1/fnoise in strongly dopedn-type GaAs under band-band...

Semiconductors 1997 / 07 Vol. 31; Iss. 7

1/fnoise in strongly dopedn-type GaAs under band-band illumination conditions

N. V. D’yakonova, M. E. Levinshtein, S. L. Rumyantsev, F. Pascal
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Volume:
31
Language:
english
Pages:
5
DOI:
10.1134/1.1187078
Date:
July, 1997
File:
PDF, 107 KB
english, 1997
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