57

690V, 1.00 mΩcm2 4H-SiC Double-Trench MOSFETs

Year:
2012
Language:
english
File:
PDF, 404 KB
english, 2012
59

High Current Gain Triple Ion Implanted 4H-SiC BJT

Year:
2009
Language:
english
File:
PDF, 110 KB
english, 2009