, Eldad

Year:

2005

Language:

english

File:

PDF, 473 KB

english, 2005

61

[OSA Quantum Electronics and Laser Science Conference - San Jose, CA (2010..-..)] Conference on Lasers and Electro-Optics 2010 - Breaking of Dirac Dynamics Due to Nonlinear Interactions

Bahat-Treidel, Omri, Peleg, Or, Segev, Mordechai

Year:

2010

Language:

english

File:

PDF, 315 KB

english, 2010

62

[OSA Quantum Electronics and Laser Science Conference - Baltimore, Maryland (2011..-..)] CLEO:2011 - Laser Applications to Photonic Applications - Optical tachyons, broken PT-symmetry, and strain effects in photonic graphene

Szameit, Alexander, Rechtsman, Mikael C., Bahat-Treidel, Omri, Segev, Moti

Year:

2011

Language:

english

File:

PDF, 254 KB

english, 2011

63

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Ťapajna, M., Hilt, O., Bahat-Treidel, E., Würfl, J., Kuzmík, J.

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 1.81 MB

english, 2015

64

[IEEE 2018 International Power Electronics Conference (IPEC-Niigata 2018 –ECCE Asia) - Niigata, Japan (2018.5.20-2018.5.24)] 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) - Dynamic drift effects in GaN power transistors: Correlation to device technology and mission profile

Wurfl, Joachim, Bahat-Treidel, Eldad, Hilt, Oliver, Troppenz, Maria, Wolf, Mihaela, Bocker, Jan, Kuring, Carsten, Dieckerhoff, Sibylle

Year:

2018

Language:

english

File:

PDF, 1.01 MB

english, 2018

65

Dispersion effects in on-state resistance of lateral Ga2O3 MOSFETs at 300 V switching

BÃ¶cker, J., Tetzner, K., Heucke, S., Hilt, O., Bahat-Treidel, E., Dieckerhoff, S., WÃ¼rfl, J.

Journal:

Electronics Letters

Year:

2020

File:

PDF, 569 KB

2020

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