Volume 34; Issue 1

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Semiconductors
Volume 34; Issue 1

Semiconductors

Volume 34; Issue 1

1

Holmium redistribution upon solid-phase epitaxial crystallization of amorphized silicon layers

O. V. Aleksandrov, Yu. A. Nikolaev, N. A. Sobolev

Journal:

Year:

2000

Language:

english

File:

PDF, 64 KB

english, 2000

2

Elastic strain and composition of self-assembled GeSi nanoislands on Si(001)

N. V. Vostokov, S. A. Gusev, I. V. Dolgov, Yu. N. Drozdov, Z. F. Krasil’nik, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov, D. O. Filatov

Journal:

Year:

2000

Language:

english

File:

PDF, 194 KB

english, 2000

3

Emission associated with extended defects in epitaxial ZnTe/GaAs layers and multilayer structures

E. F. Venger, Yu. G. Sadof’ev, G. N. Semenova, N. E. Korsunskaya, V. P. Klad’ko, M. P. Semtsiv, L. V. Borkovskaya

Journal:

Year:

2000

Language:

english

File:

PDF, 82 KB

english, 2000

4

Formation of photoluminescence centers during annealing of SiO2layers implanted with Ge ions

G. A. Kachurin, L. Rebohle, I. E. Tyschenko, V. A. Volodin, M. Voelskow, W. Skorupa, H. Froeb

Journal:

Year:

2000

Language:

english

File:

PDF, 90 KB

english, 2000

5

Special features of electrical activation of28Si in single-crystal and epitaxial GaAs subjected to rapid thermal annealing

V. M. Ardyshev, M. V. Ardyshev, S. S. Khludkov

Journal:

Year:

2000

Language:

english

File:

PDF, 63 KB

english, 2000

6

Ellipsometric study of ultrathin AlxGa1−xAs layers

M. V. Sukhorukova, I. A. Skorokhodova, V. P. Khvostikov

Journal:

Year:

2000

Language:

english

File:

PDF, 82 KB

english, 2000

7

Transverse optical phonon splitting in GaAs/AlAs superlattices grown on the GaAs(311) surface studied by the method of Raman light scattering

V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii’, B. R. Semyagin, V. V. Bolotov, V. A. Sachkov

Journal:

Year:

2000

Language:

english

File:

PDF, 87 KB

english, 2000

8

Effect of the insulator-gallium arsenide boundary on the behavior of silicon in the course of radiation annealing

V. M. Ardyshev, M. V. Ardyshev, S. S. Khludkov

Journal:

Year:

2000

Language:

english

File:

PDF, 48 KB

english, 2000

9

Temperature dependence of residual stress in epitaxial GaAs/Si(100) films determined from photoreflectance spectroscopy data

R. V. Kuz’menko, A. V. Ganzha, O. V. Bochurova, É. P. Domashevskaya, J. Schreiber, S. Hildebrandt, S. Mo, E. Peiner, A. Schlachetzki

Journal:

Year:

2000

Language:

english

File:

PDF, 94 KB

english, 2000

10

Energy distribution of localized states in amorphous hydrogenated silicon

K. V. Kougiya, E. I. Terukov, I. N. Trapeznikova

Journal:

Year:

2000

Language:

english

File:

PDF, 79 KB

english, 2000

11

Modifications of the structure and electrical parameters of the films of amorphous hydrogenated silicon implanted with Si+ions

O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, I. N. Petrov, É. P. Domashevskaya, V. A. Terekhov

Journal:

Year:

2000

Language:

english

File:

PDF, 68 KB

english, 2000

12

The influence of local surroundings of Er atoms on the kinetics of decay of Er photoluminescence in amorphous hydrogenated silicon

E. I. Terukov, V. Kh. Kudoyarova, O. I. Kon’kov, E. A. Konstantinova, B. V. Kamenev, V. Yu. Timoshenko

Journal:

Year:

2000

Language:

english

File:

PDF, 48 KB

english, 2000

13

Current transport in the Me-n-n+Schottky-barrier structures

N. A. Torkhov, S. V. Eremeev

Journal:

Year:

2000

Language:

english

File:

PDF, 100 KB

english, 2000

14

A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate

S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, V. M. Ustinov, Yu. M. Shernyakov, I. N. Kayander, E. Yu. Kondrat’eva, D. A. Livshits, I. S. Tarasov, M. V. Maksimov, A. F. Tsatsul’nikov, N. N.

Journal:

Year:

2000

Language:

english

File:

PDF, 55 KB

english, 2000

15

Evolution of photoluminescence spectra of stoichiometric CdTe: Dependence on the purity of starting components

A. V. Kvit, Yu. V. Klevkov, S. A. Medvedev, V. S. Bagaev, A. V. Perestoronin, A. F. Plotnikov

Journal:

Year:

2000

Language:

english

File:

PDF, 58 KB

english, 2000

16

Electrophysical properties of Hg1−xCdxTe crystals under hydrostatic pressure

I. V. Virt, V. D. Prozorovskii, D. I. Tsyutsyura

Journal:

Year:

2000

Language:

english

File:

PDF, 49 KB

english, 2000

17

Band structure and spatial charge distribution in AlxGa1−xN

V. G. Deibuk, A. V. Voznyi, M. M. Sletov

Journal:

Year:

2000

Language:

english

File:

PDF, 178 KB

english, 2000

18

Field dependence of the rate of thermal emission of holes from theVGaSAscomplex in gallium arsenide

S. V. Bulyarskii, N. S. Grushko, A. V. Zhukov

Journal:

Year:

2000

Language:

english

File:

PDF, 74 KB

english, 2000

19

Electron spin resonance in the vicinity of metal-insulator transition in compensatedn-Ge:As

A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek

Journal:

Year:

2000

Language:

english

File:

PDF, 147 KB

english, 2000

20

Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure

O. O. Mamatkarimov, S. Z. Zainabidinov, A. Abduraimov, R. Kh. Khamidov, U. A. Tuichiev

Journal:

Year:

2000

Language:

english

File:

PDF, 49 KB

english, 2000

21

Crystal-glass phase transition induced by pulses of electric field in chalcogenide semiconductors

É. A. Lebedev, K. D. Tséndin, L. P. Kazakova

Journal:

Year:

2000

Language:

english

File:

PDF, 40 KB

english, 2000

22

Growth ofa-C:H anda-C:H〈Cu〉 films produced by magnetron sputtering

T. K. Zvonareva, V. I. Ivanov-Omskii, A. V. Nashchekin, L. V. Sharonova

Journal:

Year:

2000

Language:

english

File:

PDF, 330 KB

english, 2000

23

Light emitting diodes for the spectral range of λ=3.3–4.3 μm fabricated from the InGaAs-and InAsSbP-based solid solutions: Electroluminescence in the temperature range of 20–180°C

M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Journal:

Year:

2000

Language:

english

File:

PDF, 74 KB

english, 2000

24

Capacitance measurements for diodes in the case of strong dependence of the diode-base series resistance on the applied voltage

A. A. Lebedev, A. A. Lebedev, D. V. Davydov

Journal:

Year:

2000

Language:

english

File:

PDF, 66 KB

english, 2000

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