Volume 34; Issue 8

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Semiconductors
Volume 34; Issue 8

Semiconductors

Volume 34; Issue 8

1

Radiation defects inn-6H-SiC irradiated with 8 MeV protons

A. A. Lebedev, A. I. Veinger, D. V. Davydov, V. V. Kozlovskii, N. S. Savkina, A. M. Strel’chuk

Journal:

Year:

2000

Language:

english

File:

PDF, 85 KB

english, 2000

2

TEM structural studies of undoped and Si-doped GaN grown on Al2O3substrate

N. A. Cherkashin, N. A. Bert, Yu. G. Musikhin, S. V. Novikov, T. S. Cheng, C. T. Foxon

Journal:

Year:

2000

Language:

english

File:

PDF, 441 KB

english, 2000

3

Properties of precisely compensated semiconductors

S. Zh. Karazhanov

Journal:

Year:

2000

Language:

english

File:

PDF, 132 KB

english, 2000

4

Electrical properties of semiconductors with pair defects

S. Zh. Karazhanov, É. V. Kanaki

Journal:

Year:

2000

Language:

english

File:

PDF, 121 KB

english, 2000

5

Transition of a noncavity bistable exciton system driven by correlated external noise to a strongly absorbing state

Journal:

Year:

2000

Language:

english

File:

PDF, 38 KB

english, 2000

6

Variable-range-hopping conduction via indium impurity states in Pb0.78Sn0.22Te solid solution

S. A. Nemov, V. É. Gasumyants, V. I. Proshin, Yu. V. Ravich, D. A. Potapova

Journal:

Year:

2000

Language:

english

File:

PDF, 43 KB

english, 2000

7

Spectral shift of photoluminescence bands of the (SiC)1−x(AlN)xepitaxial films due to laser annealing

G. K. Safaraliev, Yu. N. Émirov, M. K. Kurbanov, B. A. Bilalov

Journal:

Year:

2000

Language:

english

File:

PDF, 147 KB

english, 2000

8

Gallium-induced deep level in Pb1−xGexTe alloys

E. P. Skipetrov, E. A. Zvereva, V. V. Belousov, L. A. Skipetrova, E. I. Slyn’ko

Journal:

Year:

2000

Language:

english

File:

PDF, 49 KB

english, 2000

9

Hole concentration and thermoelectric figure of merit for Pb1−xSnxTe:Te solid solutions

G. T. Alekseeva, M. V. Vedernikov, E. A. Gurieva, L. V. Prokof’eva, Yu. I. Ravich

Journal:

Year:

2000

Language:

english

File:

PDF, 70 KB

english, 2000

10

Fine structure of the dielectric-function spectrum in diamond

V. V. Sobolev, A. P. Timonov, V. Val. Sobolev

Journal:

Year:

2000

Language:

english

File:

PDF, 93 KB

english, 2000

11

Mutual electron-phonon drag and low-temperature anomalies of thermoelectric and thermomagnetic effects in HgSe:Fe crystals

I. G. Kuleev, I. Yu. Arapova

Journal:

Year:

2000

Language:

english

File:

PDF, 105 KB

english, 2000

12

Ionization energy of copper in Hg0.8Cd0.2Te crystals under conditions of light and intermediate doping

V. V. Bogoboyashchii

Journal:

Year:

2000

Language:

english

File:

PDF, 117 KB

english, 2000

13

Nonlinear optical absorption in a heavily doped degeneraten-GaAs

V. L. Malevich, I. A. Utkin

Journal:

Year:

2000

Language:

english

File:

PDF, 46 KB

english, 2000

14

Tunnel light-emitting Si:(Er,O) diodes with a short rise time of Er3+electroluminescence under breakdown conditions

A. M. Emel’yanov, N. A. Sobolev, M. A. Trishenkov, P. E. Khakuashev

Journal:

Year:

2000

Language:

english

File:

PDF, 73 KB

english, 2000

15

Distribution of mobile ions in thin insulator films at the insulator-semiconductor interface

S. G. Dmitriev, Yu. V. Markin

Journal:

Year:

2000

Language:

english

File:

PDF, 84 KB

english, 2000

16

The dislocation nature of a tunneling excess current in GaAs-Ni structures modified by laser radiation

K. K. Dzhamanbalin, A. G. Dmitriev

Journal:

Year:

2000

Language:

english

File:

PDF, 29 KB

english, 2000

17

Thermodynamic and kinetic aspects of reconstruction transitions at the GaAs(001) surface

Yu. G. Galitsyn, V. G. Mansurov, S. P. Moshchenko, A. I. Toropov

Journal:

Year:

2000

Language:

english

File:

PDF, 81 KB

english, 2000

18

Electron-ion exchange at the insulator-semiconductor interfaces and its influence on ion transport in the insulating layer

E. I. Gol’dman

Journal:

Year:

2000

Language:

english

File:

PDF, 126 KB

english, 2000

19

Properties of diode heterostructures based on nanocrystallinen-SnO2onp-Si under the conditions of gas Adsorption

R. B. Vasil’ev, A. M. Gas’kov, M. N. Rumyantseva, A. S. Ryzhikov, L. I. Ryabova, B. A. Akimov

Journal:

Year:

2000

Language:

english

File:

PDF, 79 KB

english, 2000

20

Band offsets in Zn1−xCdxTe/ZnTe single-quantum-well structures grown by molecular-beam epitaxy on GaAs(001) substrates

V. I. Kozlovskii, V. G. Litvinov, Yu. G. Sadof’ev

Journal:

Year:

2000

Language:

english

File:

PDF, 73 KB

english, 2000

21

The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2layers

G. A. Kachurin, S. G. Yanovskaya, M. -O. Ruault, A. K. Gutakovskii, K. S. Zhuravlev, O. Kaitasov, H. Bernas

Journal:

Year:

2000

Language:

english

File:

PDF, 398 KB

english, 2000

22

High-frequency properties of avalanche multiplication of photocarriers in structures with negative feedback

T. M. Burbaev, V. A. Kurbatov, N. E. Kurochkin, V. A. Kholodnov

Journal:

Year:

2000

Language:

english

File:

PDF, 54 KB

english, 2000

23

Parameters of metal one-electron transistors based on various materials

I. I. Abramov, E. G. Novik

Journal:

Year:

2000

Language:

english

File:

PDF, 73 KB

english, 2000

24

Izmail Arturovich Abroyan

Journal:

Year:

2000

Language:

english

File:

PDF, 80 KB

english, 2000

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