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51

A Taxonomical Note to the Section umbonatum of the genus PeridiniumEhrenberg, 1932 (Dinophyceae)

Jiří Popovský, Lois A. Pfiester

Journal:

Archiv für Protistenkunde

Year:

1986

Language:

english

File:

PDF, 560 KB

english, 1986

52

Species Composition and Diversity of Periphyton in the Grand River Dam Area, Mayes County, Oklahoma

Pfiester, Lois A., Lynch, Robert, Wright, Terry L.

Journal:

The Southwestern Naturalist

Year:

1979

Language:

english

File:

PDF, 1.08 MB

english, 1979

53

Heterothallism and thecal development in the sexual life history of Peridinium volzii (Dinophyceae)

Pfiester, Lois A., Skvarla, John J.

Journal:

Year:

1979

Language:

english

File:

PDF, 327 KB

english, 1979

54

Poly-gate sidewall oxidation induced submicrometer MOSFET degradation

Pfiester, J.R., Parrillo, L.C., Hayden, J.D., See, Y.-C., Fejes, P.

Journal:

IEEE Electron Device Letters

Year:

1989

Language:

english

File:

PDF, 320 KB

english, 1989

55

Surface topography and chemistry shape cellular behavior on wide band-gap semiconductors

Bain, Lauren E., Collazo, Ramon, Hsu, Shu-han, Latham, Nicole Pfiester, Manfra, Michael J., Ivanisevic, Albena

Journal:

Acta Biomaterialia

Year:

2014

Language:

english

File:

PDF, 3.98 MB

english, 2014

56

Permanent Staining of Rapid Frozen Section with Toluidine Blue

Büsing, C.M., Pfiester, P.

Journal:

Pathology - Research and Practice

Year:

1981

Language:

english

File:

PDF, 1.50 MB

english, 1981

57

Non-linear attenuation of gravity wind waves

Büsing, C.M., Pfiester, P.

Journal:

Deep Sea Research Part B. Oceanographic Literature Review

Year:

1986

Language:

english

File:

PDF, 88 KB

english, 1986

58

Morphology and Growth Habit of Terpsinoe musica Ehr. (Bacillariophyceae)

Mark R. Luttenton, Lois A. Pfiester and Peter Timpano

Journal:

Year:

1986

Language:

english

File:

PDF, 806 KB

english, 1986

59

Periodicity of Ceratium hirundinella (O. F. M.) Dujardin and Peridinium cinctum (O. F. M.) Ehrenberg in Relation to Certain Ecological Factors

Lois Ann Pfiester

Journal:

Year:

1971

Language:

english

File:

PDF, 872 KB

english, 1971

60

Ultrastructure of Fertilization in Peridinium cinctum

D. L. Spector, L. A. Pfiester and R. E. Triemer

Journal:

Year:

1981

Language:

english

File:

PDF, 567 KB

english, 1981

61

Sexual Reproduction of Hemidinium nasutum Alias Gloeodinium montanum

Lois A. Pfiester and Joe F. Highfill

Journal:

Transactions of the American Microscopical Society

Year:

1993

Language:

english

File:

PDF, 723 KB

english, 1993

62

Cell Layers of Hypnozygotes in Peridinium (Dinophyceae)

Peter Timpano and Lois A. Pfiester

Journal:

Transactions of the American Microscopical Society

Year:

1986

Language:

english

File:

PDF, 714 KB

english, 1986

63

A qualitative analysis of on-again/off-again romantic relationships: "It's up and down, all around"

Dailey, R. M., Rossetto, K. R., Pfiester, A., Surra, C. A.

