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Volume 34; Issue 12
Main
Semiconductors
Volume 34; Issue 12
Semiconductors
Volume 34; Issue 12
1
The scanning tunneling microscopy and scanning tunneling spectroscopy of amorphous carbon
V. I. Ivanov-Omskii
,
A. B. Lodygin
,
S. G. Yastrebov
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 385 KB
Your tags:
english, 2000
2
Influence of Sn resonance states on the electrical homogeneity of Bi2Te3single crystals
M. K. Zhitinskaya
,
S. A. Nemov
,
T. E. Svechnikova
,
P. Reinshaus
,
E. Müller
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 41 KB
Your tags:
english, 2000
3
The In/PbTe barrier structures with a thin intermediate insulating layer
O. A. Aleksandrova
,
A. T. Akhmedzhanov
,
R. Ts. Bondokov
,
V. A. Moshnikov
,
I. V. Saunin
,
Yu. M. Tairov
,
V. I. Shtanov
,
L. V. Yashina
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 70 KB
Your tags:
english, 2000
4
The formation kinetics of a strongly absorbing state in a bistable excitonic noncavity system
Yu. V. Gudyma
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 66 KB
Your tags:
english, 2000
5
Photoluminescence of Ga1−xInxAsySb1−ysolid solutions lattice-matched to InAs
K. D. Moiseev
,
A. A. Toropov
,
Ya. V. Terent’ev
,
M. P. Mikhailova
,
Yu. P. Yakovlev
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 98 KB
Your tags:
english, 2000
6
Type II broken-gap InAs/GaIn0.17As0.22Sb heterostructures with abrupt planar interface
K. D. Moiseev
,
A. A. Sitnikova
,
N. N. Faleev
,
Yu. P. Yakovlev
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 149 KB
Your tags:
english, 2000
7
Special features of alpha-particle detection with thin semi-insulating 6H-SiC films
N. B. Strokan
,
A. A. Lebedev
,
A. M. Ivanov
,
D. V. Davydov
,
V. V. Kozlovskii
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 82 KB
Your tags:
english, 2000
8
Vibration modes of carbon in hydrogenated amorphous carbon modified with copper
V. I. Ivanov-Omskii
,
T. K. Zvonareva
,
G. S. Frolova
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 99 KB
Your tags:
english, 2000
9
On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers
A. Yu. Leshko
,
A. V. Lyutetskii
,
N. A. Pikhtin
,
G. V. Skrynnikov
,
Z. N. Sokolova
,
I. S. Tarasov
,
N. V. Fetisova
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 66 KB
Your tags:
english, 2000
10
Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy
N. V. Zotova
,
S. S. Kizhaev
,
S. S. Molchanov
,
T. B. Popova
,
Yu. P. Yakovlev
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 60 KB
Your tags:
english, 2000
11
Emission-line broadening of current tunable InAsSbP/InAsSb/InAsSbP heterostructure lasers
A. N. Imenkov
,
N. M. Kolchanova
,
P. Kubat
,
S. Civish
,
Yu. P. Yakovlev
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 60 KB
Your tags:
english, 2000
12
Serge(overset{lower0.5emhbox{(smash{scriptscriptstylesmile})}}{l})Petrovich Solov’ev (1932–2000)
V. N. Brudnyi
,
V. T. Bublik
,
B. N. Goshitskii
,
V. V. Emtsev
,
Yu. A. Kazanskii
,
R. F. Konopleva
,
Yu. V. Konobeev
,
N. G. Kolin
,
I. I. Kuz’min
,
M. G. Mil’vidskii
,
R. P. Ozerov
,
V. B. Osvenskii
,
V. G. Plo
Journal:
Semiconductors
Year:
2000
Language:
english
File:
PDF, 53 KB
Your tags:
english, 2000
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