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1

Modeling of Threading Dislocation Density Reduction in Porous III-Nitride Layers

Artemiev, Dmitry M., Orlova, Tatiana S., Bougrov, Vladislav E., Odnoblyudov, Maxim A., Romanov, Alexei E.

Journal:

Journal of Electronic Materials

Year:

2015

Language:

english

File:

PDF, 346 KB

english, 2015

2

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

P.T. Törmä, O. Svensk, M. Ali, S. Suihkonen, M. Sopanen, M.A. Odnoblyudov, V.E. Bougrov

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 620 KB

english, 2008

3

Dislocations at the interface between sapphire and GaN

A. Lankinen, T. Lang, S. Suihkonen, O. Svensk, A. Säynätjoki, T. O. Tuomi, P. J. McNally, M. Odnoblyudov, V. Bougrov, A. N. Danilewsky, P. Bergman, R. Simon

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2008

Language:

english

File:

PDF, 463 KB

english, 2008

4

Ce3+:YAG doped glass-ceramics for white light-emitting diode

Shvaleva, Maria A., Nikulina, Lidiya A., Aseev, Vladimir A., Mynbaev, Karim D., Bougrov, Vladislav E., Kovsh, Alexey R., Odnoblyudov, Maxim A., Nikonorov, Nikolay V., Romanov, Alexey E.

Journal:

Year:

2014

Language:

english

File:

PDF, 867 KB

english, 2014

5

Increasing the light-output efficiency from chip-on-board LED modules

Lipnitskaya, S. N., Bugrov, V. E., Kovsh, A. R., Odnoblyudov, M. A., Mynbaev, K. D., Nikulina, L. A., Romanov, A. E.

Journal:

Journal of Optical Technology

Year:

2013

Language:

english

File:

PDF, 763 KB

english, 2013

6

Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

Anderson, Travis J., Koehler, Andrew D., Tadjer, Marko J., Hite, Jennifer K., Nath, Anindya, Mahadik, Nadeemullah A., Aktas, Ozgur, Odnoblyudov, Vladimir, Basceri, Cem, Hobart, Karl D., Kub, Francis J

Journal:

Applied Physics Express

Year:

2017

Language:

english

File:

PDF, 2.00 MB

english, 2017

7

[IEEE 2017 Conference on Lasers and Electro-Optics Europe (CLEO/Europe) & European Quantum Electronics Conference (EQEC) - Munich (2017.6.25-2017.6.29)] 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Ultrafast picosecond MOPA With Yb-doped tapered double clad fiber

Noronen, Teppo, Gumenyuk, Regina, Chamorovskii, Yuri, Golant, Konstantin, Odnoblyudov, Maxim, Filippov, Valery

Year:

2017

Language:

english

File:

PDF, 231 KB

english, 2017

8

Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates

Li, Xiangdong, Geens, Karen, Wellekens, Dirk, Zhao, Ming, Magnani, Alessandro, Amirifar, Nooshin, Bakeroot, Benoit, You, Shuzhen, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Odnoblyudov, Vlad, Aktas,

Journal:

IEEE Transactions on Semiconductor Manufacturing

Year:

2020

File:

PDF, 2.55 MB

2020

9

Harmonic mode-locking fiber ring laser with a pulse repetition rate up to 12Â GHz

Korobko, D.A., Stoliarov, D.A., Itrin, P.A., Odnoblyudov, M.A., Petrov, A.B., Gumenyuk, R.V.