Journal:

Journal of Social and Personal Relationships

Year:

2009

Language:

english

File:

PDF, 137 KB

english, 2009

64

Occurrence, Growth, and SEM Portrait of Woloszynskia reticulata Thompson (Dinophyceae)

Lois A. Pfiester, Robert A. Lynch and John J. Skvarla

Journal:

Transactions of the American Microscopical Society

Year:

1980

Language:

english

File:

PDF, 670 KB

english, 1980

65

Stable high temperature metamaterial emitters for thermophotovoltaic applications

Shemelya, Corey, DeMeo, Dante, Latham, Nicole Pfiester, Wu, Xueyuan, Bingham, Chris, Padilla, Willie, Vandervelde, Thomas E.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 797 KB

english, 2014

66

PMOS transistors in LPCVD polycrystalline silicon-germanium films

T. King, K. Saraswat, J. Pfiester

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 283 KB

english, 1991

67

[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - An integrated 0.5 mu m CMOS disposable TiN LDD/salicide spacer technology

Pfiester, J.R., Parrillo, L.C., Woo, M., Kawasaki, H., Boeck, B., Travis, E., Gunderson, C.

Year:

1989

Language:

english

File:

PDF, 215 KB

english, 1989

68

[IEEE Symposium on VLSI Technology - Kyoto, Japan (1997.06.12-1997.06.12)] Symposium on VLSI Technology - Scaling Inter-poly Contacts For 0.25 /spl mu/m And Below With WSI/sub x/ Polishing

Perera,, Lii,, Iyer,, Bajaj,, Pfiester,, Fengs,, Thuy Dao,, O'Meara,, Adetutu,, McGuffin,, Larson,, BIackwell,

Year:

1997

Language:

english

File:

PDF, 671 KB

english, 1997

69

[IEEE 1992 Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA (7-8 Oct. 1992)] Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting - An ultra-shallow link base for a double polysilicon bipolar transistor

Hayden, J.D., Burnett, J.D., Pfiester, J.R., Woo, M.P.

Year:

1992

Language:

english

File:

PDF, 421 KB

english, 1992

70

[IRE 1987 International Electron Devices Meeting - ()] 1987 International Electron Devices Meeting - Asymmetrical high field effects in submicron MOSFET's

Pfiester, J.R., Baker, F.K.

Year:

1987

Language:

english

File:

PDF, 340 KB

english, 1987

71

[International Review of Cytology] Volume 114 || Dinoflagellate Sexuality

Pfiester, Lois A.

Year:

1989

Language:

english

File:

PDF, 1.40 MB

english, 1989

72

[IEEE 1994 VLSI Technology Symposium - Honolulu, HI, USA (7-9 June 1994)] Proceedings of 1994 VLSI Technology Symposium - A compact inverted-spacer TFT for high-density SRAMs

Pfiester, J.R., Lin, J.-H., Mocala, K., Ku, Y.-C., Higman, J., McNelly, T., Blackwell, M., Kaushik, V., James, B.M., Hegde, R.I.

Year:

1994

Language:

english

File:

PDF, 261 KB

english, 1994

73

Improved MOSFET short-channel device using germanium implantation

Pfiester, J.R., Law, M.E., Dutton, R.W.

Journal:

IEEE Electron Device Letters

Year:

1988

Language:

english

File:

PDF, 301 KB

english, 1988

74

LDD MOSFETs using disposable sidewall spacer technology

Journal:

IEEE Electron Device Letters

Year:

1988

Language:

english

File:

PDF, 314 KB

english, 1988

75

A variable-work-function polycrystalline-Si/sub 1-x/Ge/sub x/ gate material for submicrometer CMOS technologies

King, T.-J., Pfiester, J.R., Saraswat, K.C.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 304 KB

english, 1991

76

A self-aligned elevated source/drain MOSFET

Pfiester, J.R., Sivan, R.D., Liaw, H.M., Seelbach, C.A., Gunderson, C.D.

Journal:

IEEE Electron Device Letters

Year:

1990

Language:

english

File:

PDF, 257 KB

english, 1990

77

Accurate profile simulation parameters in BF/sub 2/ implants in pre-amorphized silicon

Tasch, A.F., Shin, H., Park, C., Alvis, J., Novak, S., Pfiester, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 354 KB

english, 1989

78

[IEEE 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1994)] Proceedings of 1994 IEEE International Electron Devices Meeting - A symmetric Vss cross-under bitcell technology for 64 Mb SRAMs

Pfiester, J.R., Hayden, S.D., Thompson, M., Miller, F., Lin, H.-J., Blackwell, M.J., Mocala, K., Ku, Y.-C., Subramanian, C.K., Waldo, W., Ajuria, S., James, B.M., Martino, B.

