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51

Reducing azimuthal domains in epitaxial ferroelectric lanthanum-substituted bismuth titanate films using miscut yttria-stabilized zirconia substrates

S. K. Lee, D. Hesse, U. Gösele, H. N. Lee

Year:

2005

Language:

english

File:

PDF, 521 KB

english, 2005

52

Principles of strain relaxation in heteroepitaxial films growing on compliant substrates

Kästner, G., Gösele, U.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 372 KB

english, 2000

53

Formation of coherent superdots using metal-organic chemical vapor deposition

Ledentsov, N. N., Böhrer, J., Bimberg, D., Kochnev, I. V., Maximov, M. V., Kop’ev, P. S., Alferov, Zh. I., Kosogov, A. O., Ruvimov, S. S., Werner, P., Gösele, U.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 763 KB

english, 1996

54

Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide

Scholz, R. F., Werner, P., Gösele, U., Engler, N., Leipner, H. S.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 513 KB

english, 2000

55

Empirical molecular dynamic study of SiC(0001) surface reconstructions and bonded interfaces

Koitzsch, C., Conrad, D., Scheerschmidt, K., Gösele, U.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 841 KB

english, 2000

56

Growth and characterization of epitaxial ferroelectric lanthanum-substituted bismuth titanate nanostructures with three different orientations

Lee, Sung Kyun, Hesse, Dietrich, Alexe, Marin, Lee, Woo, Nielsch, Kornelius, Gösele, Ulrich

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 1.04 MB

english, 2005

57

Structural transition of Ge dots induced by submonolayer carbon on Ge wetting layer

Wakayama, Yutaka, Gerth, Gerhard, Werner, Peter, Gösele, Ulrich, Sokolov, Leonid V.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 771 KB

english, 2000

58

Structural and electrical anisotropy of (001)-, (116)-, and (103)-oriented epitaxial SrBi[sub 2]Ta[sub 2]O[sub 9] thin films on SrTiO[sub 3] substrates grown by pulsed laser deposition

Lee, Ho Nyung, Visinoiu, Alina, Senz, Stephan, Harnagea, Catalin, Pignolet, Alain, Hesse, Dietrich, Gösele, Ulrich

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 780 KB

english, 2000

59

Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs

Uematsu, Masashi, Werner, Peter, Schultz, Matthias, Tan, Teh Y., Gösele, Ulrich M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 331 KB

english, 1995

60

Ferroelectric-semiconductor heterostructures obtained by direct wafer bonding

Alexe, Marin, Kästner, Gerhard, Hesse, Dietrich, Gösele, Ulrich

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 680 KB

english, 1997

61

Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing

Kosogov, A. O., Werner, P., Gösele, U., Ledentsov, N. N., Bimberg, D., Ustinov, V. M., Egorov, A. Yu., Zhukov, A. E., Kop’ev, P. S., Bert, N. A., Alferov, Zh. I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 516 KB

english, 1996

62

Is there a thermodynamic size limit of nanowires grown by the vapor-liquid-solid process?

Tan, Teh Y., Li, Na, Gösele, Ulrich

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 300 KB

english, 2003

63

Study of Cu gettering to cavities in separation by implantation of oxygen substrates

Zhang, Miao, Lin, Chenglu, Hemment, P. L. F., Gutjahr, K., Gösele, U.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 382 KB

english, 1998

64

Interstitial supersaturation near phosphorus-diffused emitter zones in silicon

Strunk, H., Gösele, U., Kolbesen, B. O.

Journal:

Applied Physics Letters

Year:

1979

Language:

english

File:

PDF, 445 KB

english, 1979

65

Oxide precipitation at silicon grain boundaries

Schroer, E., Hopfe, S., Werner, P., Gösele, U., Duscher, G., Rühle, M., Tan, T. Y.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 494 KB

english, 1997

66

Low-temperature layer splitting of (100) GaAs by He+H coimplantation and direct wafer bonding

Radu, I., Szafraniak, I., Scholz, R., Alexe, M., Gösele, U.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 409 KB

english, 2003

67

Control of Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures grown by metalorganic vapor phase epitaxy

Kurishima, Kenji, Kobayashi, Takashi, Ito, Hiroshi, Gösele, Ulrich

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 377 KB

english, 1996

68

The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon

W. B. Rogers, H. Z. Massoud, R. B. Fair, U. M. Gösele, T. Y. Tan, G. A. Rozgonyi

Year:

1989

Language:

english

File:

PDF, 806 KB

english, 1989

69

Nucleation barrier of voids and dislocation loops in silicon

Tan, T. Y., Plekhanov, P., Gösele, U. M.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 337 KB

english, 1997

70

Diffusion mechanism of zinc and beryllium in gallium arsenide

Yu, S., Tan, T. Y., Gösele, U.

