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101

miR-22 inhibits osteosarcoma cell proliferation and migration by targeting HMGB1 and inhibiting HMGB1-mediated autophagy

Guo, Shibing, Bai, Rui, Liu, Wanlin, Zhao, Aiqing, Zhao, Zhenqun, Wang, Yuxin, Wang, Yong, Zhao, Wei, Wang, Wenxuan

Journal:

Year:

2014

Language:

english

File:

PDF, 2.25 MB

english, 2014

102

Amino acid-modified cyclodextrins as ligands for Heck reaction in water

Hong, Shibing, Liu, Mengyan, Shuai, Yuan, Wang, Zhuyi, Shi, Liyi, Deng, Wei

Journal:

Journal of Inclusion Phenomena and Macrocyclic Chemistry

Year:

2014

Language:

english

File:

PDF, 328 KB

english, 2014

103

: Structural transitions and metallization under pressure

Zhao, Zhao, Wang, Shibing, Oganov, Artem R., Chen, Pengcheng, Liu, Zhenxian, Mao, Wendy L.

Journal:

Physical Review B

Year:

2014

Language:

english

File:

PDF, 1.32 MB

english, 2014

104

Resistive switching characteristics of MnO x -based ReRAM

Zhang, Sen, Long, Shibing, Guan, Weihua, Liu, Qi, Wang, Qin, Liu, Ming

Journal:

Journal of Physics D Applied Physics

Year:

2009

Language:

english

File:

PDF, 215 KB

english, 2009

105

[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Self-rectifying resistive memory based on Au nanocrystal-embedded zirconium oxide for crossbar array application

Qingyun Zuo,, Shibing Long,, Qi Liu,, Sen Zhang,, Qin Wang,, Yingtao Li,, Yan Wang,, Ming Liu,

Year:

2010

Language:

english

File:

PDF, 89 KB

english, 2010

106

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

Long, Shibing, Perniola, Luca, Cagli, Carlo, Buckley, Julien, Lian, Xiaojuan, Miranda, Enrique, Pan, Feng, Liu, Ming, Suñé, Jordi

Journal:

Scientific Reports

Year:

2013

Language:

english

File:

PDF, 1.21 MB

english, 2013

107

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Sun, Haitao, Liu, Qi, Li, Congfei, Long, Shibing, Lv, Hangbing, Bi, Chong, Huo, Zongliang, Li, Ling, Liu, Ming

Journal:

Advanced Functional Materials

Year:

2014

Language:

english

File:

PDF, 1.38 MB

english, 2014

108

Synthesis and electrochemical properties of Li4Ti5O12 spheres and its application for hybrid supercapacitors

Deng, SiXu, Li, JingWen, Sun, ShiBing, Wang, Hao, Liu, JingBing, Yan, Hui

Journal:

Electrochimica Acta

Year:

2014

Language:

english

File:

PDF, 1.64 MB

english, 2014

109

Self-Rectifying Resistive-Switching Device With $ \hbox{a-Si/WO}_{3}$ Bilayer

Lv, Hangbing, Li, Yingtao, Liu, Qi, Long, Shibing, Li, Ling, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 331 KB

english, 2013

110

Thermal melt processing to prepare halogen-free flame retardant poly(vinyl alcohol)

Liu, Pengju, Chen, Wenhua, Liu, Yuan, Bai, Shibing, Wang, Qi

Journal:

Polymer Degradation and Stability

Year:

2014

Language:

english

File:

PDF, 2.44 MB

english, 2014

111

[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - Voltage driving or current driving: Which is preferred for RRAM programming?

Lv, Hangbing, Lian, Wentai, Long, Shibing, Liu, Qi, Li, Yingtao, Wang, Wei, Wang, Yan, Zhang, Sen, Liu, Ming

Year:

2011

Language:

english

File:

PDF, 324 KB

english, 2011

112

$ hbox{ZrO}_{2}$-Based ReRAM With a Cu Nanocrystal Insertion Layer]]>

Liu, Qi, Long, Shibing, Wang, Wei, Tanachutiwat, Sansiri, Li, Yingtao, Wang, Qin, Zhang, Manhong, Huo, Zongliang, Chen, Junning, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 391 KB

english, 2010

113

Thermoelectric Seebeck effect in oxide-based resistive switching memory

Wang, Ming, Bi, Chong, Li, Ling, Long, Shibing, Liu, Qi, Lv, Hangbing, Lu, Nianduan, Sun, Pengxiao, Liu, Ming

Journal:

Nature Communications

Year:

2014

Language:

english

File:

PDF, 546 KB

english, 2014

114

at high pressure

Wang, Shibing, Kemper, Alexander F., Baldini, Maria, Shapiro, M. C., Riggs, Scott C., Zhao, Zhao, Liu, Zhenxian, Devereaux, Thomas P., Geballe, Ted H., Fisher, Ian R., Mao, Wendy L.

