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51

Analysis of the Double Laser Emission Occurring in 1.55-μm InAs–InP (113)B Quantum-Dot Lasers

Veselinov, K., Grillot, F., Cornet, C., Even, J., Bekiarski, A., Gioannini, M., Loualiche, S.

Journal:

IEEE Journal of Quantum Electronics

Year:

2007

Language:

english

File:

PDF, 607 KB

english, 2007

52

Spectral Analysis of 1.55-m InAs–InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model

Grillot, F., Veselinov, K., Gioannini, M., Montrosset, I., Even, J., Piron, R., Homeyer, E., Loualiche, S.

Journal:

IEEE Journal of Quantum Electronics

Year:

2009

Language:

english

File:

PDF, 368 KB

english, 2009

53

Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon

Nguyen Thanh, T., Robert, C., Guo, W., Létoublon, A., Cornet, C., Elias, G., Ponchet, A., Rohel, T., Bertru, N., Balocchi, A., Durand, O., Micha, J. S., Perrin, M., Loualiche, S., Marie, X., Le Corre

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 3.74 MB

english, 2012

54

Achievement of High Density InAs/GaInAsP Quantum Dots on Misoriented InP(001) Substrates Emitting at 1.55 µm

Elias, Georges, Létoublon, Antoine, Piron, Rozenn, Alghoraibi, Ibrahim, Nakkar, Abdulhadi, Chevalier, Nicolas, Tavernier, Karine, Corre, Alain Le, Bertru, Nicolas, Loualiche, Slimane

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 251 KB

english, 2009

55

Achievement of High Density InAs Quantum Dots on InP (311)B Substrate Emitting at 1.55 µm

Caroff, P., Bertru, N., Le Corre, A., Dehaese, O., Rohel, T., Alghoraibi, I., Folliot, H., Loualiche, S.

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 186 KB

english, 2005

56

SPIE Proceedings [SPIE OPTO - San Francisco, California (Saturday 23 January 2010)] Quantum Sensing and Nanophotonic Devices VII - QD laser on InP substrate for 1.55 μm emission and beyond

Bertru, N., Paranthoen, C., Dehaese, O., Folliot, H., Le Corre, A., Piron, R., Grillot, F., Lu, W., Even, J., Elias, G., Levallois, C., Loualiche, S., Bozkurt, M., Ulloa, J., Koenraad, P., Ponchet, A.

Year:

2010

Language:

english

File:

PDF, 1.09 MB

english, 2010

57

Demonstration of a Low Threshold Current in 1.54 µm InAs/InP(311)B Quantum Dot Laser with Reduced Quantum Dot Stacks

Homeyer, Estelle, Piron, Rozenn, Grillot, Frédéric, Dehaese, Olivier, Tavernier, Karine, Macé, Erwan, Even, Jacky, Le Corre, Alain, Loualiche, Slimane

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 123 KB

english, 2007

58

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

Paranthoen, C., Bertru, N., Dehaese, O., Le Corre, A., Loualiche, S., Lambert, B., Patriarche, G.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 469 KB

english, 2001

59

Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser

C. Paranthoen, C. Platz, G. Moreau, N. Bertru, O. Dehaese, A. Le Corre, P. Miska, J. Even, H. Folliot, C. Labbé, G. Patriarche, J.C. Simon, S. Loualiche

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 430 KB

english, 2003

60

[IEEE Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) - Davos, Switzerland (16-20 May 1999)] Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) - Carrier capture in self-assembled InAs/InP quantum dots

Hinooda, S., Bertru, N., Frechengues, S., Lambert, B., Loualiche, S., Paillard, M., Marie, X., Amand, T.

Year:

1999

Language:

english

File:

PDF, 332 KB

english, 1999

61

[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - InAs quantum wires on InP substrate for VCSEL applications

Lamy, J. M., Paranthoen, C., Levallois, C., Nakkar, A., Folliot, H., Dehaese, O., Le Corre, A., Loualiche, S., Castany, O., Dupont, L.

