Loualiche, S: search on Z-Library

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101

Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering

W. Guo, A. Bondi, C. Cornet, A. Létoublon, O. Durand, T. Rohel, S. Boyer-Richard, N. Bertru, S. Loualiche, J. Even, A. Le Corre

Journal:

Applied Surface Science

Year:

2012

Language:

english

File:

PDF, 859 KB

english, 2012

102

Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)

FreÌchengues, S., Drouot, V., Lambert, B., Lemoine, D., Loualiche, S., Le Corre, A., LâHaridon, H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 498 KB

english, 1997

103

[IEEE Communication Technologies: from Theory to Applications (ICTTA) - Damascus, Syria (2008.04.7-2008.04.11)] 2008 3rd International Conference on Information and Communication Technologies: From Theory to Applications - Negative Characteristic Temperature of Long Wavelength InAs/AlGaInAs Quantum Dot Laser Grown on InP Substrates

Alghoraibi, I., Rohel, T., Piron, R., Bertru, N., Paranthoen, C., Elias, G., Nakkar, A., Folliot, H., Le Corre, A., Loualiche, S.

Year:

2008

Language:

english

File:

PDF, 475 KB

english, 2008

104

Structural and electronic properties of BAs and BxGa1−xAs, BxIn1−xAs alloys

N. Chimot, J. Even, H. Folliot, S. Loualiche

Journal:

Physica B: Condensed Matter

Year:

2005

Language:

english

File:

PDF, 279 KB

english, 2005

105

Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates

P. Caroff, N. Bertru, C. Platz, O. Dehaese, A. Le Corre, S. Loualiche

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 229 KB

english, 2005

106

Design and Fabrication of GaInAsP/InP VCSEL with Two a-Si/a-SiNxBragg Reflectors

C. Levallois, A. Le Corre, O. Dehaese, H. Folliot, C. Paranthoen, C. Labbé, S. Loualiche

Journal:

Optical and Quantum Electronics

Year:

2006

Language:

english

File:

PDF, 378 KB

english, 2006

107

Modelling of the two-state lasing and the turn-on delay in 1.55 μm InAs/InP (113)B quantum dot lasers

Veselinov, K., Grillot, F., Bekiarski, A., Loualiche, S.

Journal:

IEE Proceedings - Optoelectronics

Year:

2006

Language:

english

File:

PDF, 317 KB

english, 2006

108

Demonstration of a Low Threshold Current in 1.54 µm InAs/InP(311)B Quantum Dot Laser with Reduced Quantum Dot Stacks

Homeyer, Estelle, Piron, Rozenn, Grillot, Frédéric, Dehaese, Olivier, Tavernier, Karine, Macé, Erwan, Even, Jacky, Le Corre, Alain, Loualiche, Slimane

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 123 KB

english, 2007

109

Electro-optic microwave measurements in the frequency domain

S. Loualiche, F. Clerot

Year:

1992

Language:

english

File:

PDF, 583 KB

english, 1992

110

Schottky diode and field-effect transistor on InP

Loualiche, S., Ginoudi, A., L’Haridon, H., Salvi, M., Le Corre, A., Lecrosnier, D., Favennec, P. N.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 421 KB

english, 1989

111

Spectral Analysis of 1.55-m InAs–InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model

Grillot, F., Veselinov, K., Gioannini, M., Montrosset, I., Even, J., Piron, R., Homeyer, E., Loualiche, S.

Journal:

IEEE Journal of Quantum Electronics

Year:

2009

Language:

english

File:

PDF, 368 KB

english, 2009

112

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

Paranthoen, C., Bertru, N., Dehaese, O., Le Corre, A., Loualiche, S., Lambert, B., Patriarche, G.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 469 KB

english, 2001

113

High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5 -

Lambert, B, Corre, A Le, Drouot, V, L'Haridon, H, Loualiche, S

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 81 KB

english, 1998

114

290 fs switching time of Fe-doped quantum well saturable absorbers in a microcavity in 1.55 μm range

M. Gicquel-guézo, S. Loualiche, J. Even, C. Labbé, O. Dehaese, A. Le Corre, H. Folliot, Y. Pellan

Year:

2004

Language:

english

File:

PDF, 371 KB

english, 2004

115

Exact analytical solutions describing quantum dot, ring and wire wavefunctions

Even, J, Loualiche, S

Journal:

Journal of Physics A: Mathematical and General Physics

Year:

2004

Language:

english

File:

PDF, 140 KB

english, 2004

116

[AIP PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006 - Vienna (Austria) (24-28 July 2006)] AIP Conference Proceedings - Theory and experiment of InAs/InP quantum dots: from calculations to laser emission

Cornet, C., Hayne, M., Schliwa, A., Doré, F., Labbé, C., Folliot, H., Even, J., Bimberg, D., Moshchalkov, V. V., Loualiche, S.

Year:

2007

Language:

english

File:

PDF, 2.66 MB

english, 2007

117

High-sensitivity sampling technique for luminescence time constant measurement

Loualiche, S., Pauty, E.

Journal:

Electronics Letters

Year:

1987

Language:

english

File:

PDF, 430 KB

english, 1987

118

Ultra-fast quantum-well saturable absorber devices and their application to all-optical regeneration of telecommunication optical signals

Jean -Louis Oudar, Guy Aubin, Juliette Mangeney, Slimane Loualiche, Jean -Claude Simon, Alexandre Shen, Olivier Leclerc

Journal:

annals of telecommunications - annales des télécommunications

Year:

2003

Language:

english

File:

PDF, 2.65 MB

english, 2003

119

Optical Feedback Tolerance of Quantum-Dot- and Quantum-Dash-Based Semiconductor Lasers Operating at 1.55 m

Azouigui, S., Dagens, B., Lelarge, F., Provost, J.-G., Make, D., Le Gouezigou, O., Accard, A., Martinez, A., Merghem, K., Grillot, F., Dehaese, O., Piron, R., Loualiche, S., Qin Zou, Ramdane, A.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

2009

Language:

english

File:

PDF, 680 KB

english, 2009

120

Structural and optical properties of AlInAs/InP and GaPSb/InP type II interfaces

Sacilotti, M., Abraham, P., Pitaval, M., Ambri, M., Benyattou, T., Tabata, A., Perez, M. A. Garcia, Motisuke, P., Landers, R., Morais, J., Corre, A. Le, Loualiche, S.

Journal:

Canadian Journal of Physics

Year:

1996

File:

PDF, 458 KB

1996

121

Enhanced Properties in Single-Walled Carbon Nanotubes Based Saturable Absorber for All Optical Signal Regeneration

H. Nong, M. Gicquel-guézo, L. Bramerie, M. Perrin, F. Grillot, R. Fleurier, B. Liang, D. L. Huffaker, C. Levallois, J. L. Pouliquen, A. L. Corre, O. Dehaese, S. Loualiche

Year:

2011

Language:

english

File:

PDF, 278 KB

english, 2011

122

Temperature and pressure dependence of the recombination processes in 1.5 μm InAs∕InP (311)B quantum dot lasers

Massé, N. F., Homeyer, E., Marko, I. P., Adams, A. R., Sweeney, S. J., Dehaese, O., Piron, R., Grillot, F., Loualiche, S.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 291 KB

english, 2007

123

[IEEE 2013 25th International Conference on Indium Phosphide and Related Materials (IPRM) - Kobe, Japan (2013.05.19-2013.05.23)] 2013 International Conference on Indium Phosphide and Related Materials (IPRM) - InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

Klaime, K., Calo, C., Piron, R., Paranthoen, C., Thiam, D., Batte, T., Dehaese, O., Le Pouliquen, J., Loualiche, S., Le Corre, A., Merghem, K, Martinez, A., Ramdane, A.

Year:

2013

Language:

english

File:

PDF, 638 KB

english, 2013

124

[IEEE Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) - Davos, Switzerland (16-20 May 1999)] Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) - Achievement of vertically stacked InAs quantum dots on InP emitting at 1.55 μm

Frechenges, S., Bertru, N., Drouot, V., Dehaese, O., Loualiche, S., Lambert, B.