Journal:

Physical Review B

Year:

2014

Language:

english

File:

PDF, 1.23 MB

english, 2014

115

[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA (2013.4.14-2013.4.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - Compact analytical models for the SET and RESET switching statistics of RRAM inspired in the cell-based percolation model of gate dielectric breakdown

Shibing Long,, Xiaojuan Lian,, Cagli, C., Perniola, L., Miranda, E., Jimenez, D., Hangbing Lv,, Qi Liu,, Ling Li,, Zongliang Huo,, Ming Liu,, Sune, J.

Year:

2013

Language:

english

File:

PDF, 446 KB

english, 2013

116

Investigation of One-Dimensional Thickness Scaling on $ \hbox{Cu/HfO}_{x}/\hbox{Pt}$ Resistive Switching Device Performance

Wang, Ming, Lv, Hangbing, Liu, Qi, Li, Yingtao, Xu, Zhongguang, Long, Shibing, Xie, Hongwei, Zhang, Kangwei, Liu, Xiaoyu, Sun, Haitao, Yang, Xiaoyi, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 485 KB

english, 2012

117

[IEEE 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2013.06.3-2013.06.5)] 2013 IEEE International Conference of Electron Devices and Solid-state Circuits - Ultra-low RESET current RRAM device by side-RESET operation method

Haitao Sun,, Hangbing Lv,, Qi Liu,, Shibing Long,, Ming Wang,, Hongwei Xie,, Xiaoyu Liu,, Xiaoyi Yang,, Jiebin Niu,, Ming Liu,

Year:

2013

Language:

english

File:

PDF, 522 KB

english, 2013

118

Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications

Yingtao Li,, Shibing Long,, Manhong Zhang,, Qi Liu,, Lubing Shao,, Sen Zhang,, Yan Wang,, Qingyun Zuo,, Su Liu,, Ming Liu,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 478 KB

english, 2010

119

[IEEE 2008 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems - Sanya, China (2008.01.6-2008.01.9)] 2008 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems - A compact microstructure mechanical property measuring system

Tao Chen,, Lin Zhang,, Jian Wu,, Shibing Liu,, Tiechuan Zuo,

Year:

2008

Language:

english

File:

PDF, 181 KB

english, 2008

120

1995 Technical Field Awards

Long, Shibing, Cagli, Carlo, Ielmini, Daniele, Liu, Ming, Sune, Jordi

Journal:

Year:

1995

Language:

english

File:

PDF, 576 KB

english, 1995

121

Reset Statistics of NiO-Based Resistive Switching Memories

Long, Shibing, Cagli, Carlo, Ielmini, Daniele, Liu, Ming, Sune, Jordi

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 305 KB

english, 2011

122

[IEEE 2007 IEEE Conference on Electron Devices and Solid-State Circuits - Tainan, Taiwan (2007.12.20-2007.12.22)] 2007 IEEE Conference on Electron Devices and Solid-State Circuits - Analysis of Charge Retention Characteristics for Metal and Semiconductor Nanocrystal Non-volatile Memories

Guan, Weihua, Long, Shibing, Jia, Rui, Liu, Qi, Hu, Yuan, Wang, Qin, Liu, Ming

Year:

2007

Language:

english

File:

PDF, 527 KB

english, 2007

123

[IEEE 2011 11th Annual Non-Volatile Memory Technology Symposium (NVMTS) - Shanghai, China (2011.11.7-2011.11.9)] 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding - From dielectric failure to memory function: Learning from oxide breakdown for improved understanding of resistive switching memories

Sune, Jordi, Miranda, Enrique, Jimenez, David, Long, Shibing, Liu, Ming

Year:

2011

Language:

english

File:

PDF, 792 KB

english, 2011

124

$\hbox{ZrO}_{2}$-Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application

