The effect of high-temperature epitaxial SiC layer growth...

Semiconductors 2001 / 02 Vol. 35; Iss. 2

The effect of high-temperature epitaxial SiC layer growth on the structure of porous silicon carbide

N. S. Savkina, V. V. Ratnikov, V. B. Shuman
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Volume:
35
Language:
english
Pages:
5
DOI:
10.1134/1.1349922
Date:
February, 2001
File:
PDF, 205 KB
english, 2001
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