Year:

1999

Language:

english

File:

PDF, 226 KB

english, 1999

125

Schottky and field-effect transistor fabrication on InP and GaInAs

Loualiche, S., L’Haridon, H., Le Corre, A., Lecrosnier, D., Salvi, M., Favennec, P. N.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 492 KB

english, 1988

126

T313M PINK1 Mutation in an Extended Highly Consanguineous Saudi Family With Early-Onset Parkinson Disease

Chishti, Muhammad A., Bohlega, Saeed, Ahmed, Maqbool, Loualich, Arslan, Carroll, Pamela, Sato, Christine, St George-Hyslop, Peter, Westaway, David, Rogaeva, Ekaterina

Journal:

Archives of Neurology

Year:

2006

Language:

english

File:

PDF, 103 KB

english, 2006

127

a-Si:H Schottky gate on n-GaInAs

Loualiche, S., Vaudry, C., Henry, L., Le Corre, A.

Journal:

Electronics Letters

Year:

1986

Language:

english

File:

PDF, 451 KB

english, 1986

128

Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µm

E. Homeyer, R. Piron, P. Caroff, C. Paranthoen, O. Dehaese, A. Le Corre, S. Loualiche

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 295 KB

english, 2006

129

Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers

D. Zhou, R. Piron, M. Dontabactouny, E. Homeyer, O. Dehaese, T. Batte, M. Gicquel, F. Grillot, K. Tavernier, J. Even, S. Loualiche

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 273 KB

english, 2009

130

Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells

Guézo, M., Loualiche, S., Even, J., Le Corre, A., Dehaese, O., Pellan, Y., Marceaux, A.

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 316 KB

english, 2003

131

A theoretical model for quantum nanostructures electronic wave functions, magnetic field effects

J. Even, C. Cornet, S. Loualiche

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2005

Language:

english

File:

PDF, 267 KB

english, 2005

132

Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber

J.-B. Lecourt, G. Martel, M. Guézo, C. Labbé, S. Loualiche

Journal:

Optics Communications

Year:

2006

Language:

english

File:

PDF, 591 KB

english, 2006

133

Dynamic properties of InAs∕InP (311)B quantum dot Fabry–Perot lasers emitting at 1.52 μm

Martinez, A., Merghem, K., Bouchoule, S., Moreau, G., Ramdane, A., Provost, J.-G., Alexandre, F., Grillot, F., Dehaese, O., Piron, R., Loualiche, S.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 469 KB

english, 2008

134

Optical properties and morphology of InAs∕InP (113)B surface quantum dots

A. Nakkar, H. Folliot, A. Le Corre, F. Doré, I. Alghoraibi, C. Labbé, G. Elias, S. Loualiche, M. Pistol, P. Caroff, C. Ellström

Year:

2008

Language:

english

File:

PDF, 566 KB

english, 2008

135

[IEEE Third International Conference Indium Phosphide and Related Materials - Cardiff, UK (8-11 April 1991)] [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials - Influence of the well composition and thickness in the GaInP/InP/GaInAs/InP structure for HEMT

Loualiche, S., Le Corre, A., Salaun, S., Durel, S., Lecrosnier, D., Guillemot, C., Vaudry, C., Henry, L.

Year:

1991

Language:

english

File:

PDF, 301 KB

english, 1991

136

Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5 μm on InP(3 1 1)B substrates

P. Caroff, C. Platz, O. Dehaese, C. Paranthoën, N. Bertru, A. Le Corre, S. Loualiche

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 218 KB

english, 2005

137

substrates: Theory and experiment

Cornet, C., Schliwa, A., Even, J., Doré, F., Celebi, C., Létoublon, A., Macé, E., Paranthoën, C., Simon, A., Koenraad, P. M., Bertru, N., Bimberg, D., Loualiche, S.

