Energy Band Structure of SiO2/4H-SiC Interfaces and its...

Materials Science Forum 2011 / 3 Vol. 679-680

Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer

Watanabe, Heiji, Kirino, Takashi, Kagei, Yusuke, Harries, James, Yoshigoe, Akitaka, Teraoka, Yuden, Mitani, Shuhei, Nakano, Yuki, Nakamura, Takashi, Hosoi, Takuji, Shimura, Takayoshi
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Volume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.679-680.386
Date:
March, 2011
File:
PDF, 421 KB
english, 2011
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