Year:

1994

Language:

english

File:

PDF, 347 KB

english, 1994

79

A selectively deposited poly-gate ITLDD process with self-aligned LDD/channel implantation

Pfiester, J.R., Baker, F.K., Sivan, R.D., Crain, N., Lin, J.-H., Liaw, M., Seelbach, C., Gunderson, C., Denning, D.

Journal:

IEEE Electron Device Letters

Year:

1990

Language:

english

File:

PDF, 305 KB

english, 1990

80

A cobalt salicide CMOS process with TiN-strapped polysilicon gates

Pfiester, J.R., Mele, T.C., Limb, Y., Jones, R.E., Woo, M., Boeck, B., Gunderson, C.D.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 284 KB

english, 1991

81

A poly-framed LDD sub-half-micrometer CMOS technology

Pfiester, J.R., Crain, N., Lin, J.-H., Gunderson, C.D., Kaushik, V.

Journal:

IEEE Electron Device Letters

Year:

1990

Language:

english

File:

PDF, 264 KB

english, 1990

82

[IEEE IEEE International Electron Devices Meeting - Washington, DC, USA (5-8 Dec. 1993)] Proceedings of IEEE International Electron Devices Meeting - Sensitivity of field isolation profiles to active pattern

Kenkare, P.U., Pfiester, J.R., Hayden, J.D., Subrahmanyan, R., Hegde, R.I., Kaushik, V.

Year:

1993

Language:

english

File:

PDF, 382 KB

english, 1993

83

[IRE 1987 International Electron Devices Meeting - ()] 1987 International Electron Devices Meeting - Novel germanium/boron channel-stop implantation for submicron CMOS

Pfiester, J.R., Alvis, J.R.

Year:

1987

Language:

english

File:

PDF, 259 KB

english, 1987

84

[IEEE 1984 IEEE International Solid-State Circuits Conference - San Francisco, CA, USA (1984.02.22-1984.02.24)] 1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers - Performance limits of NMOS and CMOS

Pfiester, J., Shott, J., Meindl, J.

Year:

1984

Language:

english

File:

PDF, 368 KB

english, 1984

85

[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - High performance 0.25 μm SRAM technology with tungsten interpoly plug

McNelly, T.F., Hayden, J.D., Perera, A.H., Pfiester, J.R., Subramanian, C.K., Blackwell, M., James, B., Ajuria, S., Fell, W., Ku, Y.C., Lii, T., Lin, J.-H., Nkansah, F., Philbin, C., Sun, C.J., Thomps

Year:

1995

Language:

english

File:

PDF, 1.04 MB

english, 1995

86

[IEEE IEEE 2005 Custom Integrated Circuits Conference, 2005. - San Jose, CA, USA (Sept. 18-21, 2005)] Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005. - A versatile low-jitter PLL in 90-nm CMOS for serdes transmitter clocking

Loke, A.L.S., Barnes, R.K., Wee, T.T., Oshima, M.M., Moore, C.E., Kennedy, R.R., Barnes, J.O., Zimmer, R.A., Arave, K.L., Pang, H.H.M., Cynkar, T.E., Volz, A.M., Pfiester, J.R., Martin, R.J., Miller,

Year:

2005

Language:

english

File:

PDF, 796 KB

english, 2005

87

Effect of Population Structure and Size on Aggregation Behavior of Cimex lectularius (Hemiptera: Cimicidae)

Pfiester, Margie, Koehler, Philip G., Pereira, Roberto M.

