Emission associated with extended defects in epitaxial...

Semiconductors 2000 / 01 Vol. 34; Iss. 1

Emission associated with extended defects in epitaxial ZnTe/GaAs layers and multilayer structures

E. F. Venger, Yu. G. Sadof’ev, G. N. Semenova, N. E. Korsunskaya, V. P. Klad’ko, M. P. Semtsiv, L. V. Borkovskaya
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Volume:
34
Language:
english
Pages:
6
DOI:
10.1134/1.1187943
Date:
January, 2000
File:
PDF, 82 KB
english, 2000
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