High-temperature annealing and nuclear-transmutation doping...

Semiconductors 1997 / 07 Vol. 31; Iss. 7

High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons

V. N. Brudnyi, V. A. Novikov, V. V. Peshev, N. G. Kolin, A. I. Noifekh
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Volume:
31
Language:
english
Pages:
5
DOI:
10.1134/1.1187066
Date:
July, 1997
File:
PDF, 98 KB
english, 1997
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