Qingyun Zuo,, Shibing Long,, Shiqian Yang,, Qi Liu,, Lubing Shao,, Qin Wang,, Sen Zhang,, Yingtao Li,, Yan Wang,, Ming Liu,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 227 KB

english, 2010

125

[IEEE 2013 14th International Conference on Ultimate Integration on Silicon (ULIS 2013) - Coventry (2013.3.19-2013.3.21)] 2013 14th International Conference on Ultimate Integration on Silicon (ULIS) - Statistical approach to the RESET switching of the HfO2-based solid electrolyte memory

Xiaoyi Yang,, Shibing Long,, Kangwei Zhang,, Xiaojuan Lian,, Xiaoyu Liu,, Qi Liu,, Hangbing Lv,, Sune, J., Ming Liu,

Year:

2013

Language:

english

File:

PDF, 715 KB

english, 2013

126

[IEEE 2013 14th International Conference on Ultimate Integration on Silicon (ULIS 2013) - Coventry (2013.3.19-2013.3.21)] 2013 14th International Conference on Ultimate Integration on Silicon (ULIS) - Experimental evidence for a quantum wire state in HfO2-based VCM-RRAM

Xiaojuan Lian,, Miranda, E., Shibing Long,, Perniola, L., Ming Liu,, Sune, J.

Year:

2013

Language:

english

File:

PDF, 1.13 MB

english, 2013

127

Effects of Prescription Nonsteroidal Antiinflammatory Drugs on Symptoms and Disease Progression Among Patients With Knee Osteoarthritis

Lapane, Kate L., Yang, Shibing, Driban, Jeffrey B., Liu, Shao-Hsien, Dubé, Catherine E., McAlindon, Timothy E., Eaton, Charles B.

Journal:

Arthritis & Rheumatology

Year:

2015

Language:

english

File:

PDF, 1.75 MB

english, 2015

128

Reset Instability in $\hbox{Cu}/\hbox{ZrO}_{2}$:Cu/Pt RRAM Device

Li, Yingtao, Long, Shibing, Lv, Hangbing, Liu, Qi, Wang, Wei, Wang, Qin, Huo, Zongliang, Wang, Yan, Zhang, Sen, Liu, Su, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 302 KB

english, 2011

129

[IEEE 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2014.4.28-2014.4.30)] Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Realizing multimode of resistive switching in single Ag/SiO2/Pt device via tuning forming compliance current

Haitao Sun,, Liu, Qi, Shibing Long,, Hangbing Lv,, Ming Liu,

Year:

2014

Language:

english

File:

PDF, 1.02 MB

english, 2014

130

Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

Lian, Xiaojuan, Cartoixà, Xavier, Miranda, Enrique, Perniola, Luca, Rurali, Riccardo, Long, Shibing, Liu, Ming, Suñé, Jordi

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 2.04 MB

english, 2014

131

An overview of the switching parameter variation of RRAM

Zhang, Meiyun, Long, Shibing, Wang, Guoming, Li, Yang, Xu, Xiaoxin, Liu, Hongtao, Liu, Ruoyu, Wang, Ming, Li, Congfei, Sun, Pengxiao, Sun, Haitao, Liu, Qi, Lü, Hangbing, Liu, Ming

Journal:

Chinese Science Bulletin

Year:

2014

Language:

english

File:

PDF, 1.26 MB

english, 2014

132

[IEEE 2011 11th Annual Non-Volatile Memory Technology Symposium (NVMTS) - Shanghai, China (2011.11.7-2011.11.9)] 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding - Cell-based models for the switching statistics of RRAM

Long, Shibing, Cagli, Carlo, Ielmini, Daniele, Liu, Ming, Sune, Jordi

Year:

2011

Language:

english

File:

PDF, 732 KB

english, 2011

133

Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-plane current

Bi, Chong, Huang, Lin, Long, Shibing, Liu, Qi, Yao, Zhihong, Li, Ling, Huo, Zongliang, Pan, Liqing, Liu, Ming

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 897 KB

english, 2014

134

Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide

Guan, Weihua, Long, Shibing, Jia, Rui, Liu, Ming

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 776 KB

english, 2007

135

Retracted Article: High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory

Banerjee, Writam, Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming

Journal:

Year:

2015

Language:

english

File:

PDF, 993 KB

english, 2015

136

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

Sun, Haitao, Liu, Qi, Long, Shibing, Lv, Hangbing, Banerjee, Writam, Liu, Ming

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.22 MB

english, 2014

137

Silicon single electron transistors aiming at a high gate modulation factor

Chen, Jiezhi, Shi, Yi, Pu, Lin, Zheng, Youdou, Long, Shibing, Liu, Ming

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 497 KB

english, 2006

138

Chemical approaches to cell reprogramming

Yu, Chen, Liu, Kai, Tang, Shibing, Ding, Sheng

Journal:

Current Opinion in Genetics & Development

Year:

2014

Language:

english

File:

PDF, 1.03 MB

english, 2014

139

Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory

Zuo, Qingyun, Long, Shibing, Liu, Qi, Zhang, Sen, Wang, Qin, Li, Yingtao, Wang, Yan, Liu, Ming

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 602 KB

english, 2009

140

Differential conductance as a promising approach for rapid DNA sequencing with nanopore-embedded electrodes

He, Yuhui, Shao, Lubing, Scheicher, Ralph H., Grigoriev, Anton, Ahuja, Rajeev, Long, Shibing, Ji, Zhuoyu, Yu, Zhaoan, Liu, Ming

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 2.28 MB

english, 2010

141

Quantum-size effects in hafnium-oxide resistive switching

Long, Shibing, Lian, Xiaojuan, Cagli, Carlo, Cartoixà, Xavier, Rurali, Riccardo, Miranda, Enrique, Jiménez, David, Perniola, Luca, Liu, Ming, Suñé, Jordi

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.08 MB

english, 2013

142

Memory Switching: Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology (Adv. Funct. Mater. 36/2014)

Sun, Haitao, Liu, Qi, Li, Congfei, Long, Shibing, Lv, Hangbing, Bi, Chong, Huo, Zongliang, Li, Ling, Liu, Ming

Journal:

Advanced Functional Materials

Year:

2014

File:

PDF, 4.24 MB

2014

143

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

Long, Shibing, Lian, Xiaojuan, Cagli, Carlo, Perniola, Luca, Miranda, Enrique, Liu, Ming, Sune, Jordi

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 581 KB

english, 2013

144

Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode

Lian, Wentai, Lv, Hangbing, Liu, Qi, Long, Shibing, Wang, Wei, Wang, Yan, Li, Yingtao, Zhang, Sen, Dai, Yuehua, Chen, Junning, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 426 KB

english, 2011

145

[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Chen, Jiezhi, Shi, Yi, Pu, Lin, Zheng, Youdou, Long, Shibing, Liu, Ming

Year:

2006

Language:

english

File:

PDF, 107 KB

english, 2006

146

[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Excellent resistive switching characteristics of Cu doped ZrO2 and its 64 bit cross-point integration

Ming Liu,, Guan, Weihua, Shibing Long,, Qi Liu,, Wei Wang,

Year:

2008

Language:

english

File:

PDF, 3.73 MB

english, 2008

147

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Improved performance of Si-NC memory using a novel two-step program scheme

Yang, Xiaonan, Zhang, Manhong, Wang, Yong, Wang, Qin, Huo, Zongliang, Jiang, Dandan, Long, Shibing, Zhang, Bo, Liu, Ming

Year:

2010

Language:

english

File:

PDF, 360 KB

english, 2010

148

[IEEE 2014 IEEE 6th International Memory Workshop (IMW) - Taipei, Taiwan (2014.5.18-2014.5.21)] 2014 IEEE 6th International Memory Workshop (IMW) - Gate induced resistive switching in 1T1R structure with improved uniformity and better data retention

Liu, Hongtao, Lv, Hangbing, Xu, Xiaoxin, Liu, Ruoyu, Li, Ling, Liu, Qi, Long, Shibing, Wang, Yu, Huo, Zongliang, Liu, Ming

Year:

2014

Language:

english

File:

PDF, 666 KB

english, 2014

149

[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers within Silicon Nanowire Transistor

Chen, Jiezhi, Shi, Yi, Pu, Lin, Zheng, Youdou, Long, Shibing, Liu, Ming

Year:

2006

Language:

english

File:

PDF, 93 KB

english, 2006

150

Dimethyl sulfoxide-based ink for the fabrication of Cu2ZnSn(S,Se)4 thin film

Wang, XianMing, Sun, ShiBing, Zhang, Yong Zheng, Sun, Yuxiu, Liu, JingBing, Wang, Hao

Journal:

Materials Letters

Year:

2015

Language:

english

File:

PDF, 772 KB

english, 2015