Journal:

Optics & Laser Technology

Year:

2021

File:

PDF, 1.53 MB

2021

10

Picosecond Yb-doped tapered fiber laser system with 1.26Â MW peak power and 200Â W average output power

Petrov, Andrey, Odnoblyudov, Maxim, Gumenyuk, Regina, Minyonok, Lidiya, Chumachenko, Andrey, Filippov, Valery

Journal:

Scientific Reports

Year:

2020

File:

PDF, 2.99 MB

2020

11

Resonant States in Strained Semiconductors

M.A. Odnoblyudov, V.M. Chistyakov, I.N. Yassievich, M.S. Kagan

Journal:

physica status solidi (b)

Year:

1998

Language:

english

File:

PDF, 154 KB

english, 1998

12

Two-dimensional A+ states in boron doped SiGe quantum structures

I.N. Yassievich, K. Schmalz, M.A. Odnoblyudov, M.S. Kagan

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 261 KB

english, 1996

13

An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

P.T. Törmä, M. Ali, O. Svensk, S. Sintonen, P. Kostamo, S. Suihkonen, M. Sopanen, H. Lipsanen, M.A. Odnoblyudov, V.E. Bougrov

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 470 KB

english, 2009

14

MOCVD growth of GaN islands by multistep nucleation layer technique

T. Lang, M. Odnoblyudov, V. Bougrov, M. Sopanen

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 366 KB

english, 2005

15

Room-temperature yellow–amber emission from InGaP quantum wells grown on an InGaP metamorphic buffer layer on GaP(1 0 0) substrates

V.A. Odnoblyudov, C.W. Tu

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 381 KB

english, 2005

16

Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep technique

T. Lang, M. Odnoblyudov, V. Bougrov, S. Suihkonen, M. Sopanen, H. Lipsanen

Journal:

Journal of Crystal Growth

Year:

2006

Language:

english

File:

PDF, 522 KB

english, 2006

17

Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep technique

T. Lang, M.A. Odnoblyudov, V.E. Bougrov, S. Suihkonen, O. Svensk, P.T. Törmä, M. Sopanen, H. Lipsanen

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 574 KB

english, 2007

18

Effect of growth conditions on electrical properties of Mg-doped p-GaN

O. Svensk, S. Suihkonen, T. Lang, H. Lipsanen, M. Sopanen, M.A. Odnoblyudov, V.E. Bougrov

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 137 KB

english, 2007

19

The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency

S. Suihkonen, O. Svensk, T. Lang, H. Lipsanen, M.A. Odnoblyudov, V.E. Bougrov

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 190 KB

english, 2007

20

Self-assembled lateral Bi-quantum-dot molecule formation by gas-source molecular beam epitaxy

S. Suraprapapich, Y.M. Shen, V.A. Odnoblyudov, Y. Fainman, S. Panyakeow, C.W. Tu

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 706 KB

english, 2007

21

Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

S. Suihkonen, T. Lang, O. Svensk, J. Sormunen, P.T. Törmä, M. Sopanen, H. Lipsanen, M.A. Odnoblyudov, V.E. Bougrov

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 667 KB

english, 2007

22

Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer

O. Svensk, P.T. Törmä, S. Suihkonen, M. Ali, H. Lipsanen, M. Sopanen, M.A. Odnoblyudov, V.E. Bougrov

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 211 KB

english, 2008

23

Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

M. Ali, A.E. Romanov, S. Suihkonen, O. Svensk, P.T. Törmä, M. Sopanen, H. Lipsanen, M.A. Odnoblyudov, V.E. Bougrov

Journal:

Journal of Crystal Growth

Year:

2011

Language:

english

File:

PDF, 730 KB

english, 2011

24

Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures

I.V. Altukhov, E.G. Chirkova, V.P. Sinis, M.S. Kagan, R.T. Troeger, S.K. Ray, J. Kolodzey, A.A. Prokofiev, M.A. Odnoblyudov, I.N. Yassievich

Journal:

Physica B: Condensed Matter

Year:

2003

Language:

english

File:

PDF, 248 KB

english, 2003

25

Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs

P.T. Törmä, O. Svensk, M. Ali, S. Suihkonen, M. Sopanen, M.A. Odnoblyudov, V.E. Bougrov

