Deep centers and negative temperature coefficient of the...

Semiconductors 1997 / 07 Vol. 31; Iss. 7

Deep centers and negative temperature coefficient of the breakdown voltage of SiCp-nstructures

A. A. Lebedev, S. Ortoland, C. Raynaud, M. L. Locatelli, D. Planson, J. P. Chante
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Volume:
31
Language:
english
Pages:
3
DOI:
10.1134/1.1187080
Date:
July, 1997
File:
PDF, 65 KB
english, 1997
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