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Volume 31; Issue 3
Main
Semiconductors
Volume 31; Issue 3
Semiconductors
Volume 31; Issue 3
1
Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates
A. N. Andreev
,
N. Yu. Smirnova
,
A. S. Tregubova
,
M. P. Shcheglov
,
V. E. Chelnokov
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 7.58 MB
Your tags:
english, 1997
2
Modeling the hydrogen distribution accompanying electron injection in SiO2films in strong electric fields
G. V. Gadiyak
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 139 KB
Your tags:
english, 1997
3
Effect of electron irradiation on the electrical properties ofn-type Pb1−xSnxTe (x⋍2) alloys
E. P. Skipetrov
,
A. N. Nekrasova
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 81 KB
Your tags:
english, 1997
4
Transport phenomena inn-MnxHg1−xTe/Cd0.96Zn0.04Te epitaxial films
G. V. Beketov
,
A. E. Belyaev
,
S. A. Vitusevich
,
S. V. Kavertsev
,
S. M. Komirenko
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 76 KB
Your tags:
english, 1997
5
Scaling in the regime of the quantum Hall effect and hole localization inp-Ge/Ge1−xSixheterostructures
Yu. G. Arapov
,
N. A. Gorodilov
,
V. N. Neverov
,
G. I. Kharus
,
N. G. Shelushinina
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 154 KB
Your tags:
english, 1997
6
Defects in intrinsic and pseudodoped amorphous hydrated silicon
O. A. Golikova
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 81 KB
Your tags:
english, 1997
7
Quasi-static capacitance of a MOS-FET upon saturation of the carrier drift velocity
M. V. Cheremisin
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 196 KB
Your tags:
english, 1997
8
Binding energy of shallow donors in asymmetrical systems of quantum wells
V. I. Belyavskii
,
M. V. Gol’dfarb
,
S. V. Shevtsov
,
Yu. V. Kopaev
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 117 KB
Your tags:
english, 1997
9
Nonlinear conductivity and current-voltage characteristics of two-dimensional semiconductor superlattices
Yu. A. Romanov
,
E. V. Demidov
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 103 KB
Your tags:
english, 1997
10
Fabrication of blocked impurity-band structures on gallium-doped silicon by plasma hydrogenation
V. M. Émeksuzyan
,
G. N. Kamaev
,
G. N. Feofanov
,
V. V. Bolotov
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 118 KB
Your tags:
english, 1997
11
Shubnikov-de Haas oscillations in HgSe〈Fe〉 and HgSe〈Co〉 under hydrostatic pressure
É. A. Neifel’d
,
K. M. Demchuk
,
G. I. Kharus
,
A. É. Bubnova
,
L. I. Domanskaya
,
G. D. Shtrapenin
,
S. Yu. Paranchich
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 100 KB
Your tags:
english, 1997
12
Thermoelectric figure of merit of monopolar semiconductors with finite dimensions
V. S. Zakordonets
,
G. N. Logvinov
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 62 KB
Your tags:
english, 1997
13
Galvanomagnetic phenomena inp-Hg1−xMnxTe solid solutions
R. I. Bashirov
,
R. R. Bashirov
,
V. A. Elizarov
,
A. Yu. Mollaev
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 80 KB
Your tags:
english, 1997
14
Lattice vibrations in CuInSe2crystals
N. N. Syrbu
,
M. Bogdanash
,
V. E. Tezlevan
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 119 KB
Your tags:
english, 1997
15
Anomalies in the low-temperature thermoelectric power ofp-Bi2Te3and Te associated with topological electronic transitions under pressure
E. S. Itskevich
,
L. M. Kashirskaya
,
V. F. Kraidenov
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 72 KB
Your tags:
english, 1997
16
Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation
A. M. Myasnikov
,
V. I. Obodnikov
,
V. G. Seryapin
,
E. G. Tishkovskii
,
B. I. Fomin
,
E. I. Cherepov
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 59 KB
Your tags:
english, 1997
17
Influence of elastic stresses on the character of epitaxial crystallization of (Hg, Mn)Te
S. V. Kavertsev
,
A. E. Belyaev
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 56 KB
Your tags:
english, 1997
18
Effect of illumination time on the annealing of optically created metastable defects inp-typea-Si:H
A. G. Kazanskii
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 56 KB
Your tags:
english, 1997
19
Recombination mechanisms in dopedn-type Hg1−xCdxTe crystals and properties of diffusionp+-njunctions based on them
V. V. Teterkin
,
S. Ya. Stochanskii
,
F. F. Sizov
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 88 KB
Your tags:
english, 1997
20
Influence of the X-valley on the tunneling and lifetime of electrons in GaAs/AlAs heterostructures
E. V. Demidov
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 82 KB
Your tags:
english, 1997
21
Auger recombination in strained quantum wells
A. D. Andreev
,
G. G. Zegrya
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 142 KB
Your tags:
english, 1997
22
Luminescence of porous silicon in the infrared spectral region at room temperature
G. Polisskii
,
F. Koch
,
O. M. Sreseli
,
A. V. Andrianov
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 73 KB
Your tags:
english, 1997
23
Negative differential resistivity of a nonideal Schottky barrier based on indium arsenide
A. V. Kalameitsev
,
D. A. Romanov
,
A. P. Kovchavtsev
,
G. L. Kuryshev
,
K. O. Postnikov
,
I. M. Subbotin
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 138 KB
Your tags:
english, 1997
24
Luminescence of copper-aluminum diselenide
V. A. Savchuk
,
B. V. Korzun
,
N. A. Sobolev
,
L. A. Makovetskaya
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 68 KB
Your tags:
english, 1997
25
The electrical activity of isoelectronic germanium impurities in lead chalcogenides
V. F. Masterov
,
F. S. Nasredinov
,
S. A. Nemov
,
P. P. Seregin
,
A. V. Ermolaev
,
S. M. Irkaev
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 46 KB
Your tags:
english, 1997
26
Structure and electrical conductivity of polycrystalline silicon films grown by molecularbeam deposition accompanied by low-energy ion bombardment of the growth surface
D. A. Pavlov
,
A. F. Khokhlov
,
D. V. Shungurov
,
V. G. Shengurov
Journal:
Semiconductors
Year:
1997
Language:
english
File:
PDF, 290 KB
Your tags:
english, 1997
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