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 2.30 MB

english, 1991

71

Local luminescence of ZnO nanowire-covered surface: A cathodoluminescence microscopy study

Fan, H. J., Scholz, R., Zacharias, M., Gösele, U., Bertram, F., Forster, D., Christen, J.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 937 KB

english, 2005

72

Modeling of nucleation and growth of voids in silicon

Plekhanov, P. S., Gösele, U. M., Tan, T. Y.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 449 KB

english, 1998

73

Hydrophobic silicon wafer bonding

Tong, Q.-Y., Schmidt, E., Gösele, U., Reiche, M.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 687 KB

english, 1994

74

Quantitative high resolution electron microscopy of III-V compounds: A fuzzy logic approach

Hillebrand, R., Hofmeister, H., Werner, P., Gösele, U.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 677 KB

english, 1995

75

Modeling of zinc-indiffusion-induced disordering of GaAs/AlAs superlattices

Zimmermann, H., Gösele, U., Tan, T. Y.

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 1.16 MB

english, 1993

76

Visible range whispering-gallery mode in microdisk array based on size-controlled Si nanocrystals

Zhang, Rong-Jun, Seo, Se-Young, Milenin, Alexey P., Zacharias, Margit, Gösele, Ulrich

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 363 KB

english, 2006

77

Compressive uniaxially strained silicon on insulator by prestrained wafer bonding and layer transfer

Himcinschi, C., Reiche, M., Scholz, R., Christiansen, S. H., Gösele, U.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 536 KB

english, 2007

78

Influence of miscut Y[sub 2]O[sub 3]-stabilized ZrO[sub 2] substrates on the azimuthal domain structure and ferroelectric properties of epitaxial La-substituted Bi[sub 4]Ti[sub 3]O[sub 12] films

Lee, Sung Kyun, Hesse, Dietrich, Gösele, Ulrich, Lee, Ho Nyung

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 1.15 MB

english, 2006

79

Polycrystalline nanopore arrays with hexagonal ordering on aluminum

Li, A. P., Müller, F., Birner, A., Nielsch, K., Gösele, U.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

1999

Language:

english

File:

PDF, 591 KB

english, 1999

80

Transport of thermodynamic information by self-interstitials between precipitates in silicon

Marioton, B. P. R., Gösele, U.

Journal:

Journal of Applied Physics

Year:

1988

Language:

english

File:

PDF, 1.12 MB

english, 1988

81

What determines the lateral bonding speed in silicon wafer bonding?

Gösele, U., Hopfe, S., Li, S., Mack, S., Martini, T., Reiche, M., Schmidt, E., Stenzel, H., Tong, Q.-Y.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 403 KB

english, 1995

82

Quantum dot emitters in two-dimensional photonic crystals of macroporous silicon

Richter, Stefan, Steinhart, Martin, Hofmeister, Herbert, Zacharias, Margit, Gösele, Ulrich, Gaponik, Nikolai, Eychmüller, Alexander, Rogach, Andrey L., Wendorff, Joachim H., Schweizer, Stefan L., vo

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 552 KB

english, 2005

83

Domain structures and piezoelectric properties of Pb(Zr[sub 0.2]Ti[sub 0.8])O[sub 3] nanocapacitors

Han, Hee, Park, Yong Jun, Baik, Sunggi, Lee, Woo, Alexe, Marin, Hesse, Dietrich, Gösele, Ulrich

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 2.04 MB

english, 2010

84

Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon

Huh, J.-Y., Tan, T. Y., Gösele, U.