Year:

2008

Language:

english

File:

PDF, 403 KB

english, 2008

62

Si wafer bonded of a-Siâa-SiN[sub x] distributed Bragg reflectors for 1.55-Î¼m-wavelength vertical cavity surface emitting lasers

Levallois, C., Le Corre, A., Loualiche, S., Dehaese, O., Folliot, H., Paranthoen, C., Thoumyre, F., LabbeÌ, C.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 449 KB

english, 2005

63

Time-resolved pump probe of 1.55âÎ¼m InAsâInP quantum dots under high resonant excitation

Cornet, C., LabbeÌ, C., Folliot, H., Caroff, P., Levallois, C., Dehaese, O., Even, J., Le Corre, A., Loualiche, S.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 578 KB

english, 2006

64

Impact of the capping layers on lateral confinement in InAsâInP quantum dots for 1.55âÎ¼m laser applications studied by magnetophotoluminescence

Cornet, C., Levallois, C., Caroff, P., Folliot, H., LabbeÌ, C., Even, J., Le Corre, A., Loualiche, S., Hayne, M., Moshchalkov, V. V.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 215 KB

english, 2005

65

High-gain and low-threshold InAs quantum-dot lasers on InP

Caroff, P., Paranthoen, C., Platz, C., Dehaese, O., Folliot, H., Bertru, N., LabbeÌ, C., Piron, R., Homeyer, E., Le Corre, A., Loualiche, S.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 436 KB

english, 2005

66

quantum dots

Cornet, C., Platz, C., Caroff, P., Even, J., Labbé, C., Folliot, H., Le Corre, A., Loualiche, S.

Journal:

Physical Review B

Year:

2005

Language:

english

File:

PDF, 502 KB

english, 2005

67

Quantitative investigations of optical absorption in InAsâInPâ(311)B quantum dots emitting at 1.55âÎ¼m wavelength

Cornet, C., LabbeÌ, C., Folliot, H., Bertru, N., Dehaese, O., Even, J., Le Corre, A., Paranthoen, C., Platz, C., Loualiche, S.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 280 KB

english, 2004

68

Long-wavelength vertical-cavity surface-emitting laser using an electro-optic index modulator with 10ânm tuning range

Levallois, C., Caillaud, B., de Bougrenet de la Tocnaye, J.-L., Dupont, L., Le Corre, A., Folliot, H., Dehaese, O., Loualiche, S.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 483 KB

english, 2006

69

Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission

Miska, P, Paranthoen, C, Even, J, Dehaese, O, Folliot, H, Bertru, N, Loualiche, S, Senes, M, Marie, X

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 166 KB

english, 2002

70

Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection

Platz, C, Paranthoën, C, Caroff, P, Bertru, N, Labbé, C, Even, J, Dehaese, O, Folliot, H, Corre, A Le, Loualiche, S, Moreau, G, Simon, J C, Ramdane, A

Journal:

Semiconductor Science and Technology

Year:

2005

Language:

english

File:

PDF, 177 KB

english, 2005

71

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X - Systematic investigation of the temperature behavior of InAs/InP quantum nanostructure passively mode-locked lasers

Klaime, K., Piron, R., Grillot, F., Dontabactouny, M., Loualiche, S., Le Corre, A., Yvind, K., Eyink, Kurt G., Huffaker, Diana L., Szmulowicz, Frank

Year:

2013

Language:

english

File:

PDF, 586 KB

english, 2013

72

InAsSbâInP quantum dots for midwave infrared emitters: A theoretical study

Cornet, C., DoreÌ, F., Ballestar, A., Even, J., Bertru, N., Le Corre, A., Loualiche, S.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 244 KB

english, 2005

73

Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)

FreÌchengues, S., Drouot, V., Lambert, B., Lemoine, D., Loualiche, S., Le Corre, A., LâHaridon, H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 498 KB

english, 1997

74

Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates

Nguyen Thanh, T., Robert, C., Giudicelli, E., Létoublon, A., Cornet, C., Ponchet, A., Rohel, T., Balocchi, A., Micha, J.S., Perrin, M., Loualiche, S., Marie, X., Bertru, N., Durand, O., Le Corre, A.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 913 KB

english, 2013

75

Photonics based on carbon nanotubes

Gu, Qingyuan, Gicquel-Guézo, Maud, Loualiche, Slimane, Pouliquen, Julie, Batte, Thomas, Folliot, Hervé, Dehaese, Olivier, Grillot, Frederic, Battie, Yann, Loiseau, Annick, Liang, Baolai, Huffaker, Dia

Journal:

Nanoscale Research Letters

Year:

2013

Language:

english

File:

PDF, 183 KB

english, 2013

76

New analytical calculations of the resonance modes in lens-shaped cavities: applications to the calculations of the energy levels and electronic wavefunctions in quantum dots

