Influence of thermal annealing on the intensity of the...

Semiconductors 1999 / 01 Vol. 33; Iss. 1

Influence of thermal annealing on the intensity of the 1.54-µm photoluminescence band in erbium-doped amorphous hydrogenated silicon

A. A. Andreev, V. B. Voronkov, V. G. Golubev, A. V. Medvedev, A. B. Pevtsov
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Volume:
33
Language:
english
Pages:
4
DOI:
10.1134/1.1187654
Date:
January, 1999
File:
PDF, 74 KB
english, 1999
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