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 1.39 MB

english, 1995

85

Fabrication of monodomain alumina pore arrays with an interpore distance smaller than the lattice constant of the imprint stamp

Choi, J., Nielsch, K., Reiche, M., Wehrspohn, R. B., Gösele, U.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2003

Language:

english

File:

PDF, 654 KB

english, 2003

86

Polarization imprint and size effects in mesoscopic ferroelectric structures

Alexe, M., Harnagea, C., Hesse, D., Gösele, U.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 466 KB

english, 2001

87

Stability of interfacial oxide layers during silicon wafer bonding

Ahn, K.-Y., Stengl, R., Tan, T. Y., Gösele, U., Smith, P.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 614 KB

english, 1989

88

Diffusion of gold in silicon: A new model

Year:

1981

Language:

english

File:

PDF, 469 KB

english, 1981

89

Reply to “Comment on ‘Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon’ ” [Appl. Phys. Lett. 77, 151 (2000)]

R. Kögler, A. Peeva, W. Anwand, G. Brauer, W. Skorupa, P. Werner, U. Gösele

Year:

2000

Language:

english

File:

PDF, 282 KB

english, 2000

90

Mechanisms of doping-enhanced superlattice disordering and of gallium self-diffusion in GaAs

T. Y. Tan, U. Gösele

Year:

1988

Language:

english

File:

PDF, 641 KB

english, 1988

91

Fundamental issues in wafer bonding

U. Gösele, Y. Bluhm, G. Kästner, P. Kopperschmidt, G. Kräuter, R. Scholz, A. Schumacher, S. Senz, Q. Tong, L. Huang, Y. Chao, T. H. Lee

Year:

1999

Language:

english

File:

PDF, 1.26 MB

english, 1999

92

Strain relaxation in nanopatterned strained silicon round pillars

C. Himcinschi, R. Singh, I. Radu, A. P. Milenin, W. Erfurth, M. Reiche, U. Gösele, S. H. Christiansen, F. Muster, M. Petzold

Year:

2007

Language:

english

File:

PDF, 631 KB

english, 2007

93

Self-interstitial enhanced carbon diffusion in silicon

J. P. Kalejs, L. A. Ladd, U. Gösele

Year:

1984

Language:

english

File:

PDF, 431 KB

english, 1984

94

Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field

V. G. Talalaev, J. W. Tomm, A. S. Sokolov, I. V. Shtrom, B. V. Novikov, A. T. Winzer, R. Goldhahn, G. Gobsch, N. D. Zakharov, P. Werner, U. Gösele, G. E. Cirlin, A. A. Tonkikh, V. M. Ustinov, G. G. T

Year:

2006

Language:

english

File:

PDF, 466 KB

english, 2006

95

Carbon diffusion in silicon

P. Werner, U. Gösele, H. Gossmann, D. C. Jacobson

Year:

1998

Language:

english

File:

PDF, 339 KB

english, 1998

96

Transient carrier transfer in tunnel injection structures

Talalaev, V. G., Tomm, J. W., Zakharov, N. D., Werner, P., Gösele, U., Novikov, B. V., Sokolov, A. S., Samsonenko, Y. B., Egorov, V. A., Cirlin, G. E.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 530 KB

english, 2008

97

Fluorine-enhanced low-temperature wafer bonding of native-oxide covered Si wafers

Tong, Q.-Y., Gan, Q., Fountain, G., Enquist, P., Scholz, R., Gösele, U.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 501 KB

english, 2004

98

90°a−b domains in epitaxial ferroelectric Bi[sub 3.25]La[sub 0.75]Ti[sub 3]O[sub 12] films

Chu, Ming-Wen, Lee, Sung Kyun, Hesse, Dietrich, Gösele, Ulrich

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 506 KB

english, 2004

99

Diffusion of Fe in InP via the kick-out mechanism

Zimmermann, H., Gösele, U., Tan, T. Y.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 587 KB

english, 1993

100

Disordering in 69GaAs/71GaAs isotope superlattice structures

T. Y. Tan, H. M. You, S. Yu, U. M. Gösele, W. Jäger, D. W. Boeringer, F. Zypman, R. Tsu, S. Lee

Year:

1992

Language:

english

File:

PDF, 1.01 MB

english, 1992