Volume 33; Issue 1

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Semiconductors
Volume 33; Issue 1

Semiconductors

Volume 33; Issue 1

1

Conductivity of thin nanocrystalline silicon films

V. G. Golubev, L. E. Morozova, A. B. Pevtsov, N. A. Feoktistov

Journal:

Year:

1999

Language:

english

File:

PDF, 56 KB

english, 1999

2

Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0–1.6 µm

V. Yu. Davydov, V. V. Lundin, A. N. Smirnov, N. A. Sobolev, A. S. Usikov, A. M. Emel’yanov, M. I. Makoviichuk, E. O. Parshin

Journal:

Year:

1999

Language:

english

File:

PDF, 89 KB

english, 1999

3

Thermally stimulated currents and instabilities of the photoresponse in PbTe(In) alloys at low temperatures

B. A. Akimov, V. A. Bogoyavlenskii, L. I. Ryabova, V. N. Vasil’kov, E. I. Slyn’ko

Journal:

Year:

1999

Language:

english

File:

PDF, 73 KB

english, 1999

4

Influence of the energy transport of electrons by optical phonon emission on the superluminescence and reversible bleaching of a thin GaAs layer excited by a strong picosecond light pulse

I. L. Bronevoi, A. N. Krivonosov

Journal:

Year:

1999

Language:

english

File:

PDF, 96 KB

english, 1999

5

Fano effect in the magnetoabsorption spectra of gallium arsenide

D. V. Vasilenko, N. V. Luk’yanova, R. P. Seisyan

Journal:

Year:

1999

Language:

english

File:

PDF, 91 KB

english, 1999

6

Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

M. K. Bakhadyrkhanov, U. Kh. Kurbanova, N. F. Zikrillaev

Journal:

Year:

1999

Language:

english

File:

PDF, 52 KB

english, 1999

7

Self-compensation in PbSe:Tl thin films

V. A. Zykov, T. A. Gavrikova, S. A. Nemov, P. A. Osipov

Journal:

Year:

1999

Language:

english

File:

PDF, 64 KB

english, 1999

8

Electronic structure of C60films

V. V. Sobolev, E. L. Busypina

Journal:

Year:

1999

Language:

english

File:

PDF, 99 KB

english, 1999

9

Optical absorption in PbGa2Se4single crystals

B. G. Tagiev, N. N. Musaeva, R. B. Dzhabbarov

Journal:

Year:

1999

Language:

english

File:

PDF, 70 KB

english, 1999

10

Characteristic features of the temperature dependence of the photoluminescence polarization of {Ga vacancy}-SnGa(SiGa) complexes in GaAs produced as a result of resonant polarized excitation

A. A. Gutkin, M. A. Reshchikov, V. E. Sedov

Journal:

Year:

1999

Language:

english

File:

PDF, 84 KB

english, 1999

11

Photoconductivity spectra of CdHgTe crystals with photoactive inclusions

A. I. Vlasenko, Z. K. Vlasenko, A. V. Lyubchenko

Journal:

Year:

1999

Language:

english

File:

PDF, 91 KB

english, 1999

12

Theory of photovoltaic effects in crystals without an inversion center

R. Ya. Rasulov, Yu. E. Salenko, A. Tukhtamatov, T. Éski, A. É. Avliyaev

Journal:

Year:

1999

Language:

english

File:

PDF, 140 KB

english, 1999

13

Ultrashallowp+-njunctions in Si(111): Electron-beam diagnostics of the surface region

N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, A. A. Andronov, S. V. Robozerov

Journal:

Year:

1999

Language:

english

File:

PDF, 124 KB

english, 1999

14

Charging of deep-level centers and negative persistent photoconductivity in modulationdoped AlGaAs/GaAs heterostructures

V. I. Borisov, V. A. Sablikov, I. V. Borisova, A. I. Chmil’

Journal:

Year:

1999

Language:

english

File:

PDF, 103 KB

english, 1999

15

Vertical screening in doped, intentionally disordered semiconductor superlattices

I. P. Zvyagin, M. A. Ormont

Journal:

Year:

1999

Language:

english

File:

PDF, 88 KB

english, 1999

16

Optical intersubband transitions in strained quantum wells utilizing In1−xGaxAs/InP solid solutions

S. A. Stoklitskii, V. N. Murzin, Yu. A. Mityagin, B. Monemar, P. O. Holtz

Journal:

Year:

1999

Language:

english

File:

PDF, 214 KB

english, 1999

17

Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix

Zhao Zhen, D. A. Bedarev, B. V. Volovik, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, A. F. Tsatsul’nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, P. S. Kop’ev

Journal:

Year:

1999

Language:

english

File:

PDF, 87 KB

english, 1999

18

Nonradiative recombination at shallow bound states in quantum-confined systems in an electric field

É. P. Sinyavskii, A. M. Rusanov

Journal:

Year:

1999

Language:

english

File:

PDF, 111 KB

english, 1999

19

Radiative tunneling recombination and luminescence of trapezoidalδ-doped superlattices

V. V. Osipov, A. Yu. Selyakov, M. Foygel

Journal:

Year:

1999

Language:

english

File:

PDF, 103 KB

english, 1999

20

Influence of thermal annealing on the intensity of the 1.54-µm photoluminescence band in erbium-doped amorphous hydrogenated silicon

A. A. Andreev, V. B. Voronkov, V. G. Golubev, A. V. Medvedev, A. B. Pevtsov

Journal:

Year:

1999

Language:

english

File:

PDF, 74 KB

english, 1999

21

Amorphous hydrogenated silicon films exhibiting enhanced photosensitivity

O. A. Golikova, M. M. Kazanin

Journal:

Year:

1999

Language:

english

File:

PDF, 74 KB

english, 1999

22

Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon

O. V. Aleksandrov, Yu. A. Nikolaev, N. A. Sobolev

Journal:

Year:

1999

Language:

english

File:

PDF, 94 KB

english, 1999

23

Quasi-gapless semiconductor:p-type indium arsenide

M. I. Daunov, I. K. Kamilov, A. B. Magomedov, A. Sh. Kirakosyan

Journal:

Year:

1999

Language:

english

File:

PDF, 78 KB

english, 1999

24

Investigating the photosensitivity spectra of n-type GaAs-As2Se3heterojunctions

I. P. Arzhanukhina, K. P. Kornev, U. V. Seleznev

Journal:

Year:

1999

Language:

english

File:

PDF, 64 KB

english, 1999

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