Journal:

Journal of Medical Entomology

Year:

2009

Language:

english

File:

PDF, 124 KB

english, 2009

88

[IEEE 1989 Proceedings of the IEEE Custom Integrated Circuits Conference - San Diego, CA, USA (1989.05.15-1989.05.18)] 1989 Proceedings of the IEEE Custom Integrated Circuits Conference - A dual-poly (n+/p+) gate, Ti-salicide, double-metal technology for submicron CMOS ASIC and logic applications

Sun, S.W., Swenson, M., Yeargain, J.R., Lee, C.-O., Swift, C., Pfiester, J.R., Bibeau, W., Atwell, W.

Year:

1989

Language:

english

File:

PDF, 289 KB

english, 1989

89

A novel PMOS SOI polysilicon transistor

Pfiester, J.R., Hayden, J.D., Gunderson, C.D., Lin, J.-H., Kaushik, V.

Journal:

IEEE Electron Device Letters

Year:

1990

Language:

english

File:

PDF, 241 KB

english, 1990

90

The effect of biased spacers on LDD MOSFET behavior

Parrillo, L.C., Pfiester, J.R., Woo, M.P., Roman, B., Ray, W., Ko, J., Gunderson, C.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 307 KB

english, 1991

91

An advanced 0.5- mu m CMOS disposable TiN LDD/salicide spacer process

Pfiester, J.R., Parrillo, L.C., Woo, M., Kawasaki, H., Boeck, B., Travis, E.O., Gunderson, C.D.

Journal:

IEEE Electron Device Letters

Year:

1990

Language:

english

File:

PDF, 284 KB

english, 1990

92

A novel 0.5- mu m n/sup +/-p/sup +/ poly-gated salicide CMOS process

Pfiester, J.R., Yeargain, J.R., Swenson, M.S., Alvis, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 813 KB

english, 1989

93

Anomalous co-diffusion effects of germanium on group III and V dopants in silicon

Pfiester, J. R., Griffin, P. B.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 482 KB

english, 1988

94

[IEEE Symposium on VLSI Technology - Kyoto, Japan (1997.06.12-1997.06.12)] Symposium on VLSI Technology - Nitride-Clad LOCOS Isolation For 0.25/spl mu/m CMOS

Pfiester,, Kenkare,, Subrahmanyan,, Lin,, Crabtree,

Year:

1993

Language:

english

File:

PDF, 248 KB

english, 1993

95

[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - A TiN strapped polysilicon gate cobalt salicide CMOS process

Pfiester, J.R., Mele, T.C., Limb, Y., Jones, R.E., Woo, M., Boeck, B., Gunderson, C.D.

Year:

1990

Language:

english

File:

PDF, 300 KB

english, 1990

96

[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - A polycrystalline-Si/sub 1-x/Ge/sub x/-gate CMOS technology

King, T.-J., Pfiester, J.R., Shott, J.D., McVittie, J.P., Saraswat, K.C.

Year:

1990

Language:

english

File:

PDF, 348 KB

english, 1990

97

[IEEE Proceedings of IEEE International Electron Devices Meeting - San Francisco, CA, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - Reverse Elevated Source/Drain (RESD) MOSFET for deep submicron CMOS

Pfiester,, Woo,, Fitch,, Schmidt,

Year:

1992

Language:

english

File:

PDF, 305 KB

english, 1992

98

[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - The effect of implantation damage on arsenic/phosphorus codiffusion

Law, M.E., Pfiester, J.R., Dutton, R.W.

Year:

1988

File:

PDF, 279 KB

1988

99

[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - A self-aligned LDD/channel implanted ITLDD process with selectively-deposited poly gates for CMOS VLSI

Pfiester, J.R., Baker, F.K., Sivan, R.D., Crain, N., Lin, H.-H., Liaw, M., Seelbach, C., Gunderson, C., Denning, D.

Year:

1989

Language:

english

File:

PDF, 245 KB

english, 1989

100

A physical model for boron penetration through thin gate oxides from p/sup +/ polysilicon gates

Pfiester, J.R., Parrillo, L.C., Baker, F.K.

Journal:

IEEE Electron Device Letters

Year:

1990

Language:

english

File:

PDF, 285 KB

english, 1990