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Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte
O. Yu. Shevchenko, V. F. Radantsev, A. M. Yafyasov, V. B. Bozhevol’nov, I. M. Ivankiv, A. D. PerepelkinVolume:
36
Language:
english
Pages:
4
DOI:
10.1134/1.1469185
Date:
April, 2002
File:
PDF, 51 KB
english, 2002