The dislocation nature of a tunneling excess current in...

Semiconductors 2000 / 08 Vol. 34; Iss. 8

The dislocation nature of a tunneling excess current in GaAs-Ni structures modified by laser radiation

K. K. Dzhamanbalin, A. G. Dmitriev
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Volume:
34
Language:
english
Pages:
2
DOI:
10.1134/1.1188104
Date:
August, 2000
File:
PDF, 29 KB
english, 2000
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