Charge-carrier lifetime in Hg1−xCdxTe (x=0.22) structures...

Semiconductors 1997 / 07 Vol. 31; Iss. 7

Charge-carrier lifetime in Hg1−xCdxTe (x=0.22) structures grown by molecular-beam epitaxy

A. V. Voitsekhovskii, Yu. A. Denisov, A. P. Kokhanenko, V. S. Varavin, S. A. Dvoretskii, V. T. Liberman, N. N. Mikhailov, Yu. G. Sidorov
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Volume:
31
Language:
english
Pages:
3
DOI:
10.1134/1.1187058
Date:
July, 1997
File:
PDF, 67 KB
english, 1997
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