Journal:

Physical Review B

Year:

2006

Language:

english

File:

PDF, 714 KB

english, 2006

138

Low threshold current density of InAs quantum dash laser on InP (100) through optimizing double cap technique

Zhou, D., Piron, R., Dontabactouny, M., Dehaese, O., Grillot, F., Batte, T., Tavernier, K., Even, J., Loualiche, S.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 419 KB

english, 2009

139

Theoretical discussion of deep level optical and thermal spectroscopy in semiconductors: Application to E1 and E2 in GaAs

S. Loualiche, A. Nouailhat, M. Lannoo

Journal:

Solid State Communications

Year:

1984

Language:

english

File:

PDF, 338 KB

english, 1984

140

Formation of InAs islands on InP(3 1 1)B surface by molecular beam epitaxy

C. Paranthoen, N. Bertru, C. Platz, P. Caroff, O. Dehaese, H. Folliot, A. Le Corre, S. Loualiche

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 206 KB

english, 2003

141

Theoretical Model for Radiation Enhanced Diffusion and Redistribution of Impurities. Comparison with Experiments

S. Loualiche, C. Lucas, P. Baruch, J. P. Gailliard, J. C. Pfister

Journal:

physica status solidi (a)

Year:

1982

Language:

english

File:

PDF, 814 KB

english, 1982

142

Carrier Dynamics and Saturation Effect in (113)B InAs/InP Quantum Dot Lasers

K. Veselinov, F. Grillot, P. Miska, E. Homeyer, P. Caroff, C. Platz, J. Even, X. Marie, O. Dehaese, S. Loualiche, A. Ramdane

Journal:

Optical and Quantum Electronics

Year:

2006

Language:

english

File:

PDF, 224 KB

english, 2006

143

Analysis of the Double Laser Emission Occurring in 1.55-μm InAs–InP (113)B Quantum-Dot Lasers

Veselinov, K., Grillot, F., Cornet, C., Even, J., Bekiarski, A., Gioannini, M., Loualiche, S.

Journal:

IEEE Journal of Quantum Electronics

Year:

2007

Language:

english

File:

PDF, 607 KB

english, 2007

144

[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - InAs quantum wires on InP substrate for VCSEL applications

Lamy, J. M., Paranthoen, C., Levallois, C., Nakkar, A., Folliot, H., Dehaese, O., Le Corre, A., Loualiche, S., Castany, O., Dupont, L.

Year:

2008

Language:

english

File:

PDF, 403 KB

english, 2008

145

GaPSb: A new ternary material for Schottky diode fabrication on InP

Loualiche, S., Le Corre, A., Salaun, S., Caulet, J., Lambert, B., Gauneau, M., Lecrosnier, D., Deveaud, B.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 489 KB

english, 1991

146

[AIP PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006 - Vienna (Austria) (24-28 July 2006)] AIP Conference Proceedings - A theoretical and experimental study of λ>2 μm luminescence of quantum dots on InP substrate

Doré, F., Even, J., Cornet, C., Schliwa, A., Bertru, N., Dehaese, O., Alghoraibi, I., Folliot, H., Piron, R., Le Corre, A., Loualiche, S.

Year:

2007

Language:

english

File:

PDF, 998 KB

english, 2007

147

Achievement of High Density InAs Quantum Dots on InP (311)B Substrate Emitting at 1.55 µm

Caroff, P., Bertru, N., Le Corre, A., Dehaese, O., Rohel, T., Alghoraibi, I., Folliot, H., Loualiche, S.

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 186 KB

english, 2005

148

Electron irradiation effects in p-type GaAs

Journal:

Journal of Applied Physics

Year:

1982

Language:

english

File:

PDF, 643 KB

english, 1982

149

[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - Threshold current density and emitting wavelength evolution with stack number in InAs quantum dash lasers at 1.55 μm

Zhou, Dayong, Piron, Rozenn, Grillot, Frederic, Dehaese, Olivier, Homeyer, Estelle, Batte, Thomas, Tavernier, Karine, Mace, Erwan, Even, Jacky, Le Corre, Alain, Loualiche, Slimane

Year:

2008

File:

PDF, 129 KB

2008

150

Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP

Folliot, H., Loualiche, S., Lambert, B., Drouot, V., Le Corre, A.

Journal:

Physical Review B

Year:

1998

Language:

english

File:

PDF, 77 KB

english, 1998

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