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 345 KB

english, 2009

26

InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy

Victor M. Ustinov, Anton Yu. Egorov, Vladimir A. Odnoblyudov, Natalya V. Kryzhanovskaya, Yurii G. Musikhin, Andrey F. Tsatsul’nikov, Zhores I. Alferov

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 251 KB

english, 2003

27

Hole transport due to shallow acceptors along boron doped SiGe quantum wells

I.V Altukhov, M.S Kagan, V.P Sinis, S.G Thomas, K.L Wang, A Blom, M.O Odnoblyudov

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 1018 KB

english, 2000

28

Configuration interaction applied to resonant states in semiconductors and semiconductor nanostructures

I.N. Yassievich, A. Blom, A.A. Prokofiev, M.A. Odnoblyudov, K.-A. Chao

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 125 KB

english, 2001

29

Continuous stimulated terahertz emission due to intra-center population inversion in uniaxially strained germanium

I.V Altukhov, M.S Kagan, Yu.P Gousev, V.P Sinis, K.A Korolev, H.K Olsson, Yu.M Galperin, M.A Odnoblyudov, I.N Yassievich, K.-A Chao

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 86 KB

english, 1999

30

Threading dislocation density reduction in two-stage growth of GaN layers

V. E. Bougrov, M. A. Odnoblyudov, A. E. Romanov, T. Lang, O. V. Konstantinov

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 216 KB

english, 2006

31

Multistep method for threading dislocation density reduction in MOCVD grown GaN epilayers

T. Lang, M. A. Odnoblyudov, V. E. Bougrov, A. E. Romanov, S. Suihkonen, M. Sopanen, H. Lipsanen

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 137 KB

english, 2006

32

Resonant states in doped quantum wells

A. Blom, M.A. Odnoblyudov, I.N. Yassievich, K.A. Chao

Journal:

physica status solidi (b)

Year:

2003

Language:

english

File:

PDF, 80 KB

english, 2003

33

Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes

James Chamings, Sucheta Ahmed, Alfred R. Adams, Stephen J. Sweeney, Vladimir A. Odnoblyudov, Charles W. Tu, Bernardette Kunert, Wolfgang Stolz

Journal:

physica status solidi (b)

Year:

2009

Language:

english

File:

PDF, 353 KB

english, 2009

34

Study of composition control and capping of MOVPE grown InGaN/InxAlyGa1–x–yN MQW structures

M. Ali, S. Suihkonen, O. Svensk, P. T. Törmä, M. Sopanen, H. Lipsanen, M. A. Odnoblyudov, V. E. Bougrov

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 217 KB

english, 2008

35

Resonance acceptor states in uniaxially strained semiconductors

M. A. Odnoblyudov, A. A. Pakhomov, V. M. Chistyakov, I. N. Yassievich

Journal:

Year:

1997

Language:

english

File:

PDF, 160 KB

english, 1997

36

Calculation of the energy levels of shallow acceptors in uniaxially strained germanium

M. A. Odnoblyudov, V. M. Chistyakov

Journal:

Year:

1998

Language:

english

File:

PDF, 84 KB

english, 1998

37

Power conversion efficiency of quantum dot laser diodes

A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, N. A. Maleev, V. A. Odnoblyudov, V. M. Ustinov, Yu. M. Shernyakov, E. Yu. Kondrat’eva, D. A. Livshits, I. S. Tarasov, N. N. Ledentsov, P. S. Kop’ev, Zh. I. Al

Journal:

Year:

2000

Language:

english

File:

PDF, 63 KB

english, 2000

38

Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range

N. A. Maleev, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, D. A. Bedarev, B. V. Volovik, I. L. Krestnikov, I. N. Kayander, V. A. Odnoblyudov, A. A. Suvorova, A. F. Tsatsul’nikov, Yu. M. Sh

Journal:

Year:

2000

Language:

english

File:

PDF, 150 KB

english, 2000

39

Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy

V. A. Odnoblyudov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, E. S. Semenova, V. M. Ustinov

Journal:

Year:

2001

Language:

english

File:

PDF, 67 KB

english, 2001

40

The distribution function of hot charge carriers under conditions of resonance scattering

A. A. Prokof’ev, M. A. Odnoblyudov, I. N. Yassievich

Journal:

Year:

2001

Language:

english

File:

PDF, 102 KB

english, 2001

41

Resonant acceptor states in uniaxially strained semiconductors

M. A. Odnoblyudov, A. A. Prokofiev, I. N. Yassievich

Journal:

Journal of Experimental and Theoretical Physics

Year:

2002

Language:

english

File:

PDF, 122 KB

english, 2002

42

Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen

V. A. Odnoblyudov, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov

Journal:

Technical Physics Letters

Year:

2002

Language:

english

File:

PDF, 55 KB

english, 2002

43

Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates

V. A. Odnoblyudov, A. Yu. Egorov, N. V. Kryzhanovskaya, A. G. Gladyshev, V. V. Mamutin, A. F. Tsatsul’nikov, V. M. Ustinov

Journal:

Technical Physics Letters

Year:

2002

Language:

english

File:

PDF, 46 KB

english, 2002

44

Band-edge line-up in GaAs/GaAsN/InGaAs heterostructures

A. Yu. Egorov, V. A. Odnoblyudov, N. V. Krizhanovskaya, V. V. Mamutin, V. M. Ustinov

Journal:

Year:

2002

Language:

english

File:

PDF, 65 KB

english, 2002

45

Longwave generation in laser structures based on InGaAs(N) quantum wells on GaAs substrates

V. A. Odnoblyudov, A. Yu. Egorov, A. R. Kovsh, V. V. Mamutin, E. V. Nikitina, Yu. M. Shernyakov, M. V. Maksimov, V. M. Ustinov

Journal:

Technical Physics Letters

Year:

2003

Language:

english

File:

PDF, 36 KB

english, 2003

46

Lasing at 1.5 µm in quantum dot structures on GaAs substrates

A. E. Zhukov, A. P. Vasil’yev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, A. Yu. Egorov, V. A. Odnoblyudov, N. A. Maleev, E. V. Nikitina, N. V. Kryjanovskaya, A. G. Gladyshev, Yu. M. Shernyakov, M. V

Journal:

Year:

2003

Language:

english

File:

PDF, 63 KB

english, 2003

47

Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy

I. P. Soshnikov, N. V. Kryzhanovskaya, N. N. Ledentsov, A. Yu. Egorov, V. V. Mamutin, V. A. Odnoblyudov, V. M. Ustinov, O. M. Gorbenko, H. Kirmse, W. Neumann, D. Bimberg

Journal:

Year:

2004

Language:

english

File:

PDF, 205 KB

english, 2004

48

Low-threshold 1.3-µm injection lasers based on single InGaAsN quantum wells

V. A. Odnoblyudov, A. Yu. Egorov, M. M. Kulagina, N. A. Maleev, Yu. M. Shernyakov, E. V. Nikitina, V. M. Ustinov

Journal:

Year:

2004

Language:

english

File:

PDF, 51 KB

english, 2004

49

Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium

I. V. Altukhov, M. S. Kagan, K. A. Korolev, V. P. Sinis, E. G. Chirkova, M. A. Odnoblyudov, I. N. Yassievich

Journal:

Journal of Experimental and Theoretical Physics

Year:

1999

Language:

english

File:

PDF, 134 KB

english, 1999

50

TEM study of the structure of gallium nitride epitaxial films grown on substrates with different interface morphologies

A. A. Sitnikova, S. G. Konnikov, D. A. Kirilenko, M. G. Mynbaeva, M. A. Odnoblyudov, V. E. Bugrov, T. Lang

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Year:

2007

Language:

english

File:

PDF, 426 KB

english, 2007

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