Even, J, Loualiche, S

Journal:

Journal of Physics A: Mathematical and General Physics

Year:

2003

Language:

english

File:

PDF, 200 KB

english, 2003

77

Temperature and pressure dependence of the recombination processes in 1.5 μm InAs∕InP (311)B quantum dot lasers

Massé, N. F., Homeyer, E., Marko, I. P., Adams, A. R., Sweeney, S. J., Dehaese, O., Piron, R., Grillot, F., Loualiche, S.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 291 KB

english, 2007

78

In-plane anisotropy of quantum elliptic heterostructures studied with symmetry-adapted Mathieu functions: an application to self-organized InAs quantum dots on InP

Even, J, Loualiche, S, Miska, P, Platz, C

Journal:

Journal of Physics Condensed Matter

Year:

2003

Language:

english

File:

PDF, 283 KB

english, 2003

79

Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster

Quinci, T., Kuyyalil, J., Thanh, T. Nguyen, Wang, Y. Ping, Almosni, S., Létoublon, A., Rohel, T., Tavernier, K., Chevalier, N., Dehaese, O., Boudet, N., Bérar, J.F., Loualiche, S., Even, J., Bertru, N

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 3.31 MB

english, 2013

80

substrates: Theory and experiment

Cornet, C., Schliwa, A., Even, J., Doré, F., Celebi, C., Létoublon, A., Macé, E., Paranthoën, C., Simon, A., Koenraad, P. M., Bertru, N., Bimberg, D., Loualiche, S.

Journal:

Physical Review B

Year:

2006

Language:

english

File:

PDF, 714 KB

english, 2006

81

[IEEE 2013 25th International Conference on Indium Phosphide and Related Materials (IPRM) - Kobe, Japan (2013.05.19-2013.05.23)] 2013 International Conference on Indium Phosphide and Related Materials (IPRM) - InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

Klaime, K., Calo, C., Piron, R., Paranthoen, C., Thiam, D., Batte, T., Dehaese, O., Le Pouliquen, J., Loualiche, S., Le Corre, A., Merghem, K, Martinez, A., Ramdane, A.

Year:

2013

Language:

english

File:

PDF, 638 KB

english, 2013

82

[IEEE 2012 24th International Conference on Indium Phosphide & Related Materials (IPRM) - Santa Barbara, CA, USA (2012.08.27-2012.08.30)] 2012 International Conference on Indium Phosphide and Related Materials - 20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate

Klaime, K., Piron, R., Paranthoen, C., Batte, T., Grillot, F., Dehaese, O., Loualiche, S., Le Corre, A., Rosales, R., Merghem, K., Martinez, A., Ramdane, A.

Year:

2012

Language:

english

File:

PDF, 363 KB

english, 2012

83

Wavelength tuning of InAs quantum dots grown on (311)B InP

Fréchengues, S., Bertru, N., Drouot, V., Lambert, B., Robinet, S., Loualiche, S., Lacombe, D., Ponchet, A.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 427 KB

english, 1999

84

High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5 -

Lambert, B, Corre, A Le, Drouot, V, L'Haridon, H, Loualiche, S

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 81 KB

english, 1998

85

Dynamic properties of InAs∕InP (311)B quantum dot Fabry–Perot lasers emitting at 1.52 μm

Martinez, A., Merghem, K., Bouchoule, S., Moreau, G., Ramdane, A., Provost, J.-G., Alexandre, F., Grillot, F., Dehaese, O., Piron, R., Loualiche, S.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 469 KB

english, 2008

86

Low-temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT

Loualiche, S., Ginudi, A., Le Corre, A., Lecrosnier, D., Vaudry, C., Henry, L., Guillemot, C.

Journal:

IEEE Electron Device Letters

Year:

1990

Language:

english

File:

PDF, 247 KB

english, 1990

87

[IEEE Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) - Davos, Switzerland (16-20 May 1999)] Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) - Achievement of vertically stacked InAs quantum dots on InP emitting at 1.55 μm

Frechenges, S., Bertru, N., Drouot, V., Dehaese, O., Loualiche, S., Lambert, B.

Year:

1999

Language:

english

File:

PDF, 226 KB

english, 1999

88

[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - Evidence of lateral coupling on the carrier dynamics in InAs/InP(311)B quantum dots

Dore, F., Labbe, C., Folliot, H., Nakkar, A., Paranthoen, C., Chevalier, N., Tavernier, K., Even, J., Loualiche, S., Lagarde, D., Balocchi, A., Marie, X.

