Fabrication of blocked impurity-band structures on...

Semiconductors 1997 / 03 Vol. 31; Iss. 3

Fabrication of blocked impurity-band structures on gallium-doped silicon by plasma hydrogenation

V. M. Émeksuzyan, G. N. Kamaev, G. N. Feofanov, V. V. Bolotov
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Volume:
31
Language:
english
Pages:
6
DOI:
10.1134/1.1187121
Date:
March, 1997
File:
PDF, 118 KB
english, 1997
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