Volume 31; Issue 7

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Semiconductors
Volume 31; Issue 7

Semiconductors

Volume 31; Issue 7

1

Calculation of a hierarchical PbS-C superlattice in a multiwell model

E. Ya. Glushko, V. N. Evteev

Journal:

Year:

1997

Language:

english

File:

PDF, 76 KB

english, 1997

2

Viktor Il’ich Fistul’ (On his seventieth birthday)

Journal:

Year:

1997

Language:

english

File:

PDF, 27 KB

english, 1997

3

Effect of impurities with variable valency on the transport phenomena in a quantum well

Journal:

Year:

1997

Language:

english

File:

PDF, 103 KB

english, 1997

4

Charge-carrier lifetime in Hg1−xCdxTe (x=0.22) structures grown by molecular-beam epitaxy

A. V. Voitsekhovskii, Yu. A. Denisov, A. P. Kokhanenko, V. S. Varavin, S. A. Dvoretskii, V. T. Liberman, N. N. Mikhailov, Yu. G. Sidorov

Journal:

Year:

1997

Language:

english

File:

PDF, 67 KB

english, 1997

5

Frenkel’-Poole effect for boron impurity in silicon in strong warming electric fields

A. M. Kozlov, V. V. Ryl’kov

Journal:

Year:

1997

Language:

english

File:

PDF, 70 KB

english, 1997

6

Measurement of the diffusion length of minority charge carriers using real Schottky barriers

N. L. Dmitruk, O. Yu. Borkovskaya, S. V. Mamykin

Journal:

Year:

1997

Language:

english

File:

PDF, 93 KB

english, 1997

7

Effect of successive implantation of Ag+(Cu+) and Xe+ions on the recombination properties of CdxHg1−xTe crystals

M. I. Ibragimova, N. S. Baryshev, V. Yu. Petukhov, I. B. Khaibullin

Journal:

Year:

1997

Language:

english

File:

PDF, 81 KB

english, 1997

8

Characteristic features of Raman scattering of light in silicon doped with high krypton doses

M. F. Galyautdinov, N. V. Kurbatova, S. A. Moiseev, E. I. Shtyrkov

Journal:

Year:

1997

Language:

english

File:

PDF, 66 KB

english, 1997

9

Simulation of heat and mass transfer during growth of silicon carbide single crystals

B. A. Kirillov, A. S. Bakin, Yu. M. Tairov, S. N. Solnyshkin

Journal:

Year:

1997

Language:

english

File:

PDF, 112 KB

english, 1997

10

Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides

V. M. Botnaryuk, A. V. Koval’, A. V. Simashkevich, D. A. Sherban, V. Yu. Rud’, Yu. V. Rud’

Journal:

Year:

1997

Language:

english

File:

PDF, 110 KB

english, 1997

11

Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se2solar cells

T. Walter, V. Yu. Rud’, Yu. V. Rud’, H. W. Schock

Journal:

Year:

1997

Language:

english

File:

PDF, 91 KB

english, 1997

12

High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons

V. N. Brudnyi, V. A. Novikov, V. V. Peshev, N. G. Kolin, A. I. Noifekh

Journal:

Year:

1997

Language:

english

File:

PDF, 98 KB

english, 1997

13

Characteristic structural features of amorphous hydrated silicon films deposited by direct-currect decomposition of silane in a magnetic field

O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, M. M. Kazanin

Journal:

Year:

1997

Language:

english

File:

PDF, 73 KB

english, 1997

14

Effect of laser irradiation on the photoconductivity and noise inn-CdxHg1−xTe single crystals

A. I. Vlasenko, V. A. Gnatyuk, E. P. Kopishinskaya, P. E. Mozol’

Journal:

Year:

1997

Language:

english

File:

PDF, 61 KB

english, 1997

15

Photoelasticity and quadratic permittivity of wide-gap semiconductors

S. Yu. Davydov, S. K. Tikhonov

Journal:

Year:

1997

Language:

english

File:

PDF, 55 KB

english, 1997

16

Role of spatial localization of a particle during tunneling

N. L. Chuprikov

Journal:

Year:

1997

Language:

english

File:

PDF, 88 KB

english, 1997

17

Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum

V. A. Kiselev, S. V. Polisadin, A. V. Postnikov

Journal:

Year:

1997

Language:

english

File:

PDF, 60 KB

english, 1997

18

Electron-hole scattering inp-type silicon with a low charge-carrier injection level

T. T. Mnatsakanov, L. I. Pomortseva, V. B. Shuman

Journal:

Year:

1997

Language:

english

File:

PDF, 65 KB

english, 1997

19

Effect of tin impurity on the photoconductivity kinetics of thin amorphous layers of arsenic selenide

M. S. Iovu, E. P. Kolomeiko, S. D. Shutov

Journal:

Year:

1997

Language:

english

File:

PDF, 101 KB

english, 1997

20

Study of submicron deposits in polycrystalline materials using the internal-friction method

Yu. N. Andreev, N. P. Yaroslavtsev, M. V. Bestaev, D. Ts. Dimitrov, V. A. Moshnikov, Yu. M. Tairov

Journal:

Year:

1997

Language:

english

File:

PDF, 41 KB

english, 1997

21

Mechanism of electroluminescence of porous silicon in electrolytes

D. N. Goryachev, O. M. Sreseli, L. V. Belyakov

Journal:

Year:

1997

Language:

english

File:

PDF, 60 KB

english, 1997

22

Lateral association of vertically coupled quantum dots

A. F. Tsatsul’nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, B. V. Volovik, A. A. Suvorova, N. A. Bert, P. S. Kop’ev

Journal:

Year:

1997

Language:

english

File:

PDF, 215 KB

english, 1997

23

Characteristic features of silicon multijunction solar cells with verticalp-njunctions

E. G. Guk, T. A. Nalet, M. Z. Shvarts, V. B. Shuman

Journal:

Year:

1997

Language:

english

File:

PDF, 56 KB

english, 1997

24

1/fnoise in strongly dopedn-type GaAs under band-band illumination conditions

N. V. D’yakonova, M. E. Levinshtein, S. L. Rumyantsev, F. Pascal

Journal:

Year:

1997

Language:

english

File:

PDF, 107 KB

english, 1997

25

Longitudinal photoeffect in In0.53Ga0.47Asp-njunctions

S. V. Slobodchikov, Kh. M. Salikhov, E. V. Russu

Journal:

Year:

1997

Language:

english

File:

PDF, 70 KB

english, 1997

26

Deep centers and negative temperature coefficient of the breakdown voltage of SiCp-nstructures

A. A. Lebedev, S. Ortoland, C. Raynaud, M. L. Locatelli, D. Planson, J. P. Chante

Journal:

Year:

1997

Language:

english

File:

PDF, 65 KB

english, 1997

27

Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon

E. I. Terukov, A. N. Kuznetsov, E. O. Parshin, G. Weiser, H. Kuehne

Journal:

Year:

1997

Language:

english

File:

PDF, 49 KB

english, 1997

28

Photovoltaic effect in an asymmetric GaAs/AlGaAs nanostructure produced as a result of laser excitation

I. V. Kucherenko, L. K. Vodop’yanov, V. I. Kadushkin

Journal:

Year:

1997

Language:

english

File:

PDF, 52 KB

english, 1997

29

A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface

I. A. Avrutskii, V. G. Litovchenko

Journal:

Year:

1997

Language:

english

File:

PDF, 107 KB

english, 1997

30

Faraday rotation of light in a microcavity

M. A. Kaliteevskii, A. V. Kavokin, P. S. Kop’ev

Journal:

Year:

1997

Language:

english

File:

PDF, 105 KB

english, 1997

31

Effect of radiation on the characteristics of MIS structures containing rare-earth oxides

Ya. G. Fedorenko, L. A. Otavina, E. V. Ledeneva, A. M. Sverdlova

Journal:

Year:

1997

Language:

english

File:

PDF, 88 KB

english, 1997

32

Excitonic effects in the photoconductivity of quantum-well GaxIn1−xAs/InP structures

M. F. Panov, A. N. Pikhtin

Journal:

Year:

1997

Language:

english

File:

PDF, 59 KB

english, 1997

33

Electronic phenomena in chalcogenide glassy semiconductors

Journal:

Year:

1997

Language:

english

File:

PDF, 20 KB

english, 1997

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