Simulation of heat and mass transfer during growth of...

Semiconductors 1997 / 07 Vol. 31; Iss. 7

Simulation of heat and mass transfer during growth of silicon carbide single crystals

B. A. Kirillov, A. S. Bakin, Yu. M. Tairov, S. N. Solnyshkin
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Volume:
31
Language:
english
Pages:
5
DOI:
10.1134/1.1187063
Date:
July, 1997
File:
PDF, 112 KB
english, 1997
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