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51

O2/K/Ge(100) 2 × 1 and O2/Cs/Ge(100) 2 × 1: puzzling behavior of K and Cs in the oxidation of germanium

K.M. Schirm, P. Soukiassian, Y. Borensztein, S. Nishigaki, G.S. Dong, J.E. Bonnet, K. Hricovini

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 426 KB

english, 1993

52

Synchrotron radiation study of Rb/p-GaSb(110) interface formation and band bending at low temperature

J.J. Bonnet, L. Soonckindt, K.M. Schirm, S. Nishigaki, K. Hricovini, J.E. Bonnet, P. Soukiassian

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 427 KB

english, 1993

53

Photon- and catalysis-assisted silicon oxynitridation at room temperature: a comparative study

A. Glachant, P. Soukiassian

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 521 KB

english, 1993

54

Theoretical and experimental study of the Na/Si(100)2 x 1 surface structure

L. Spiess, Shao-Ping Tang, A.J. Freeman, B. Delley, P.S. Mangat, K.M. Schirm, Z. Hurych, P. Soukiassian

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 638 KB

english, 1993

55

O 1s investigation of SiO2/Si interface formation using an alkali metal promoter

M. Riehl-Chudoba, S. Nishigaki, Y. Huttel, F. Sèmond, Ph. Brun, P. Soukiassian

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 622 KB

english, 1993

56

Electronic promotion of silicon oxynitridation at room temperature by alkali-metal catalysts

A. Glachant, P. Soukiassian, S.T. Kim, Z. Hurych

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 603 KB

english, 1993

57

Structural properties of Na adsorbed on a Ge(100)2 × 1 surface: all electron, ab initio, density functional, cluster calculations

L. Spiess, E. Wimmer, P. Soukiassian

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 386 KB

english, 1996

58

HREELS study of subsurface oxygen on the Ni(100) surface

M. Oehlers, Th. Vinchon, J. Szeftel, P. Soukiassian

Journal:

Journal of Electron Spectroscopy and Related Phenomena

Year:

1993

Language:

english

File:

PDF, 899 KB

english, 1993

59

A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

V.M. Aroutiounian, G.A. Avetisyan, V.V. Buniatyan, P.G. Soukiassian, Vaz.V. Buniatyan

Journal:

Applied Surface Science

Year:

2006

Language:

english

File:

PDF, 198 KB

english, 2006

60

Silicon carbide surface oxidation and SiO2/SiC interface formation investigated by soft X-ray synchrotron radiation

P. Soukiassian, F. Amy

Journal:

Journal of Electron Spectroscopy and Related Phenomena

Year:

2005

Language:

english

File:

PDF, 321 KB

english, 2005

61

Computation of blowing-up solutions for second-order differential equations using re-scaling techniques

Nabil R. Nassif, Noha Makhoul-Karam, Yeran Soukiassian

Journal:

Journal of Computational and Applied Mathematics

Year:

2009

Language:

english

File:

PDF, 754 KB

english, 2009

62

Atomic scale engineering of nanostructures at silicon carbide surfaces

Patrick Soukiassian, Vincent Derycke, Fabrice Semond, Victor Yu. Aristov

Journal:

Microelectronics Journal

Year:

2005

Language:

english

File:

PDF, 669 KB

english, 2005

63

MgB2 thin films by hybrid physical–chemical vapor deposition

X.X. Xi, A.V. Pogrebnyakov, S.Y. Xu, K. Chen, Y. Cui, E.C. Maertz, C.G. Zhuang, Qi Li, D.R. Lamborn, J.M. Redwing, Z.K. Liu, A. Soukiassian, D.G. Schlom, X.J. Weng, E.C. Dickey, Y.B. Chen, W. Tian, X.

Journal:

Physica C: Superconductivity

Year:

2007

Language:

english

File:

PDF, 1.73 MB

english, 2007

64

Hydrogen sensitive gas sensor based on porous silicon/TiO2−x structure

V.M. Arakelyan, V.E. Galstyan, Kh.S. Martirosyan, G.E. Shahnazaryan, V.M. Aroutiounian, P.G. Soukiassian

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2007

Language:

english

File:

PDF, 166 KB

english, 2007

65

Silicon carbide TUNNETT diodes

V.V Buniatyan, V.M Aroutiounian, K Zekentes, N Camara, P Soukiassian

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 507 KB

english, 2004

66

Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface

V.M. Aroutiounian, K.M. Gambaryan, P. Soukiassian

Journal:

Surface Science

Year:

2010

Language:

english

File:

PDF, 1.43 MB

english, 2010

67

The adsorption of a substituted benzene, the ethynyl-trifluoro-toluene on Si(100)-2 × 1

