Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based...

Semiconductors 2000 / 12 Vol. 34; Iss. 12

Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy

N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. B. Popova, Yu. P. Yakovlev
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Volume:
34
Language:
english
Pages:
4
DOI:
10.1134/1.1331799
Date:
December, 2000
File:
PDF, 60 KB
english, 2000
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