Year:

2008

Language:

english

File:

PDF, 599 KB

english, 2008

89

[IEEE International Conference on Indium Phosphide and Related Materials - Denver, CO, USA (1990.04.23-1990.04.25)] International Conference on Indium Phosphide and Related Materials - Low temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT

Loualiche, S., Ginudi, A., Le Corre, A., Lecrosnier, D., Vaudry, C., Henry, L., Guillemot, C.

Year:

1990

File:

PDF, 277 KB

1990

90

Structural and optical properties of AlInAs/InP and GaPSb/InP type II interfaces

Sacilotti, M., Abraham, P., Pitaval, M., Ambri, M., Benyattou, T., Tabata, A., Perez, M. A. Garcia, Motisuke, P., Landers, R., Morais, J., Corre, A. Le, Loualiche, S.

Journal:

Canadian Journal of Physics

Year:

1996

File:

PDF, 458 KB

1996

91

[IEEE Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA (11-15 May 1997)] Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials - Growth study of self-assembled Ga/sub x/In/sub 1-x/As islands on InP

Drouot, V., Frechengues, S., Lambert, B., Loualiche, S., Le Corre, A., l'Haridon, H., Bandet, M.

Year:

1997

Language:

english

File:

PDF, 557 KB

english, 1997

92

[IEEE Related Materials (IPRM) - Newport Beach, CA, USA (2009.05.10-2009.05.14)] 2009 IEEE International Conference on Indium Phosphide & Related Materials - Improvement of 1.55 µm InAs QD laser using vicinal (001)InP substrate

Elias, G., Letoublon, A., Piron, R., Alghraibi, I., Tavernier, K., Chevalier, N., Bertru, N., Le Corre, A., Loualiche, S.

Year:

2009

Language:

english

File:

PDF, 1.32 MB

english, 2009

93

290 fs switching time of Fe-doped quantum well saturable absorbers in a microcavity in 1.55 μm range

M. Gicquel-guézo, S. Loualiche, J. Even, C. Labbé, O. Dehaese, A. Le Corre, H. Folliot, Y. Pellan

Year:

2004

Language:

english

File:

PDF, 371 KB

english, 2004

94

High-speed 1.55 μm Fe-doped multiple-quantum-well saturable absorber on InP

A. Marceaux, S. Loualiche, O. Dehaese, B. Lambert

Year:

2001

Language:

english

File:

PDF, 293 KB

english, 2001

95

[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - GSMBE single step epitaxy of pseudo buried heterostructure laser

Loualiche, S., Le Corre, A., Vaudry, C., Henry, L., Clerot, F.

Year:

1993

Language:

english

File:

PDF, 221 KB

english, 1993

96

GaPSb: A new ternary material for Schottky diode fabrication on InP

Loualiche, S., Le Corre, A., Salaun, S., Caulet, J., Lambert, B., Gauneau, M., Lecrosnier, D., Deveaud, B.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 489 KB

english, 1991

97

Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

Cornet, C., Hayne, M., Caroff, P., Levallois, C., Joulaud, L., Homeyer, E., Paranthoen, C., Even, J., Labbé, C., Folliot, H., Moshchalkov, V. V., Loualiche, S.

Journal:

Physical Review B

Year:

2006

Language:

english

File:

PDF, 750 KB

english, 2006

98

Polarization control of 1.6 μm vertical-cavity surface-emitting lasers using InAs quantum dashes on InP(001)

Lamy, J. M., Paranthoen, C., Levallois, C., Nakkar, A., Folliot, H., Gauthier, J. P., Dehaese, O., Le Corre, A., Loualiche, S.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 596 KB

english, 2009

99

Electron irradiation effects in p-type GaAs

Journal:

Journal of Applied Physics

Year:

1982

Language:

english

File:

PDF, 643 KB

english, 1982

100

Optical properties and morphology of InAs∕InP (113)B surface quantum dots

A. Nakkar, H. Folliot, A. Le Corre, F. Doré, I. Alghoraibi, C. Labbé, G. Elias, S. Loualiche, M. Pistol, P. Caroff, C. Ellström

Year:

2008

Language:

english

File:

PDF, 566 KB

english, 2008

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