Florian Herzog, Fabio Finocchi, Laetitia Soukiassian, Olivier Pluchery

Journal:

Surface Science

Year:

2011

Language:

english

File:

PDF, 1.16 MB

english, 2011

68

Nano-structures developing at the graphene/silicon carbide interface

S. Vizzini, H. Enriquez, S. Chiang, H. Oughaddou, P. Soukiassian

Journal:

Surface Science

Year:

2011

Language:

english

File:

PDF, 482 KB

english, 2011

69

Microwave characteristics of BARITT diodes based on silicon carbide

V.M. Aroutiounian, V.V. Buniatian, P. Soukiassian

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 241 KB

english, 1999

70

Atomic wire fabrication by STM induced hydrogen desorption

Laetitia Soukiassian, Andrew J. Mayne, Marilena Carbone, Gérald Dujardin

Journal:

Surface Science

Year:

2003

Language:

english

File:

PDF, 175 KB

english, 2003

71

Reconstruction of the Si-terminated β-SiC(100) surface

Laurent Pizzagalli, C Joachim, A Mayne, G Dujardin, F Semond, L Douillard, P Soukiassian

Journal:

Thin Solid Films

Year:

1998

Language:

english

File:

PDF, 319 KB

english, 1998

72

Self-organized 1D nanostructures on the β-SiC(100) surface: silicon atomic lines and dimer vacancy chains

V Derycke, Nga Phuong Pham, P Fonteneau, P Soukiassian, P Aboulet-Nze, Y Monteil, A.J Mayne, G Dujardin, J Gautier

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 919 KB

english, 2000

73

Photoemission measurements of quantum states in accumulation layers at narrow band gap III–V semiconductor surfaces

V.Yu. Aristov, V.M. Zhilin, C. Grupp, A. Taleb-Ibrahimi, H.J. Kim, P.S. Mangat, P. Soukiassian, G. Le Lay

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 215 KB

english, 2000

74

Scanning tunneling microscopy evidence of background contamination-induced 2×1 ordering of the β-SiC(100) c(4×2) surface

L. Douillard, O. Fauchoux, V. Aristov, P. Soukiassian

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 187 KB

english, 2000

75

Preface

J Bernardini, H Dallaporta, G Le Lay, P Soukiassian

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 20 KB

english, 2000

76

Sensitivity of p–n junction based on SiC doped with deep impurity acceptor levels

V.V. Buniatyan, F.V. Gasparyan, V.V. Aroutiounian, P. Soukiassian

Journal:

Applied Surface Science

Year:

2001

Language:

english

File:

PDF, 105 KB

english, 2001

77

Preface

B Aufray, J Bernardini, H Dallaporta, G Le Lay, P Soukiassian

Journal:

Applied Surface Science

Year:

2003

Language:

english

File:

PDF, 31 KB

english, 2003

78

Sb or Cs covered InAs(110) surfaces: moving EF into conduction band and quantized 2D electron channel

V.Yu. Aristov, M. Grehk, V.M. Zhilin, A. Taleb-Ibrahimi, G. Indlekofer, Z. Hurych, G. Le Lay, P. Soukiassian

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 414 KB

english, 1996

79

Synchrotron radiation study of Cs/carbon-rich β-SiC(100) and Cs/silicon-rich β-SiC(100) surfaces: metallization and interface formation

F. Semond, P. Soukiassian, P.S. Mangat, Z. Hurych, L. di Cioccio, C. Jaussaud

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 671 KB

english, 1996

80

Chemistry and electronic properties of metal contacts on an organic molecular semiconductor

Y. Hirose, C.I. Wu, V. Aristov, P. Soukiassian, A. Kahn

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 708 KB

english, 1997

81

Cubic silicon carbide surface reconstructions and Si (C) nanostructures at the atomic scale

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 1.84 MB

english, 2002

82

Atomic control of Si-terminated cubic silicon carbide (100) surfaces: morphology and self-organized atomic lines

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 3.64 MB

english, 1999

83

Behaviour of the 3C–SiC(100) c(2 × 2) (C-terminated) and 3 × 2 (Si-rich) surface reconstructions upon initial H2/CH4 microwave plasma exposures

M. Portail, S. Saada, S. Delclos, J. C. Arnault, P. Soukiassian, Ph. Bergonzo, Th. Chassagne, A. Leycuras

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 296 KB

english, 2005

84

Optical Constants and Electronic Structure of Crystalline and Amorphous As2S3 in the 3 to 35 eV Range

J. Perrin, J. Cazaux, P. Soukiassian

Journal:

physica status solidi (b)

Year:

1974

Language:

english

File:

PDF, 420 KB

english, 1974

85

Electronic Excitations (3 to 35 eV Range) in Some Layered III–VI Compounds: GaS, GaSe, and InSe

P. Soukiassian, J. Cazaux, J. Perrin

Journal:

physica status solidi (b)

Year:

1974

Language:

english

File:

PDF, 575 KB

english, 1974

86

Reflectance spectrum of diamond-like carbon/porous silicon double-layer antireflection coatings designed for silicon solar cells

V. M. Aroutiounian, Kh. S. Martirosyan, P. G. Soukiassian

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 119 KB

english, 2007

87

Engineering Cubic Silicon Carbide Surfaces Properties Using Hydrogen: Metallization versus Passivation

Journal:

Applied Physics A: Materials Science & Processing

Year:

2006

Language:

english

File:

PDF, 828 KB

english, 2006

88

Use of porous silicon for double- and triple-layer antireflection coatings in silicon photovoltaic converters

V. M. Aroutiounian, Kh. S. Martirosyan, A. S. Hovhannisyan, P. G. Soukiassian

Journal:

Journal of Contemporary Physics (Armenian Academy of Sciences)

Year:

2008

Language:

english

File:

PDF, 165 KB

english, 2008

89

Investigations of hydrogen sensors made of porous silicon

V.E. Galstyan, Kh.S. Martirosyan, V.M. Aroutiounian, V.M. Arakelyan, A.H. Arakelyan, P.G. Soukiassian

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 245 KB

english, 2008

90

1D electronic properties in temperature-induced c(4×2) to 2×1 transition on the β-SiC(100) surface

H Enriquez, V Derycke, V.Yu Aristov, P Soukiassian, G Le Lay, L di Cioccio, A Cricenti, C Croti, L Ferrari, P Perfetti

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 470 KB

english, 2000

91

Electrophysical and photoelectrical properties of UV-range injection structures made of silicon carbide

H.V. Asriyan, F.V. Gasparyan, V.M. Aroutiounian, P. Soukiassian

Journal:

Applied Surface Science

Year:

2001

Language:

english

File:

PDF, 114 KB

english, 2001

92

Carrier relaxation time divergence in single and double layer cuprates

M.L. Schneider, S. Rast, M. Onellion, J. Demsar, A.J. Taylor, Y. Glinka, N.H. Tolk, Y.H. Ren, G. Lüpke, A. Klimov, Y. Xu, R. Sobolewski, W. Si, X.H. Zeng, A. Soukiassian, X.X. Xi, M. Abrecht, D. Arios

Journal:

The European Physical Journal B / Condensed Matter and Complex Systems

Year:

2003

Language:

english

File:

PDF, 345 KB

english, 2003

93

Observation of electronic and atomic shell effects in gold nanowires

Mares, A., Otte, A., Soukiassian, L., Smit, R., van Ruitenbeek, J.

Journal:

Physical Review B

Year:

2004

Language:

english

File:

PDF, 106 KB

english, 2004

94

Epitaxial graphene: the material for graphene electronics

M. Sprinkle, P. Soukiassian, W. A. de Heer, C. Berger, E. H. Conrad

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2009

Language:

english

File:

PDF, 931 KB

english, 2009

95

Microwave characteristics of BARITT diodes based on silicon carbide

Aroutiounian, V.M., Buniatyan, V.V., Soukiassian, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 126 KB

english, 1999

96

Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA

Hirose, Y., Kahn, A., Aristov, V., Soukiassian, P., Bulovic, V., Forrest, S.

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 231 KB

english, 1996

97

Prediction of ferroelectricity in BaTiO3/SrTiO3 superlattices with domains

Li, Y. L., Hu, S. Y., Tenne, D., Soukiassian, A., Schlom, D. G., Xi, X. X., Choi, K. J., Eom, C. B., Saxena, A., Lookman, T., Jia, Q. X., Chen, L. Q.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 584 KB

english, 2007

98

The role of alkali-metal layers in the oxidation of Si and Ge surfaces: a comparative study

M. Riehl-Chudoba, K.M. Schirm, L. Surnev, P. Soukiassian

Journal:

Surface Science

Year:

1995

Language:

english

File:

PDF, 481 KB

english, 1995

99

Rbβ-SiC(100) surface and catalytic oxidation of the substrate

M. Riehl-Chudoba, S. Dupont, P. Soukiassian

Journal:

Surface Science

Year:

1995

Language:

english

File:

PDF, 442 KB

english, 1995

100

NaInAs(110) interface formation at RT

V.Yu. Aristov, P.S. Mangat, P. Soukiassian, G. Le Lay

Journal:

Surface Science

Year:

1995

Language:

english

File:

PDF, 346 KB

english, 1995